DRV8161
- Drives two N-channel MOSFETs in half-bridge configuration
- High-side MOSFET source/drain up to 102V (absolute max)
- 8V (5V DRV8162L) to 20V gate drive power supply
- Integrated bootstrap diode
- 16-level gate drive peak current
- 16mA - 1000mA source current
- 32mA - 2000mA sink current
- Source-sink current ratio 1:1, 1:2, 1:3
- Adjustable PWM dead time insertion 20ns - 400ns
- Robust design for motor phase (SH) switching
- Slew rate 20V/ns
- Negative transient voltage -20V
- 2-A strong gate pull down
- Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
- Low-offset current sense amplifier (DRV8161)
- Adjustable gain (5, 10, 20, 40 V/V)
- Flexible PWM control interface; 2-pin PWM, and independent PWM mode
- 13-level VDS over current threshold
- Independent shutdown pin (nDRVOFF)
- Gate driver soft shutdown sequence
- Integrated protection features
- GVDD under voltage (GVDDUV)
- Bootstrap under voltage (BST_UV)
- MOSFET over current protection (VDS)
- Shoot through protection
- Thermal shutdown (OTSD)
- Fault condition indicator (nFAULT)
- Supports 3.3V, and 5V Logic Inputs
The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.
Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.
Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier 数据表 | PDF | HTML | 2024年 5月 6日 | ||
EVM 用户指南 | DRV8161 评估模块 | PDF | HTML | 英语版 | PDF | HTML | 2024年 5月 6日 | |
应用手册 | 所选封装材料的热学和电学性质 | 2008年 10月 16日 |
设计和开发
如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。
DRV8161EVM — DRV8161 评估模块
封装 | 引脚 | 下载 |
---|---|---|
VSSOP (DGS) | 20 | 查看选项 |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点