Home Power management Gate drivers Low-side drivers

UCC27524A-Q1

ACTIVE

Automotive 5-A/5-A dual-channel gate driver with 5-V UVLO and negative input voltage handling

UCC27524A-Q1

ACTIVE

Product details

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level H2
    • Device CDM ESD Classification Level C4B
  • Industry-Standard Pin Out
  • Two Independent Gate-Drive Channels
  • 5-A Peak Source and Sink-Drive Current
  • Independent Enable Function for Each Output
  • TTL and CMOS-Compatible Logic Threshold
    Independent of Supply Voltage
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Inputs and Enable Pin-Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • 4.5-V to 18-V Single-Supply Range
  • Outputs Held Low During VDD-UVLO, (ensures
    glitch-free operation at power-up and power-
    down)
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (7-ns and 6-ns typical)
  • 1-ns Typical Delay Matching Between 2-Channels
  • Ability to Parallel Two Outputs for High-Drive
    Current
  • Outputs Held in LOW When Inputs are Floating
  • SOIC-8 and MSOP-8 PowerPad™ Package Options
  • Operating Temperature Range of –40°C to 140°C
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level H2
    • Device CDM ESD Classification Level C4B
  • Industry-Standard Pin Out
  • Two Independent Gate-Drive Channels
  • 5-A Peak Source and Sink-Drive Current
  • Independent Enable Function for Each Output
  • TTL and CMOS-Compatible Logic Threshold
    Independent of Supply Voltage
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Inputs and Enable Pin-Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • 4.5-V to 18-V Single-Supply Range
  • Outputs Held Low During VDD-UVLO, (ensures
    glitch-free operation at power-up and power-
    down)
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (7-ns and 6-ns typical)
  • 1-ns Typical Delay Matching Between 2-Channels
  • Ability to Parallel Two Outputs for High-Drive
    Current
  • Outputs Held in LOW When Inputs are Floating
  • SOIC-8 and MSOP-8 PowerPad™ Package Options
  • Operating Temperature Range of –40°C to 140°C

The UCC27524A-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A-Q1 device is a variant of the UCC2752x family. The UCC27524A-Q1 device adds the ability to handle –5 V directly at the input pins for increased robustness. The UCC27524A-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A-Q1 device is capable of delivering high-peak current pulses of up to 5-A source and 5-A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 13 ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A-Q1 devices is available in SOIC-8 (D) and MSOP-PowerPAD-8 with exposed pad (DGN) packages.

The UCC27524A-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A-Q1 device is a variant of the UCC2752x family. The UCC27524A-Q1 device adds the ability to handle –5 V directly at the input pins for increased robustness. The UCC27524A-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A-Q1 device is capable of delivering high-peak current pulses of up to 5-A source and 5-A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 13 ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A-Q1 devices is available in SOIC-8 (D) and MSOP-PowerPAD-8 with exposed pad (DGN) packages.

Download View video with transcript Video

Similar products you might be interested in

open-in-new Compare alternates
Drop-in replacement with upgraded functionality to the compared device
UCC27624-Q1 ACTIVE Automotive 5-A/5-A dual-channel gate driver with 4-V UVLO, 30-V VDD and low prop delay Next generation with better negative voltage handling and robustness

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 7
Type Title Date
* Data sheet UCC27524A-Q1 Dual 5-A, High-Speed, Low-Side Gate Driver With Negative Input Voltage Capability datasheet (Rev. B) PDF | HTML 24 Jul 2015
Application note Why use a Gate Drive Transformer? PDF | HTML 04 Mar 2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
White paper Driving the future of HEV/EV with high-voltage solutions (Rev. B) 16 May 2018
Technical article Are you on-board? Demystifying EV charging systems PDF | HTML 31 Jul 2017

Design & development

Please view the Design & development section on a desktop.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos