ZHCSIU8A September   2018  – December 2018 TVS2201

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      对 8/20µs 浪涌事件的电压钳位响应
      2.      功能方框图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings - JEDEC
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Protection Specifications
      2. 8.4.2 Reliability Testing
      3. 8.4.3 Zero Derating
      4. 8.4.4 Bidirectional Operation
      5. 8.4.5 Transient Performance
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ILEAK Leakage Current Measured at VIN = ±VRWM, TA = 27°C 2 27 nA
Measured at VIN = ±VRWM, TA = 85°C 330
VBR Break-down Voltage IIN = ±1mA 25.1 26.6 V
VCLAMP Clamp Voltage ±Ipp IEC 61000-4-5 Surge (8/20 µs), VIN = 0 V before surge, TA = 27°C 29.6 30.7 V
Max ±IPP IEC 61000-4-5 Surge (8/20 µs), VIN =±VRWM before surge, TA = 125°C 30.5 32.7
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at .5*IPP and IPP surge current, TA = 25°C 40 mΩ
CIN Input pin capacitance VIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND 62 pF
SR Maximum Slew Rate 0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 27°C 2.5 V/µs
0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 85°C 1.0