ZHCSC62D March   2014  – December 2017 UCC28630 , UCC28631 , UCC28632 , UCC28633 , UCC28634

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化电路原理图
      2.      典型应用测得的稳压
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     PIN Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  High-Voltage Current Source Start-Up Operation
      2. 8.3.2  AC Input UVLO / Brownout Protection
      3. 8.3.3  Active X-Capacitor Discharge (UCC28630 and UCC28633 only)
        1. 8.3.3.1 Improved Performance with UCC28630 and UCC28633
      4. 8.3.4  Magnetic Input and Output Voltage Sensing
      5. 8.3.5  Fixed-Point Magnetic Sense Sampling Error Sources
      6. 8.3.6  Magnetic Sense Resistor Network Calculations
        1. 8.3.6.1 Step 1
        2. 8.3.6.2 Step 2
        3. 8.3.6.3 Step 3
        4. 8.3.6.4 Step 4
      7. 8.3.7  Magnetic Sensing: Power Stage Design Constraints
      8. 8.3.8  Magnetic Sense Voltage Control Loop
      9. 8.3.9  Peak Current Mode Control
      10. 8.3.10 IPEAK Adjust vs. Line
      11. 8.3.11 Primary-Side Constant-Current Limit (CC Mode)
      12. 8.3.12 Primary-Side Overload Timer (UCC28630 only)
      13. 8.3.13 Overload Timer Adjustment (UCC28630 only)
      14. 8.3.14 CC-Mode IOUT(lim) Adjustment
      15. 8.3.15 Fault Protections
      16. 8.3.16 Pin-Fault Detection and Protection
      17. 8.3.17 Over-Temperature Protection
      18. 8.3.18 External Fault Input
      19. 8.3.19 External SD Pin Wake Input (except UCC28633)
      20. 8.3.20 External Wake Input at VSENSE Pin (UCC28633 Only)
      21. 8.3.21 Mode Control and Switching Frequency Modulation
      22. 8.3.22 Frequency Dither For EMI (except UCC28632)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Internal Key Parameters
  9. Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Notebook Adapter, 19.5 V, 65 W
      2. 9.2.2 UCC28630 Application Schematic
      3. 9.2.3 Design Requirements
      4. 9.2.4 Detailed Design Procedure
        1. 9.2.4.1  Custom Design With WEBENCH® Tools
        2. 9.2.4.2  Input Bulk Capacitance and Minimum Bulk Voltage
        3. 9.2.4.3  Transformer Turn Ratio
        4. 9.2.4.4  Transformer Magnetizing Inductance
        5. 9.2.4.5  Current Sense Resistor RCS
        6. 9.2.4.6  Transformer Constraint Verification
        7. 9.2.4.7  Transformer Selection and Design
        8. 9.2.4.8  Slope Compensation Verification
        9. 9.2.4.9  Power MOSFET and Output Rectifier Selection
        10. 9.2.4.10 Output Capacitor Selection
        11. 9.2.4.11 Calculation of CC Mode Limit Point
        12. 9.2.4.12 VDD Capacitor Selection
        13. 9.2.4.13 Magnetic Sense Resistor Network Selection
        14. 9.2.4.14 Output LED Pre-Load Resistor Calculation
      5. 9.2.5 External Wake Pulse Calculation at VSENSE Pin (UCC28633 Only)
      6. 9.2.6 Energy Star Average Efficiency and Standby Power
      7. 9.2.7 Application Performance Plots
    3. 9.3 Dos and Don'ts
      1. 9.3.1 Test and Debug Recommendations
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 HV Pin
      2. 11.1.2 VDD Pin
      3. 11.1.3 VSENSE Pin
      4. 11.1.4 CS Pin
      5. 11.1.5 SD Pin
      6. 11.1.6 DRV Pin
      7. 11.1.7 GND Pin
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 商标
    2. 12.2 静电放电警告
    3. 12.3 Glossary
    4. 12.4 器件支持
      1. 12.4.1 开发支持
        1. 12.4.1.1 使用 WEBENCH® 工具创建定制设计
    5. 12.5 文档支持
      1. 12.5.1 相关文档
        1. 12.5.1.1 相关链接
  13. 13机械、封装和可订购信息

External SD Pin Wake Input (except UCC28633)

During low-power modes (when fSW < fSMP(max)), the device disables the internal pull-up on the SD pin. This action allows the pin voltage to fall to GND, and the SD pin then functions as a transient wake-up input. In this case, if the pin rises above the wake threshold while the device is in low-power sleep mode, the device wakes and starts PWM pulses immediately. This feature is useful for applications that require a faster response to load transients from zero or near-zero load, where a wake-up signal can be appropriately coupled to the SD pin from the secondary side.

Figure 38 describes a typical secondary-side wake circuit and coupling of the wake signal to the controller on the primary side. This circuit uses a TL103W component which is an integrated reference plus two op-amps in a convenient SOIC-8 package. Both op-amps are connected to the same internal 2.5-V TL431 type reference, with a 3-resistor divider chain allowing each op-amp to monitor a different level. The upper op-amp output is low as long as the device is regulating the output voltage normally. If a sufficiently large load transient occurs while the primary-side controller is in sleep mode, the output voltage drops below a transient wake level. The upper op-amp output goes high, driving current through the low-cost wake signal opto-coupler. On the primary side, the wake opto-coupler pulls up the SD pin above the wake threshold and forces PWM switching as a reaction to the load transient.

The lower op-amp section monitors the output voltage and its output goes low only when the output voltage is above a minimum enable threshold for the secondary-side wake-up monitor. This action is necessary so that under certain conditions, such as a start-up sequence or short-circuit condition (when the output voltage is already below the transient wake level) that the secondary-side circuit does not continually drive the wake opto-coupler, which could activate an SD pin fault during pin-fault checking at start-up.

UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 fig40_lusbw3.gifFigure 38. Typical Secondary-Side Voltage Monitor and Wake-Up Circuit for Interfacing to the SD Pin