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LM195QML

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军用级超可靠功率晶体管

产品详情

Operating temperature range (°C) -55 to 125 Rating Military
Operating temperature range (°C) -55 to 125 Rating Military
TO-CAN (NDT) 3 91.6742 mm² 10.03 x 9.14
  • Internal Thermal Limiting
  • Greater Than 1.0A Output Current
  • 3.0 μA Typical Base Current
  • 500 ns Switching Time
  • 2.0V Saturation
  • Base Can be Driven up to 40V Without Damage
  • Directly Interfaces with CMOS or TTL
  • 100% Electrical Burn-in

All trademarks are the property of their respective owners.

  • Internal Thermal Limiting
  • Greater Than 1.0A Output Current
  • 3.0 μA Typical Base Current
  • 500 ns Switching Time
  • 2.0V Saturation
  • Base Can be Driven up to 40V Without Damage
  • Directly Interfaces with CMOS or TTL
  • 100% Electrical Burn-in

All trademarks are the property of their respective owners.

The LM195 is a fast, monolithic power integrated circuit with complete overload protection. This device, which acts as a high gain power transistor, has included on the chip, current limiting, power limiting, and thermal overload protection making it virtually impossible to destroy from any type of overload.

The inclusion of thermal limiting, a feature not easily available in discrete designs, provides virtually absolute protection against overload. Excessive power dissipation or inadequate heat sinking causes the thermal limiting circuitry to turn off the device preventing excessive heating.

The LM195 offers a significant increase in reliability as well as simplifying power circuitry. In some applications, where protection is unusually difficult, such as switching regulators, lamp or solenoid drivers where normal power dissipation is low, the LM195 is especially advantageous.

The LM195 is easy to use and only a few precautions need be observed. Excessive collector to emitter voltage can destroy the LM195 as with any power transistor. When the device is used as an emitter follower with low source impedance, it is necessary to insert a 5.0k resistor in series with the base lead to prevent possible emitter follower oscillations. Although the device is usually stable as an emitter follower, the resistor eliminates the possibility of trouble without degrading performance. Finally, since it has good high frequency response, supply bypassing is recommended.

The LM195 is a fast, monolithic power integrated circuit with complete overload protection. This device, which acts as a high gain power transistor, has included on the chip, current limiting, power limiting, and thermal overload protection making it virtually impossible to destroy from any type of overload.

The inclusion of thermal limiting, a feature not easily available in discrete designs, provides virtually absolute protection against overload. Excessive power dissipation or inadequate heat sinking causes the thermal limiting circuitry to turn off the device preventing excessive heating.

The LM195 offers a significant increase in reliability as well as simplifying power circuitry. In some applications, where protection is unusually difficult, such as switching regulators, lamp or solenoid drivers where normal power dissipation is low, the LM195 is especially advantageous.

The LM195 is easy to use and only a few precautions need be observed. Excessive collector to emitter voltage can destroy the LM195 as with any power transistor. When the device is used as an emitter follower with low source impedance, it is necessary to insert a 5.0k resistor in series with the base lead to prevent possible emitter follower oscillations. Although the device is usually stable as an emitter follower, the resistor eliminates the possibility of trouble without degrading performance. Finally, since it has good high frequency response, supply bypassing is recommended.

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类型 标题 下载最新的英语版本 日期
* 数据表 LM195QML Ultra Reliable Power Transistors 数据表 (Rev. A) 2013年 3月 20日
* SMD LM195QML SMD 5962-87778 2016年 6月 21日
白皮书 常见 LED 功能和 LED 驱动器设计注意事项 英语版 2020年 9月 21日

设计和开发

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TO-CAN (NDT) 3 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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