ZHCSD89A October   2014  – January 2015 TPD3S014 , TPD3S044

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 简化电路原理图
  5. 修订历史记录
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics: TJ = TA = 25°C
    6. 8.6 Electrical Characteristics: -40°C ≤ TJ ≤ 125°C
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Enable
      3. 9.3.3 Internal Charge Pump
      4. 9.3.4 Current Limit
      5. 9.3.5 Output Discharge
      6. 9.3.6 Input and Output Capacitance
      7. 9.3.7 Power Dissipation and Junction Temperature
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operation with VIN < 4 V (Minimum VIN)
      2. 9.4.2 Operation With EN Control
      3. 9.4.3 Operation of Level 4 IEC61000-4-2 ESD Protection
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 USB2.0 Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 USB3.0 Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 术语表
  14. 14机械封装和可订购信息

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)(1)(2)
MIN MAX UNIT
Input voltage(3) VIN –0.3 6 V
VOUT –0.3 6
EN –0.3 6
D1 –0.3 6
D2 –0.3 6
Voltage range from VIN to VOUT –6 6 V
Junction temperature, TJ Internally limited
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are with respect to GND unless otherwise noted.
(3) See the Input and Output Capacitance section.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±500
IEC 61000-4-2 Contact Discharge(3) VOUT, Dx pins ±12000
IEC 61000-4-2 Air-Gap Discharge(3) VOUT, Dx pins ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance.
(3) VOUT was tested on a PCB with input and output bypassing capacitors of 0.1 µF and 120 µF, respectively.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 4.5 5.5 V
VEN Input voltage, EN 0 5.5 V
VIH High-level Input voltage, EN 2 V
VIL Low-level Input voltage, EN 0.7 V
CIN Input de-coupling capacitance, IN to GND 0.1 µF
IOUT(1) Continuous output current (TPD3S014) 0.5 A
Continuous output current (TPD3S044) 1.5
TJ Operating junction temperature –40 125 °C
(1) Package and current ratings may require an ambient temperature derating of 85°C

8.4 Thermal Information

THERMAL METRIC(1)(2) TPD3S0x4 UNIT
DBV
6 PINS
RθJA Junction-to-ambient thermal resistance 185.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 124.7
RθJB Junction-to-board thermal resistance 32.0
ψJT Junction-to-top characterization parameter 23.7
ψJB Junction-to-board characterization parameter 31.5
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A
RθJA(Custom) See the Power Dissipation and Junction Temperature section 120.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) See Device Comparison Table.

8.5 Electrical Characteristics: TJ = TA = 25°C

Unless otherwise noted: VIN = 5 V, VEN = VIN, IOUT = 0 A. See Device Comparison for the rated current of each part number. Parametrics over a wider operational range are shown in the second Electrical Characteristics: –40°C ≤ TJ ≤ 125°C table.
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input – Output resistance TPD3S014 97 110
TPD3S014: –40°C ≤ (TJ, TA) ≤ 85°C 96 130
TPD3S044 74 91
TPD3S044: –40°C ≤ (TJ, TA) ≤ 85°C 74 106
CURRENT LIMIT
IOS(2) Current limit, see Figure 27 TPD3S014 0.67 0.85 1.01 A
TPD3S044 1.70 2.15 2.50
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0A 0.02 1 µA
–40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 2
ISE Supply current, switch enabled IOUT = 0A 66 74 µA
–40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 85
IREV Reverse leakage current VOUT = 5 V, VIN = 0 V, Measure IVOUT 0.2 1 µA
–40°C ≤ (TJ, TA) ≤ 85°C, VOUT = 5 V, VIN = 0 V, measure IVOUT 5
OUTPUT DISCHARGE
RPD Output pull-down resistance(3) VIN = VOUT = 5 V, disabled 400 456 600 Ω
ESD PROTECTION
ΔCIO Differential capacitance between the D1, D2 lines ƒ = 1 MHz, VIO = 2.5 V 0.02 pF
CIO (D1, D2 to GND) ƒ = 1 MHz, VIO = 2.5 V 1.4 pF
RDYN Dynamic on-resistance D1, D2 IEC clamps(4) Dx to GND 0.2 Ω
GND to Dx
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) See Current Limit for explanation of this parameter.
(3) These Parameters are provided for reference only, and do not constitute a part of TI’s published device specifications for purposes of TI’s product warranty.
(4) RDYN was extracted using the least squares first of the TLP characteristics between I = 20A and I = 30A.

8.6 Electrical Characteristics: –40°C ≤ TJ ≤ 125°C

Unless otherwise noted: 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C. See the Device Comparison for the rated current of each part number.
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input – output resistance TPD3S014 97 154
TPD3S044 74 121
ENABLE INPUT (EN)
Threshold Input rising 1 1.45 2 V
Hysteresis 0.13 V
Leakage current VEN = 0 V –1 0 1 µA
tON Turn on time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑
See Figure 26
1 1.6 2.2 ms
tOFF Turn off time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓
See Figure 26
1.7 2.1 2.7 ms
tR Rise time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25 0.4 0.64 0.9 ms
tF Fall time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25 0.25 0.4 0.8 ms
CURRENT LIMIT
IOS(2) Current limit, see Figure 27 TPD3S014 0.65 0.85 1.05 A
TPD3S044 1.60 2.15 2.70
tIOS Short-circuit response time(3) VIN = 5 V (see Figure 27)
One Half full load → RSHORT = 50 mΩ Measure from application to when current falls below 120% of final value
2 µs
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.02 10 µA
ISE Supply current, switch enabled IOUT = 0 A 66 94 µA
IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, Measure IVOUT 0.2 20 µA
UNDERVOLTAGE LOCKOUT
VUVLO Rising threshold VIN 3.5 3.77 4 V
Hysteresis VIN 0.14 V
OUTPUT DISCHARGE
RPD Output pull-down resistance VIN = 4 V, VOUT = 5 V, Disabled 350 545 1200 Ω
VIN = 5 V, VOUT = 5 V, Disabled 300 456 800
THERMAL SHUTDOWN
TSHDN Rising threshold (TJ) In current limit 135 °C
Not in current limit 155
Hysteresis(3) 20 °C
ESD PROTECTION
II Input leakage current (D1, D2) VI = 3.3 V 0.02 1 µA
VD Diode forward voltage (D1, D2); Lower clamp diode IO = 8 mA 0.95 V
VBR Breakdown voltage (D1, D2) IBR = 1 mA 6 V
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) See Current Limit section for explanation of this parameter.
(3) These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s product warranty.

8.7 Typical Characteristics

TPD3S014 TPD3S044 TPD3S0x4_Typ_App.gif
1. During the short applied tests, 300µF is used because of the use of an external supply.
Figure 1. Test Circuit for System Operation in Typical Characteristics
TPD3S014 TPD3S044 D002_TPD3S0x4_Graph_Data.gif
Figure 2. TPD3S014 Turn ON Into 10Ω
TPD3S014 TPD3S044 D003_TPD3S0x4_Graph_Data.gif
Figure 4. TPD3S014 Pulsed Output Short
TPD3S014 TPD3S044 D001_TPD3S0x4_Graph_Data.gif
Figure 3. TPD3S014 Enable into Short
TPD3S014 TPD3S044 D034_TPD3S0x4_Graph_Data.gif
Figure 5. TPD3S014 Short Applied
TPD3S014 TPD3S044 D006_TPD3S0x4_Graph_Data.gif
Figure 6. TPD3S044 Turn ON Into 3.3Ω
TPD3S014 TPD3S044 D008_TPD3S0x4_Graph_Data.gif
Figure 8. TPD3S044 Pulsed Output Short
TPD3S014 TPD3S044 D007_SLVSCP4.gif
Figure 10. Reverse Leakage Current (IREV) vs Temperature
TPD3S014 TPD3S044 D026_TPD3S0x4_Graph_Data.gif
Figure 12. Short Circuit Current (IOS) vs Temperature
TPD3S014 TPD3S044 D028_TPD3S0x4_Graph_Data.gif
Figure 14. Output Rise Time (tR) vs Temperature
TPD3S014 TPD3S044 D030_TPD3S0x4_Graph_Data.gif
Figure 16. Disabled Supply Current (ISD) vs Input Voltage
TPD3S014 TPD3S044 D032_TPD3S0x4_Graph_Data.gif
Figure 18. Enabled Supply Current (ISE) vs Temperature
TPD3S014 TPD3S044 D022_TPD3S0x4_Graph_Data.gif
Figure 20. TPD3S044 D1/D2 Positive TLP Curve
TPD3S014 TPD3S044 D024_TPD3S0x4_Graph_Data.gif
Figure 22. D1/D2 I-V Curve
TPD3S014 TPD3S044 D037_TPD3S0x4_Graph_Data.gif
Figure 24. D1/D2 IEC61000-4-2 –8-kV Contact
TPD3S014 TPD3S044 D007_TPD3S0x4_Graph_Data.gif
Figure 7. TPD3S044 Enable Into Short
TPD3S014 TPD3S044 D035_TPD3S0x4_Graph_Data.gif
Figure 9. TPD3S044 Short Applied
TPD3S014 TPD3S044 D025_TPD3S0x4_Graph_Data.gif
Figure 11. Output Discharge Current vs Output Voltage
TPD3S014 TPD3S044 D027_TPD3S0x4_Graph_Data.gif
Figure 13. Output Fall Time (tF) vs Temperature
TPD3S014 TPD3S044 D029_TPD3S0x4_Graph_Data.gif
Figure 15. Disabled Supply Current (ISD) vs Temperature
TPD3S014 TPD3S044 D031_TPD3S0x4_Graph_Data.gif
Figure 17. Reverse Leakage Current (IREV) vs Output Voltage
TPD3S014 TPD3S044 D033_TPD3S0x4_Graph_Data.gif
Figure 19. Enabled Supply Current (ISE) vs Input Voltage
TPD3S014 TPD3S044 D023_TPD3S0x4_Graph_Data.gif
Figure 21. TPD3S044 D1/D2 Negative TLP Curve
TPD3S014 TPD3S044 D036_TPD3S0x4_Graph_Data.gif
Figure 23. D1/D2 IEC61000-4-2 +8-kV Contact