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  • ISO782xLL 高性能 8000 VPK 增强型隔离式双 LVDS 缓冲器

    • ZHCSFT4A March   2016  – August 2016 ISO7820LL , ISO7821LL

      PRODUCTION DATA.  

  • CONTENTS
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  • ISO782xLL 高性能 8000 VPK 增强型隔离式双 LVDS 缓冲器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  DC Electrical Characteristics
    10. 6.10 DC Supply Current Characteristics
    11. 6.11 Switching Characteristics
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device I/O Schematics
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 PCB Material
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档 
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息
  14. 重要声明
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DATA SHEET

ISO782xLL 高性能 8000 VPK 增强型隔离式双 LVDS 缓冲器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 符合 TIA/EIA-644-A LVDS 标准
  • 信号传输速率:高达 100Mbps
  • 宽电源电压范围:2.25V 至 5.5V
  • 宽环境温度范围:-55°C 至 +125°C
  • 低功耗,100Mbps 时每通道的电流:
    • 典型值 9.3mA (ISO7820LL)
    • 典型值 9.5mA (ISO7821LL)
  • 低传播延迟:17ns(典型值)
  • 行业领先的 CMTI(最小值):±100kV/μs
  • 优异的电磁兼容性 (EMC)
  • 系统级静电放电 (ESD)、瞬态放电 (EFT) 以及抗浪涌保护
  • 低辐射
  • 隔离栅寿命:> 40 年
  • 提供宽体和超宽体 SOIC-16 封装
  • 可承受的隔离浪涌电压高达 12800 VPK
  • 安全相关认证:
    • 符合 DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 标准的 8000 VPK
    • 符合 UL 1577 标准且长达 1 分钟的 5700 VRMS 隔离
    • CSA 组件验收通知 5A,IEC 60950-1 和 IEC 60601-1 终端设备标准
    • 符合 EN 61010-1 和 EN 60950-1 标准的 TUV 认证
    • GB4943.1-2011 CQC 认证
    • 已通过所有认证

2 应用

  • 电机控制
  • 测试和测量
  • 工业自动化
  • 医疗设备
  • 通信系统

3 说明

ISO782xLL 系列器件是高性能隔离式双路 LVDS 缓冲器,隔离电压高达 8000VPK。在隔离 LVDS 总线信号时,该器件可提供高电磁抗扰度,辐射较低,并且具有低功耗特性。每条隔离通道的 LVDS 接收和发送缓冲器均由二氧化硅 (SiO2) 绝缘栅相隔离。

ISO7820LL 器件有两个正向通道。ISO7821LL 器件有一条正向通道和一条反向通道。

凭借创新型芯片设计和布线技术,ISO782xLL系列器件的电磁兼容性得到了显著增强,可缓解系统级 ESD、EFT 和浪涌问题并符合辐射标准。

ISO782xLL 系列器件提供 16 引脚 SOIC 宽体 (DW) 和超宽体 (DWW) 两种封装。

器件信息(1)

器件型号 封装 封装尺寸(标称值)
ISO7820LL
ISO7821LL
DW (16) 10.30mm x 7.50mm
DWW (16) 10.30mm x 14.00mm
  1. 要了解所有可用封装,请见数据表末尾的可订购产品附录。

简化电路原理图

ISO7820LL ISO7821LL alt_sllset8.gif
VCCI 和 GNDI 分别是输入通道的电源和接地连接。
VCCO 和 GNDO 分别是输出通道的电源和接地连接。

4 修订历史记录

Changes from * Revision (March 2016) to A Revision

  • Changed 器件状态“产品预览”至“量产数据”并且已发布完整版本数据表Go

5 Pin Configuration and Functions

ISO7820LL DW and DWW Packages
16-Pin SOIC
Top View
ISO7820LL ISO7821LL po_iso7820ll_sllset8.gif
ISO7821LL DW and DWW Packages
16-Pin SOIC
Top View
ISO7820LL ISO7821LL po_iso7821llx_sllset5.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
ISO7820LL ISO7821LL
EN1 — 7 I Output enable 1. Output pins on side 1 are enabled when EN1 is high or open and in high impedance state when EN1 is low.
EN2 10 10 I Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and in high impedance state when EN2 is low.
GND1 2 2 — Ground connection for VCC1
8 8
GND2 9 9 — Ground connection for VCC2
15 15
INA+ 3 3 I Positive differential input, channel A
INA– 4 4 I Negative differential input, channel A
INB+ 6 11 I Positive differential input, channel B
INB– 5 12 I Negative differential input, channel B
NC 7 — — Not connected
OUTA+ 14 14 O Positive differential output, channel A
OUTA– 13 13 O Negative differential output, channel A
OUTB+ 11 6 O Positive differential output, channel B
OUTB– 12 5 O Negative differential output, channel B
VCC1 1 1 — Power supply, side 1, VCC1
VCC2 16 16 — Power supply, side 2, VCC2

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCCx Supply voltage(2) VCC1, VCC2 –0.5 6 V
V Voltage on input, output, and enable pins OUTx, INx, ENx –0.5 VCCx + 0.5(3) V
IO Maximum current through OUTx pins –20 20 mA
TJ Junction temperature –55 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak voltage values.
(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC1, VCC2 Supply voltage 2.25 3.3 5.5 V
|VID| Magnitude of RX input differential voltage Driven with voltage sources on RX pins 100 600 mV
VIC RX input common-mode voltage VCC1, VCC2 ≥ 3 V 0.5 |VID| 2.4 – 0.5 |VID| V
VCC1, VCC2 < 3 V 0.5 |VID| VCCx – 0.6 – 0.5 |VID| V
RL TX far end differential termination 100 Ω
DR Signaling rate 0 100 Mbps
TA Ambient temperature –55 25 125 °C

6.4 Thermal Information

THERMAL METRIC(1) ISO7820LL
ISO7821LL
UNIT
DW (SOIC) DWW (SOIC)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 82 84.6 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 44.6 46.4 °C/W
RθJB Junction-to-board thermal resistance 46.6 55.3 °C/W
ψJT Junction-to-top characterization parameter 17.8 18.7 °C/W
ψJB Junction-to-board characterization parameter 46.1 54.5 °C/W
RθJC(bottom) Junction-to-case(bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Power Ratings

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 5 pF, input a 50-MHz 50% duty-cycle square wave, EN1 = EN2 = 5.5 V,
RL = 100-Ω differential
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO7821LL
PD Maximum power dissipation (both sides) 156 mW
PD1 Maximum power dissipation (side 1) 78 mW
PD2 Maximum power dissipation (side 2) 78 mW
ISO7820LL
PD Maximum power dissipation (both sides) 152 mW
PD1 Maximum power dissipation (side 1) 36 mW
PD2 Maximum power dissipation (side 2) 116 mW

6.6 Insulation Specifications

over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS SPECIFICATION UNIT
DW DWW
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air >8 >14.5 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface >8 >14.5 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) >21 >21 μm
CTI Tracking resistance (comparative tracking index) DIN EN 60112 (VDE 0303–11); IEC 60112; UL 746A >600 >600 V
Material group According to IEC 60664-1 I I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS I–IV I–IV
Rated mains voltage ≤ 1000 VRMS I–III I–IV
DIN V VDE V 0884–10 (VDE V 0884–10):2006–12(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 2828 VPK
VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB) test; see Figure 1 and Figure 2 1500 2000 VRMS
DC voltage 2121 2828 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM
t = 60 s (qualification)
t = 1 s (100% production)
8000 8000 VPK
VIOSM Maximum surge isolation voltage(3) Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)
8000 8000 VPK
qpd Apparent charge(4) Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 2545 VPK (DW) and
3394 VPK (DWW), tm = 10 s
≤5 ≤5 pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 × VIORM = 3394 VPK (DW) and
4525 VPK (DWW), tm = 10 s
≤5 ≤5
Method b1: At routine test (100% production) and preconditioning (type test)
Vini = VIORM, tini = 1 s;
Vpd(m) = 1.875 × VIORM= 3977 VPK (DW) and
5303 VPK (DWW), tm = 1 s
≤5 ≤5
CIO Barrier capacitance, input to output(5) VIO = 0.4 × sin (2πft), f = 1 MHz ~0.7 ~0.7 pF
RIO Isolation resistance, input to output(5) VIO = 500 V, TA = 25°C >1012 >1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011 >1011
VIO = 500 V at TS = 150°C >109 >109
Pollution degree 2 2
Climatic category 55/125/21 55/125/21
UL 1577
VISO Withstanding isolation voltage VTEST = VISO = 5700 VRMS, t = 60 s (qualification);
VTEST = 1.2 × VISO = 6840 VRMS,
t = 1 s (100% production)
5700 5700 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device.

6.7 Safety-Related Certifications

VDE CSA UL CQC TUV
Plan to certify according to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 and DIN EN 60950-1 (VDE 0805 Teil 1):2011-01 Plan to certify under CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 Plan to certify according to UL 1577 Component Recognition Program Plan to certify according to GB 4943.1-2011 Plan to certify according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced insulation
Maximum transient isolation voltage, 8000 VPK;
Maximum repetitive peak isolation voltage, 2121 VPK (DW), 2828 VPK (DWW);
Maximum surge isolation voltage, 8000 VPK
Reinforced insulation per CSA 60950-1-07+A1+A2 and IEC 60950-1 2nd Ed., 800 VRMS (DW package) and 1450 VRMS (DWW package) max working voltage (pollution degree 2, material group I); Single protection,
5700 VRMS
Reinforced Insulation, Altitude ≤ 5000 m, Tropical Climate, 250 VRMS maximum working voltage 5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to working voltage of 600 VRMS (DW package) and 1000 VRMS (DWW package)
2 MOPP (Means of Patient Protection) per CSA 60601-1:14 and IEC 60601-1 Ed. 3.1, 250 VRMS (354 VPK) max working voltage (DW package) 5700 VRMS Reinforced insulation per
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working voltage of 800 VRMS (DW package) and 1450 VRMS (DWW package)
Certification planned Certification planned Certification planned Certification planned Certification planned

6.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DW PACKAGE
IS Safety input, output, or supply current RθJA = 82°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 3
277 mA
RθJA = 82°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 3
423
RθJA = 82°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 3
554
PS Safety input, output, or total power RθJA = 82°C/W, TJ = 150°C, TA = 25°C,
see Figure 5
1524 mW
TS Maximum safety temperature 150 °C
DWW PACKAGE
IS Safety input, output, or supply current RθJA = 84.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 4
269 mA
RθJA = 84.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 4
410
RθJA = 84.6°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 4
537
PS Safety input, output, or total power RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C,
see Figure 6
1478 mW
TS Maximum safety temperature 150 °C

The maximum safety temperature is the maximum junction temperature specified for the device. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information is that of a device installed on a High-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.

6.9 DC Electrical Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IIN(EN) Leakage Current on ENx pins Internal pullup on ENx pins 13 40 μA
VCC+(UVLO) Positive-going undervoltage-lockout (UVLO) threshold 2.25 V
VCC–(UVLO) Negative-going UVLO threshold 1.7 V
VHYS(UVLO) UVLO threshold hysteresis 0.2 V
VEN(ON) EN pin turn-on threshold 0.7 VCCx V
VEN(OFF) EN pin turn-off threshold 0.3 VCCx V
VEN(HYS) EN pin threshold hysteresis 0.1 VCCx V
CMTI Common-mode transient immunity VI = VCCI(1) or 0 V;
VCM = 1000 V; see Figure 25
100 120 kV/μs
LVDS TX
|VOD| TX DC output differential voltage RL = 100 Ω, See Figure 26 250 350 450 mV
∆VOD Change in TX DC output differential between logic 1 and 0 states RL = 100 Ω, see Figure 26 –10 0 10 mV
VOC TX DC output common mode voltage RL = 100 Ω, see Figure 26 1.125 1.2 1.375 V
∆VOC TX DC common mode voltage difference RL = 100 Ω, see Figure 26 –25 0 25 mV
IOS TX output short circuit current through OUTx OUTx = 0 10 mA
OUTxP = OUTxM 10
IOZ TX output current when in high impedance ENx = 0, OUTx from 0 to VCC –5 5 µA
COUT TX output pad capacitance on OUTx at 1 MHz DW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz
10 pF
DWW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz
10
LVDS RX
VIC RX input common mode voltage VCC1, VCC2 ≥ 3 V 0.5 |VID| 1.2 2.4 – 0.5 |VID| V
VCC1, VCC2 < 3 V 0.5 |VID| 1.2 VCCx – 0.6 – 0.5 |VID|
VIT1 Positive going RX input differential threshold Across VIC 50 mV
VIT2 Negative going RX input differential threshold Across VIC –50 mV
IINx Input current on INx From 0 to VCCx (each input independently) 10 20 µA
IINxP – IINxM Input current balance From 0 to VCCx –6 6 µA
CIN RX input pad capacitance on INx at 1 MHz DW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz
6.6 pF
DWW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz
7.5
(1) VCCI = Input-side VCCx; VCCO = Output-side VCCx.

6.10 DC Supply Current Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO7821LL
ICC1
ICC2
Supply current
side 1 and side 2
2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.2 3.3 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 3.4 5.1
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 6.1 9.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 7.4 11.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
6.7 10.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
7.4 11.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
8.3 12.5
4.5 V < VCC1,
VCC2 < 5.5 V
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.2 3.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 3.5 5.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 6.4 9.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 7.8 11.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
7.1 10.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
8.1 12.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
9.5 14.1
ISO7820LL
ICC1 Supply current
side 1
2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.7 4.3 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 5.3 7.9
EN1 = EN2 = 1, RL = 100-Ω differential, VID≥ 50 mV 2.7 4.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 5.2 8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
4 6.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
4.1 6.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
4.3 6.4
4.5 V < VCC1,
VCC2 < 5.5 V
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.8 4.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 5.5 8.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 2.9 4.5
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 5.5 8.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
4.2 6.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
4.3 6.4
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
4.5 6.6
ISO7820LL (continued)
ICC2 Supply current
side 2
2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 1.1 1.7 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 1.1 1.7
VID≥ 50 mV 9.1 13.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 9.2 13.9
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
9.2 13.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
10.3 15.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
12.1 17.9
4.5 V < VCC1,
VCC2 < 5.5 V
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 1.2 1.8
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 1.2 1.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 9.7 14.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 9.7 14.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
9.7 14.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
11.5 17.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
14.2 21

6.11 Switching Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LVDS CHANNEL
tPLH
tPHL
Propagation delay time 17 25 ns
PWD Pulse width distortion |tPHL – tPLH| 0 4.5 ns
tsk(o) Channel-to-channel output skew time Same directional channels, same voltage and temperature 2.5 ns
tsk(pp) Part-part skew Same directional channels, same voltage and temperature 4.5 ns
tCMset Common-mode settling time after
EN = 0 to EN = 1 transition.
Common-mode capacitive
load = 100 pF to 0.5 nF
20 µs
tfs Default output delay time from input power loss Measured from the time VCC goes below 1.7 V, see Figure 24 0.2 9 µs
tie Time interval error, or peak-to-peak jitter
216 – 1 PRBS data at 100 Mbps;
RX VID = 350 mVPP, 1 ns trf 10% to 90%, TA = 25°C, VCC1, VCC2 = 3.3 V
1 ns
LVDS TX AND RX
trf TX differential rise/fall times (20% to 80%) See Figure 22 300 780 1380 ps
∆VOC(pp) TX common-mode voltage peak-to-peak at 100 Mbps 0 150 mVPP
tPLZ, tPHZ TX disable time—valid output to HiZ See Figure 23 10 20 ns
tPZH Enable propagation delay, high impedance-to-high output See Figure 23 10 20 ns
tPZL Enable propagation delay, high impedance-to-low output See Figure 23 2 2.5 μs
|VID| Magnitude of RX input differential voltage for valid operation Driven with voltage sources on RX pins, see the figures in the Parameter Measurement Information section 100 600 mV
trf(RX) Allowed RX input differential rise and fall times (20% to 80%) See Figure 27 1 0.3 × UI(1) ns
(1) UI is the unit interval.

6.12 Insulation Characteristics Curves

ISO7820LL ISO7821LL tddb_curve_reinforced_dw.gif
TA upto 150°C Operating lifetime = 135 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 1500 VRMS
Figure 1. Reinforced Isolation Capacitor Lifetime Projection for Devices in DW Package
ISO7820LL ISO7821LL D006_sllset8.gif Figure 3. Thermal Derating Curve for Limiting Current for DW Package
ISO7820LL ISO7821LL D007_sllset8.gif Figure 5. Thermal Derating Curve for Limiting Power for DW Package
ISO7820LL ISO7821LL tddb_curve_reinforced_dww.gif
TA upto 150°C Operating lifetime = 34 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 2000 VRMS
Figure 2. Reinforced Isolation Capacitor Lifetime Projection for Devices in DWW Package
ISO7820LL ISO7821LL D008_sllset8.gif Figure 4. Thermal Derating Curve for Limiting Current for DWW Package
ISO7820LL ISO7821LL D009_sllset8.gif Figure 6. Thermal Derating Curve for Limiting Power for DWW Package

6.13 Typical Characteristics

ISO7820LL ISO7821LL D001_sllset8.gif
TA = 25°C CH-A toggle
Figure 7. ISO7821LL Supply Current vs Data Rate (CH-A)
ISO7820LL ISO7821LL D003_sllset8.gif
TA = 25°C
Figure 9. ISO7821LL Supply Current vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL D005_sllset8.gif
Data rate = 100 Mbps CH-B toggle
Figure 11. ISO7821LL Supply Current vs Temperature
(CH-B)
ISO7820LL ISO7821LL D021_sllset8.gif
TA = 25°C CH-B toggle
Figure 13. ISO7820LL Supply Current vs Data Rate
(CH-B)
ISO7820LL ISO7821LL D023_sllset8.gif
Data rate = 100 Mbps CH-A toggle
Figure 15. ISO7820LL Supply Current vs Temperature
(CH-A)
ISO7820LL ISO7821LL D012_sllset8.gif
Figure 17. Propagation Delay Time vs Temperature
ISO7820LL ISO7821LL D014_sllset8.gif
TA = 25°C
Figure 19. Output Voltage vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL waveform_disable_time_sllset8.gif Figure 21. Disable Time (tPLZ, tPHZ)
ISO7820LL ISO7821LL D002_sllset8.gif
TA = 25°C CH-B toggle
Figure 8. ISO7821LL Supply Current vs Data Rate (CH-B)
ISO7820LL ISO7821LL D004_sllset8.gif
Data rate = 100 Mbps CH-A toggle
Figure 10. ISO7821LL Supply Current vs Temperature
(CH-A)
ISO7820LL ISO7821LL D020_sllset8.gif
TA = 25°C CH-A toggle
Figure 12. ISO7820LL Supply Current vs Data Rate
(CH-A)
ISO7820LL ISO7821LL D022_sllset8.gif
TA = 25°C
Figure 14. ISO7820LL Supply Current vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL D010_sllset8.gif
Data rate = 100 Mbps CH-B toggle
Figure 16. ISO7820LL Supply Current vs Temperature
(CH-B)
ISO7820LL ISO7821LL D013_sllset8.gif
TA = 25°C
Figure 18. Propagation Delay Time vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL waveform_disable_to_enable_time_sllset8.gif
Figure 20. Disable to Enable Time (tPZH, tPZL)

7 Parameter Measurement Information

ISO7820LL ISO7821LL switch_test_circuit_sllset5.gif
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B. CP = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 22. Switching Characteristics Test Circuit and Voltage Waveforms
ISO7820LL ISO7821LL delay_time_sllset8.gif
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 10 kHz, 50% duty cycle,
tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B. CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 23. Enable and Disable Propagation Delay Time Test Circuit and Waveform
ISO7820LL ISO7821LL failsafe_sllset5.gif
A. CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 24. Default Output Delay Time Test Circuit and Voltage Waveforms
ISO7820LL ISO7821LL com_tran_imm_test_circ_sllset5.gif
A. CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 25. Common-Mode Transient Immunity Test Circuit
ISO7820LL ISO7821LL driver_test_circuit_sllset8.gif Figure 26. Driver Test Circuit
ISO7820LL ISO7821LL td_definitions_sllset8.gif Figure 27. Voltage Definitions and Waveforms

8 Detailed Description

8.1 Overview

The ISO782xLL is a family of isolated LVDS buffers. The differential signal received on the LVDS input pins is first converted to CMOS logic levels. The signal is then transmitted across a silicon-dioxide (SiO2) based capacitive-isolation barrier using an on-off keying (OOK) modulation scheme. A high frequency carrier transmitted across the barrier represents one logic state and an absence of a carrier represents the other logic state. On the other side of the barrier a demodulator converts the OOK signal back to logic levels, which is then converted to LVDS outputs by a differential driver. These devices incorporate advanced circuit techniques to maximize CMTI performance and minimize radiated emissions.

The ISO782xLL family of devices is TIA/EIA-644-A standard compliant. The LVDS transmitters drive a minimum differential-output voltage magnitude of 250 mV into a 100-Ω load, and the LVDS receivers are capable of detecting differential signals ≥50 mV in magnitude. The device consumes 10 mA per channel at 100 Mbps with 5-V supplies.

The Functional Block Diagram section shows a conceptual block diagram of one channel of the ISO782xLL family of devices.

8.2 Functional Block Diagram

ISO7820LL ISO7821LL fbd_sllset8.gif

8.3 Feature Description

The ISO782xLL family of devices is available in two channel configurations with a default differential high-output state.

PART NUMBER CHANNEL DIRECTION RATED ISOLATION MAXIMUM DATA RATE DEFAULT DIFFERENTIAL OUTPUT
ISO7820LL 2 Forward 5700 VRMS / 8000 VPK (1) 100 Mbps High
ISO7821LL 1 Forward, 1 Reverse
(1) See the Safety-Related Certifications section for detailed isolation ratings.

8.4 Device Functional Modes

Table 1 lists the functional modes for the ISO782xLL family of devices.

Table 1. ISO782xLL Function Table(1)

VCCI VCCO INPUT
(INx±)(2)
OUTPUT ENABLE
(ENx)
OUTPUT
(OUTx±)(3)
COMMENTS
PU PU H H or open H Normal Operation:
A channel output assumes the logic state of the input.
L H or open L
I H or open H or L
X PU X L Z A low-logic state at the output enable causes the outputs to be in high impedance.
PD PU X H or open H Default mode: When VCCI is unpowered, a channel output assumes the logic high state.
When VCCI transitions from unpowered to powered up, a channel output assumes the logic state of the input.
When VCCI transitions from powered up to unpowered, a channel output assumes the selected default high state.
X PD X X Undetermined When VCCO is unpowered, a channel output is undetermined.
When VCCO transitions from unpowered to powered-up, a channel output assumes the logic state of the input
(1) VCCI = input-side VCC; VCCO = output-side VCC; PU = powered up (VCCx ≥ 2.25 V); PD = powered down (VCCx ≤ 1.7 V); X = irrelevant
(2) Input (INx±): H = high level (VID ≥ 50 mV); L = low level (VID ≤ –50 mV); I = indeterminate (–50 mV < VID < 50 mV)
(3) Output (OUTx±): H = high level (VOD ≥ 250 mV); L = low level (VOD ≤ –250 mV); Z = high impedance.

8.4.1 Device I/O Schematics

ISO7820LL ISO7821LL device_IO_sllset8.gif Figure 28. Device I/O Schematics

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

9.1 Application Information

The ISO782xLL is a family of high-performance, reinforced isolated dual-LVDS buffers. Isolation can be used to help achieve human and system safety, to overcome ground potential difference (GPD), or to improve noise immunity and system performance.

The LVDS signaling can be used over most interfaces to achieve higher data rates because the LVDS is only a physical layer. LVDS can also be used for a proprietary communication scheme implemented between a host controller and a slave. Example use cases include connecting a high-speed I/O module to a host controller, a subsystem connecting to a backplane, and connection between two high-speed subsystems. Many of these systems operate under harsh environments making them susceptible to electromagnetic interferences, voltage surges, electrical fast transients (EFT), and other disturbances. These systems must also meet strict limits on radiated emissions. Using isolation in combination with a robust low-noise signaling standard such as LVDS, achieves both high immunity to noise and low emissions.

Example end applications that could benefit from the ISO782xLL family of devices include high-voltage motor control, test and measurement, industrial automation, and medical equipment.

9.2 Typical Application

One application for isolated LVDS buffers is for point-to-point communication between two high-speed capable, application-specific integrated circuits (ASICs) or FPGAs. In a high-voltage motor control application, for example, Node 1 could be a controller on a low-voltage or earth referenced board, and Node 2, could be controller placed on the power board, biased to high voltage. Figure 29 and Figure 30 show the application schematics.

Figure 30 provides further details of using the ISO782xLL family of devices to isolate the LVDS interface. The LVDS connection to the ISO782xLL family of devices can be traces on a board (shown as straight lines between Node 1 and the ISO782xLL device), a twisted pair cable (as shown between Node 2 and the ISO782xLL device), or any other controlled impedance channel. Differential 100-Ω terminations are placed near each LVDS receiver. The characteristic impedance of the channel should also be 100-Ω differential.

In the example shown in Figure 29 and Figure 30, the ISO782xLL family of devices provides reinforced or safety isolation between the high-voltage elements of the motor drive and the low-voltage control circuitry. This configuration also ensures reliable communication, regardless of the high conducted and radiated noise present in the system.

ISO7820LL ISO7821LL typ_app_motor_control_sllset8.gif Figure 29. Isolated LVDS Interface in Motor Control Application
ISO7820LL ISO7821LL typ_app_sllset8.gif Figure 30. Isolated LVDS Interface Between Two Nodes (ASIC or FPGA)

9.2.1 Design Requirements

For the ISO782xLL family of devices, use the parameters listed in Table 2.

Table 2. Design Parameters

PARAMETER VALUE
Supply voltage range, VCC1 and VCC2 2.25 V to 5.5 V
Receiver common-mode voltage range For VCCx ≥ 3 V: 0.5 |VID| to 2.4 – 0.5 |VID|
For VCCx < 3 V: 0.5 |VID| to VCCx – 0.6 – 0.5 |VID|
External termination resistance 100 Ω
Interconnect differential characteristic impedance 100 Ω
Signaling rate 0 to 100 Mbps
Decoupling capacitor from VCC1 and GND1 0.1 µF
Decoupling capacitor from VCC2 and GND2 0.1 µF

9.2.2 Detailed Design Procedure

The ISO782xLL family of devices has minimum requirements on external components for correct operation. External bypass capacitors (0.1 µF) are required for both supplies (VCC1 and VCC2). A termination resistor with a value of 100 Ω is required between each differential input pair (INx+ and INx–), with the resistors placed as close to the device pins as possible. A differential termination resistor with a value of 100 Ω is required on the far end for the LVDS transmitters. Figure 31 and Figure 32 show these connections.

ISO7820LL ISO7821LL typ_app_hook-up_820_sllset8.gif Figure 31. Typical ISO7820LL Circuit Hook-Up
ISO7820LL ISO7821LL typ_app_hook-up_821_sllset8.gif Figure 32. Typical ISO7821LL Circuit Hook-Up

9.2.2.1 Electromagnetic Compatibility (EMC) Considerations

Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge (ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level performance and reliability depends, to a large extent, on the application board design and layout, the ISO782xLL family of devices incorporates many chip-level design improvements for overall system robustness. Some of these improvements include:

  • Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
  • Low-resistance connectivity of ESD cells to supply and ground pins.
  • Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
  • Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance path.
  • PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic SCRs.
  • Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.

9.2.3 Application Curve

Figure 33 shows a typical eye diagram of the ISO782xLL family of devices which indicates low jitter and a wide-open eye at the maximum data rate of 100 Mbps.

ISO7820LL ISO7821LL eye_diagram_sllset8.png Figure 33. Eye Diagram at 100 Mbps PRBS, 3.3 V and 25°C

 

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