SBOK079 October   2023 TPS7H2140-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14. 11References

5 Depth, Range, and LETEFF Calculation

GUID-20230927-SS0I-N6TN-RSV8-ZTDSLM2QBVKN-low.svgFigure 5-1 Generalized Cross-Section of the LBC8 Technology BEOL Stack on the TPS7H2140-SEP [Left] and SEUSS 2020 Application Used to Determine Key Ion Parameters [Right]

The TPS7H2140-SEP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of five levels of standard thickness aluminum metal on a 0.6-μm pitch. The total stack height from the surface of the passivation to the silicon surface is 5.46 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the TPS7H2140-SEP, the effective LET (LETEFF) at the surface of the silicon substrate, the depth, and the ion range was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). Table 5-1 lists the results.

Table 5-1 Krypton Ion LETEFF, Depth, and Range in Silicon
Ion TypeAngle of IncidenceDegrader Steps (Number)Degrader AngleRange in SiliconLETEFF (MeV·cm2/ mg)
109Ag00099.248