ZHCSEV7I
June 2011 – October 2019
LM5113
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
简化应用示意图
4
修订历史记录
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Input and Output
7.3.2
Start-Up and UVLO
7.3.3
HS Negative Voltage and Bootstrap Supply Voltage Clamping
7.3.4
Level Shift
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
VDD Bypass Capacitor
8.2.2.2
Bootstrap Capacitor
8.2.2.3
Power Dissipation
8.2.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Examples
11
器件和文档支持
11.1
文档支持
11.1.1
相关文档
11.2
支持资源
11.3
商标
11.4
静电放电警告
11.5
Glossary
12
机械、封装和可订购信息
6.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1000
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.