SLVK152B August   2023  – November 2023 TPS7H2140-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Data Sheet Electrical Parameters
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report
  9.   B Appendix B: LDR TID Report
  10.   C Revision History

1.2 Device Details

Table 1-1 lists the device information used in the TID HDR characterization.

Table 1-1 Device and Exposure Details
TID HDR and LDR Details
Package28-pin HTSSOP (PWP)
TI part nameTPS7H2140MPWPTSEP
Device functionQuad-channel eFuse
Quantity testedHDR :
  • Five biased and five unbiased units at 20-krad(Si) levels
  • Five biased and five unbiased units at 30-krad(Si) levels
  • Five correlation units
LDR:
  • Five biased and five unbiased units at 20-krad(Si) levels
  • Five biased and five unbiased units at 30-krad(Si) levels
  • Five correlation units
HDR radiation facilityTexas Instruments CLAB Dallas, Texas
LDR radiation facilityVPT Rad, Chelmsford, MA
HDR dose rate50-300-rad(Si)/s
LDR dose rate10mrad(Si)/s
Irradiation and test temperatureAmbient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750
GUID-20231003-SS0I-DTVV-TZG6-T7CGM8M7JKJD-low.pngFigure 1-1 TPS7H2140-SEP Devices Used in Exposure (Front)
GUID-20230920-SS0I-VVF1-B5XR-JWZQFKBJTRTB-low.jpgFigure 1-2 TPS7H2140-SEP Devices Used in Exposure (Back)