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TPS2100

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使能端低电平有效、具有补偿温度功能的 2.7V 至 4V、250mΩ、0.5A、1.3Ω、0.01A 电源多路复用器

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TPS2100

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产品详情

Number of input channels 2 IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 4 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.01 Rating Catalog Quiescent current (Iq) (µA) 0.75 Operating temperature range (°C) -40 to 85 FET Internal Imax (A) 0.5 Features Inrush current control, Reverse current blocking Device type Power muxes Function Inrush current control, Reverse current blocking
Number of input channels 2 IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 4 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.01 Rating Catalog Quiescent current (Iq) (µA) 0.75 Operating temperature range (°C) -40 to 85 FET Internal Imax (A) 0.5 Features Inrush current control, Reverse current blocking Device type Power muxes Function Inrush current control, Reverse current blocking
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)
  • IN1...250-m, 500-mA N-Channel;
    16-uA Max Supply Current
  • IN2...1.3-, 10-mA P-Channel;
    1.5-uA Max Supply Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS- and TTL-Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7-V to 4 V Operating Range
  • SOT-23-5 and SOIC-8 Package
  • -40°C to 70°C Ambient Temperature Range
  • 2-kV Human-Body-Model, 750-V CDM, 200-V Machine-Model Electrostatic-
    Discharge Protection
  • Typical Applications
    • Notebook and Desktop PCs
    • Palmtops and PDAs
  • Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)
  • IN1...250-m, 500-mA N-Channel;
    16-uA Max Supply Current
  • IN2...1.3-, 10-mA P-Channel;
    1.5-uA Max Supply Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS- and TTL-Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7-V to 4 V Operating Range
  • SOT-23-5 and SOIC-8 Package
  • -40°C to 70°C Ambient Temperature Range
  • 2-kV Human-Body-Model, 750-V CDM, 200-V Machine-Model Electrostatic-
    Discharge Protection
  • Typical Applications
    • Notebook and Desktop PCs
    • Palmtops and PDAs

The TPS2100 and TPS2101 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 m) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75uA to decrease the demand on the standby power supply. The MOSFETs in the TPS2100 and TPS2101 do not have the parasitic diodes, found in discrete MOSFETs, which allow the devices to prevent back-flow current when the switch is off.

The TPS2100 and TPS2101 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 m) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75uA to decrease the demand on the standby power supply. The MOSFETs in the TPS2100 and TPS2101 do not have the parasitic diodes, found in discrete MOSFETs, which allow the devices to prevent back-flow current when the switch is off.
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类型 标题 下载最新的英语版本 日期
* 数据表 Vaux Power-Distribution Switches 数据表 (Rev. D) 2000年 6月 21日
应用手册 电源多路复用器基础知识 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2021年 8月 5日

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