SCDS241B May   2008  – December 2016 TS5A9411

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: 5-V Supply
    6. 6.6 Electrical Characteristics: 3-V Supply
    7. 6.7 Electrical Characteristics: 2.5-V Supply
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage –0.3 6 V
Analog voltage(3) –0.3 VCC + 0.3 V
Digital input voltage –0.5 VCC + 0.3 V
Analog port diode current (VNC, VNO, VCOM < 0) –50 mA
Digital input clamp current (VI < 0) –50 mA
Continuous current through VCC 100 mA
Continuous current through GND –100 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) This value is limited to 5.5 V (maximum).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 2.25 5.5 V
VNO Analog voltage NC 0 VCC V
VNC NO 0 VCC
VCOM COM 0 VCC
VI Digital input voltage 0 5.5 V
ON-state switch current (VNO, VNC, VCOM = 0 to VCC) –50 50 mA
ON-state peak switch current (VNO, VNC, VCOM = 0 to VCC)(1) –200 200 mA
(1) Pulse at 1-ms duration < 10% duty cycle

6.4 Thermal Information

THERMAL METRIC(1) TS5A9411 UNIT
DCK (SOT)
12 PINS
RθJA Junction-to-ambient thermal resistance 346.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 163.7 °C/W
RθJB Junction-to-board thermal resistance 154.5 °C/W
ψJT Junction-to-top characterization parameter 17.4 °C/W
ψJB Junction-to-board characterization parameter 153.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics: 5-V Supply

VCC = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rON ON-state resistance VNO or VNC = 3 V, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 5.3 9 Ω
–40°C ≤ TA ≤ 85°C 10
ΔrON ON-state resistance match between channels VNO or VNC = 3 V, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 0.03 0.3 Ω
–40°C ≤ TA ≤ 85°C 0.3
rON(FLAT) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5		 2 Ω
INC(OFF), INO(OFF) NC, NO OFF leakage current VNC or VNO = 1 V and VCOM = 1 V to 4.5 V, or
VNC or VNO = 4.5 V and VCOM = 1 V;
VCC = 5.5 V, Switch OFF, see Figure 6		 TA = 25°C –500 500 pA
–40°C ≤ TA ≤ 85°C –3 3 nA
INC(ON), INO(ON) NC, NO ON leakage current VNC or VNO = 1 V and VCOM = 1 V, or
VNC or VNO = 4.5 V and VCOM = 4.5 V;
VCC = 5.5 V, Switch ON, see Figure 7		 TA = 25°C –500 500 pA
–40°C ≤ TA ≤ 85°C –3 3 nA
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 1 V or 4.5 V,
VCC = 5.5 V, Switch ON, see Figure 7		 TA = 25°C –500 500 pA
–40°C ≤ TA ≤ 85°C –3 3 nA
DIGITAL INPUT (IN)(1)
VIH Input logic high –40°C ≤ TA ≤ 85°C 4.5 V ≤ VCC ≤ 5.5 V 2.4 5.5 V
VCC = 4.5 V 2 5.5
VIL Input logic low 4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C 0 0.8 V
IIH, IIL Input leakage current VI = 5.5 V or 0, VCC = 5.5 V TA = 25°C –0.05 0.05 µA
–40°C ≤ TA ≤ 85°C –0.05 0.05
DYNAMIC
tON Turnon time VCOM = 3 V, RL = 300 Ω, CL = 35 pF, see Figure 9 VCC = 5 V, TA = 25°C 9 ns
4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C 10
tOFF Turnoff time VCOM = 3 V, RL = 300 Ω, CL = 35 pF, see Figure 9 VCC = 5 V, TA = 25°C 7 ns
4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C 7.5
tBBM Break-before-make time VNC = VNO = 3 V, RL = 300 Ω, CL = 35 pF, see Figure 10 TA = 25°C 1 ns
–40°C ≤ TA ≤ 85°C 0.9
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14 12.5 pC
CNC(OFF), CNO(OFF) NC, NO OFF capacitance VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 3.5 pF
CNC(ON), CNO(ON) NC, NO ON capacitance VNC or VNO = VCC or GND, f = 1 MHz, see Figure 8 8.5 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, f = 1 MHz, Switch ON, see Figure 8 8.5 pF
CI Digital input capacitance VI = VCC or GND, f = 1 MHz, see Figure 8 25 pF
BW Bandwidth RL = 50 Ω, Switch ON, see Figure 11 100 MHz
OISO OFF isolation RL = 50 Ω, CL = 5 pF, f = 1 MHz, Switch OFF, see Figure 12 –84 dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, Switch ON, see Figure 13 –85 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15 0.03%
SUPPLY
ICC Positive supply current VI = VCC or GND, VCC = 5.5 V, Switch ON or OFF TA = 25°C 0.01 µA
–40°C ≤ TA ≤ 85°C 0.5
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs (SCBA004).

6.6 Electrical Characteristics: 3-V Supply

VCC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rON ON-state resistance VNO or VNC = 1.5 V, VCC = 2.7 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 11.5 15 Ω
–40°C ≤ TA ≤ 85°C 20
ΔrON ON-state resistance match between channels VNO or VNC = 1.5 V, VCC = 2.7 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 0.05 0.3 Ω
–40°C ≤ TA ≤ 85°C 0.3
rON(FLAT) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, ICOM = –10 mA, Switch ON, see Figure 5 2 Ω
INC(OFF), INO(OFF) NC, NO OFF leakage current VNC or VNO = 1 V and VCOM = 1 V to 3 V, or
VNC or VNO = 3 V and VCOM = 1 V;
VCC = 3.3 V, Switch OFF, see Figure 6		 TA = 25°C –400 400 pA
–40°C ≤ TA ≤ 85°C –2 2 nA
INC(ON), INO(ON) NC, NO ON leakage current VNC or VNO = 1 V and VCOM = 1 V, or
VNC or VNO = 3 V and VCOM = 3 V;
VCC = 3.3 V, Switch ON, see Figure 7		 TA = 25°C –400 400 pA
–40°C ≤ TA ≤ 85°C –2 2 nA
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 1 V or 3 V,
VCC = 3.3 V, Switch ON, see Figure 7		 TA = 25°C –400 400 pA
–40°C ≤ TA ≤ 85°C –2 2 nA
DIGITAL INPUT (IN)(1)
VIH Input logic high –40°C ≤ TA ≤ 85°C 2 5.5 V
VIL Input logic low –40°C ≤ TA ≤ 85°C 0 0.8 V
IIH, IIL Input leakage current VI = 5.5 V or 0, VCC = 3.6 V TA = 25°C –0.05 0.05 µA
–40°C ≤ TA ≤ 85°C –0.05 0.05
DYNAMIC
tON Turnon time VCOM = 3 V, RL = 300 Ω,
CL = 35 pF, see Figure 9		 VCC = 3.3 V, TA = 25°C 13 ns
2.7 V ≤ VCC ≤ 3.3 V, –40°C ≤ TA ≤ 85°C 15
tOFF Turnoff time VCOM = 3 V, RL = 300 Ω,
CL = 35 pF, see Figure 9		 VCC = 3.3 V, TA = 25°C 7.5 ns
2.7 V ≤ VCC ≤ 3.3 V, –40°C ≤ TA ≤ 85°C 8.5
tBBM Break-before-make time VNC = VNO = 3 V, RL = 300 Ω, VCC = 3.3 V,
CL = 35 pF, see Figure 10		 TA = 25°C 1 ns
–40°C ≤ TA ≤ 85°C 0.9
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14 6 pC
CNC (OFF), CNO(OFF) NC, NO OFF capacitance VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 3.5 pF
CNC(ON), CNO(ON) NC, NO ON capacitance VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 8.5 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 8.5 pF
CI Digital input capacitance VI = VCC or GND, f = 1 MHz, see Figure 8 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON, see Figure 11 100 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, Switch OFF, see Figure 12 –84 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, Switch ON, see Figure 13 –85 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15 0.09%
SUPPLY
ICC Positive supply current VI = VCC or GND, VCC = 3.6 V, Switch ON or OFF TA = 25°C 0.01 µA
–40°C ≤ TA ≤ 85°C 0.5
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs (SCBA004).

6.7 Electrical Characteristics: 2.5-V Supply

VCC = 2.5 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rON ON-state resistance VNO or VNC = 1 V, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 15 25 Ω
–40°C ≤ TA ≤ 85°C 28
ΔrON ON-state resistance match between channels VNO or VNC = 1 V, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5		 TA = 25°C 0.06 0.3 Ω
–40°C ≤ TA ≤ 85°C 0.3
rON(FLAT) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5		 4 Ω
INC(OFF), INO(OFF) NC, NO OFF leakage current VNC or VNO = 1.5 V and VCOM = 0.5 V to 1.5 V, or
VNC or VNO = 1.5 V and VCOM = 1.5 V;
VCC = 2.75 V, Switch OFF, see Figure 6		 TA = 25°C –300 300 pA
–40°C ≤ TA ≤ 85°C –1 1 nA
INC(ON), INO(ON) NC, NO ON leakage current VNC or VNO = 1.5 V and VCOM = 0.5 V to 1.5 V, or
VNC or VNO = 1.5 V and VCOM = 1.5 V;
VCC = 2.75 V, Switch ON, see Figure 7		 TA = 25°C –300 300 pA
–40°C ≤ TA ≤ 85°C –1 1 nA
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 0.5 V or 1.5 V,
VCC = 2.75 V, Switch ON, see Figure 7		 TA = 25°C –300 300 pA
–40°C ≤ TA ≤ 85°C –1 1 nA
DIGITAL INPUT (IN)(1)
VIH Input logic high –40°C ≤ TA ≤ 85°C 2 5.5 V
VIL Input logic low –40°C ≤ TA ≤ 85°C 0 0.4 V
IIH, IIL Input leakage current VI = 5.5 V or 0 V, VCC = 2.75 V TA = 25°C –0.05 0.05 µA
–40°C ≤ TA ≤ 85°C –0.05 0.05
DYNAMIC
tON Turnon time VCOM = 2 V, RL = 300 Ω,
CL = 35 pF, see Figure 9		 VCC = 2.5 V, TA = 25°C 18 ns
2.25 V ≤ VCC ≤ 2.75 V,
–40°C ≤ TA ≤ 85°C		 20
tOFF Turnoff time VCOM = 2 V, RL = 300 Ω,
CL = 35 pF, see Figure 9		 VCC = 2.5 V, TA = 25°C 8 ns
2.25 V ≤ VCC ≤ 2.75 V,
–40°C ≤ TA ≤ 85°C		 9.5
tBBM Break-before-make time VNC = VNO = 2 V, RL = 300 Ω, CL = 35 pF, see Figure 10 TA = 25°C 1 ns
–40°C ≤ TA ≤ 85°C 0.9
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14 4.5 pC
CNC (OFF), CNO(OFF) NC, NO OFF capacitance VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 3.5 pF
CNC(ON), CNO(ON) NC, NO ON capacitance VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 8.5 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8 8.5 pF
Ci Digital input capacitance VI = VCC or GND, f = 1 MHz, see Figure 8 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON, see Figure 11 100 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, Switch OFF, see Figure 12 –84 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, Switch ON, see Figure 13 –84 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15 0.15%
SUPPLY
ICC Positive supply current VI = VCC or GND, VCC = 2.75 V, Switch ON or OFF TA = 25°C 0.01 µA
–40°C ≤ TA ≤ 85°C 0.5
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs (SCBA004).

6.8 Typical Characteristics

TS5A9411 grp1_cds241.gif
Figure 1. rON vs VCOM
TS5A9411 grp4_cds241.gif Figure 3. Crosstalk and Insertion Loss
vs Frequency (VCC = 3 V)
TS5A9411 grp3_cds241.gif Figure 2. Bandwidth (VCC = 3 V)
TS5A9411 grp5_cds241.gif Figure 4. Total Harmonic Distortion vs Frequency