ZHCSEM9 December   2015 TPS92691 , TPS92691-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Internal Regulator and Undervoltage Lockout (UVLO)
      2. 7.3.2  Oscillator
      3. 7.3.3  Gate Driver
      4. 7.3.4  Rail-to-Rail Current Sense Amplifier
      5. 7.3.5  Transconductance Error Amplifier
      6. 7.3.6  Switch Current Sense and Internal Slope Compensation
      7. 7.3.7  Analog Adjust Input
      8. 7.3.8  PWM Input and Series Dimming FET Gate Driver Output
      9. 7.3.9  Soft-Start
      10. 7.3.10 Current Monitor Output
      11. 7.3.11 Overvoltage Protection
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Duty Cycle Considerations
      2. 8.1.2  Inductor Selection
      3. 8.1.3  Output Capacitor Selection
      4. 8.1.4  Input Capacitor Selection
      5. 8.1.5  Main Power MOSFET Selection
      6. 8.1.6  Rectifier Diode Selection
      7. 8.1.7  LED Current Programming
      8. 8.1.8  Switch Current Sense Resistor and Slope Compensation
      9. 8.1.9  Feedback Compensation
      10. 8.1.10 Soft-Start
      11. 8.1.11 Overvoltage Protection
      12. 8.1.12 PWM Dimming Considerations
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Boost LED Driver
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Calculating Duty Cycle
          2. 8.2.1.2.2  Setting Switching Frequency
          3. 8.2.1.2.3  Inductor Selection
          4. 8.2.1.2.4  Output Capacitor Selection
          5. 8.2.1.2.5  Input Capacitor Selection
          6. 8.2.1.2.6  Main N-Channel MOSFET Selection
          7. 8.2.1.2.7  Rectifying Diode Selection
          8. 8.2.1.2.8  Programming LED Current
          9. 8.2.1.2.9  Setting Switch Current Limit and Slope Compensation
          10. 8.2.1.2.10 Deriving Compensator Parameters
          11. 8.2.1.2.11 Setting Start-up Duration
          12. 8.2.1.2.12 Setting Overvoltage Protection Threshold
          13. 8.2.1.2.13 PWM Dimming Considerations
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical Buck-Boost LED Driver
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1  Calculating Duty Cycle
          2. 8.2.2.2.2  Setting Switching Frequency
          3. 8.2.2.2.3  Inductor Selection
          4. 8.2.2.2.4  Output Capacitor Selection
          5. 8.2.2.2.5  Input Capacitor Selection
          6. 8.2.2.2.6  Main N-Channel MOSFET Selection
          7. 8.2.2.2.7  Rectifier Diode Selection
          8. 8.2.2.2.8  Setting Switch Current Limit and Slope Compensation
          9. 8.2.2.2.9  Programming LED Current
          10. 8.2.2.2.10 Deriving Compensator Parameters
          11. 8.2.2.2.11 Setting Startup Duration
          12. 8.2.2.2.12 Setting Overvoltage Protection Threshold
          13. 8.2.2.2.13 PWM Dimming Consideration
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Input voltage VIN, CSP, CSN –0.3 65 V
IADJ, IS, PWM, RT/SYNC –0.3 8.8 V
OVP, SS –0.3 5.5 V
CSP to CSN(3), PGND –0.3 0.3 V
Output voltage(4) VCC, GATE, DDRV –0.3 8.8 V
COMP –0.3 5.0 V
Source current IMON — 100 µA
GATE, DDRV (Pulsed <20 ns) — 500 mA
Sink current GATE, DDRV (Pulsed <20 ns) — 500 mA
Operating junction temperature, TJ –40 140 °C
Storage temperature, Tstg 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to AGND unless otherwise noted
(3) Continuous sustaining voltage
(4) All output pins are not specified to have an external voltage applied.

6.2 ESD Ratings

VALUE UNIT
TPS92691-Q1 IN PWP (HTSSOP) PACKAGE
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002, all pins(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins except 1, 8, 9, and 16 ±500
Pins 1, 8, 9, and 16 ±750
TPS92691 IN PWP (HTSSOP) PACKAGE
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(3) ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Supply input voltage 6.5 14 65 V
VIN, crank Supply input, battery crank voltage 4.5 V
VCSP, VCSN Current sense common mode 0 60 V
ƒSW Switching frequency 80 700 kHz
ƒSYNC SYNC frequency 0.8 × ƒsw 1.2 × ƒSW kHz
VIADJ Current reference voltage 0.14 VIADJ(CLAMP) V
TA Operating ambient temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS92691/-Q1 UNIT
PWP (HTSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 40.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 26.1 °C/W
RθJB Junction-to-board thermal resistance 22.2 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 22.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TJ = –40°C to 140°C, VIN = 14 V, VIADJ = 2.2 V, CVCC = 1 µF, CCOMP = 2.2 nF, RCS = 100 mΩ, RT = 20 kΩ, VPWM = 5 V, no load on GATE and DDRV (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE (VIN)
VDO LDO dropout voltage ICC = 20 mA, VIN = 5 V 300 mV
BIAS SUPPLY (VCC)
VCC(REG) Regulation voltage No load 7.0 7.5 8.0 V
VCC(UVLO) Supply undervoltage protection VCC rising threshold, VIN = 8 V 4.1 4.35 V
VCC falling threshold, VIN = 8 V 3.75 4.0 V
Hysteresis 100 mV
ICC(LIMIT) Supply current limit VCC = 0 V 26 38 46 mA
ICC(STBY) Supply stand-by current VPWM = 0 V 1.8 2.1 mA
ICC(SW) Supply switching current VCC = 7.5 V, CGATE = 1 nF 5.1 6.6 mA
OSCILLATOR (RT/SYNC)
ƒSW Switching frequency RT = 40 kΩ 165 200 230 kHz
RT = 20 kΩ 327 390 448 kHz
VRT RT output voltage 1 V
VSYNC SYNC rising threshold VRT/SYNC rising 2.7 3.1 V
SYNC falling threshold VRT/SYNC falling 1.8 2 V
tSYNC(MIN) Minimum SYNC clock pulse width 100 ns
GATE DRIVER (GATE)
RGH Gate driver high side resistance IGATE = –10 mA 5.4 11.2 Ω
RGL Gate driver low side resistance IGATE = 10 mA 4.3 10.5 Ω
CURRENT SENSE (IS)
VIS(LIMIT) Current limit threshold 497 525 550 mV
tIS(BLANK) Leading edge blanking time 103 150 188 ns
tIS(FAULT) Current limit fault time 35 µs
tILMT(DLY) IS to GATE propagation delay VIS pulsed from 0 to 1 V 100 ns
PWM COMPARATOR AND SLOPE COMPENSATION
DMAX Maximum duty cycle 90.4% 93% 94.7%
VLV IS to COMP level shift voltage No slope compensation added 1.17 1.5 1.8 V
VSL Slope compensation D = DMAX (with max slope compensation) 200 mV
ILV IS level shift bias current No slope compensation added 25 µA
ILV + ISL IS level shift source current D = DMAX (with max slope compensation) 115 µA
CURRENT SENSE AMPLIFIER (CSP, CSN)
VCS(offset) Cumulative offset voltage at VCSP = 60 V and V(CSP-CSN) = 150 mV, referred to current sense input –40°C ≤ TJ ≤ 140°C –5.2 5.9 mV
25°C ≤ TJ ≤ 140°C –4.4 4.6 mV
Cumulative offset voltage at VCSP = 60 V and V(CSP-CSN) = 10 mV, referred to current sense input –40°C ≤ TJ ≤ 140°C –3.5 5.0 mV
25°C ≤ TJ ≤ 140°C -2.8 4.0 mV
Cumulative offset voltage at VCSN = 0 V and V(CSP-CSN) = 150 mV, referred to current sense input –40°C ≤ TJ ≤ 140°C –5.9 6.7 mV
25°C ≤ TJ ≤ 140°C -4.7 5.0 mV
Cumulative offset voltage at VCSN = 0 V and V(CSP-CSN) = 10 mV, referred to current sense input –40°C ≤ TJ ≤ 140°C –2.3 3.2 mV
25°C ≤ TJ ≤ 140°C –1.7 2.6 mV
CS(BW) Current sense unity gain bandwidth 500 kHz
ICS(BIAS) CSP, CSN bias current VCSP, CSN = 60 V 4 µA
CURRENT MONITOR (IMON)
VIMON(CLP) IMON output voltage clamp 3.2 3.7 4.2 V
VIMON(OS) IMON buffer offset voltage –11.4 –1.6 7.3 mV
ANALOG ADJUST (IADJ)
VIADJ(CLP) IADJ internal clamp voltage IIADJ = 1 µA 2.27 2.42 2.55 V
IIADJ(BIAS) IADJ input bias current VIADJ < 2.2 V 90 nA
RIADJ(LMT) IADJ current limiting series resistor VIADJ > 2.6 V 12 kΩ
ERROR AMPLIFIER (COMP)
gM Transconductance 121 µA/V
ICOMP(SRC) COMP current source capacity VIADJ = 1.4 V, V(CSP-CSN) = 0 V 130 µA
ICOMP(SINK) COMP current sink capacity VIADJ = 0 V, V(CSP-CSN) = 0.1 V 130 µA
EA(BW) Error amplifier bandwidth –3 dB 5 MHz
VCOMP(RST) COMP pin reset voltage 100 mV
RCOMP(DCH) COMP discharge FET resistance 246 Ω
SOFT-START (SS)
ISS Soft-start source current 7 10 12.8 µA
VSS(RST) Soft-start pin reset voltage 25 mV
RSS(DCH) SS discharge FET resistance 260 Ω
OVERVOLTAGE PROTECTION (OVP)
VOVP(THR) OVP detection threshold 1.18 1.24 1.31 V
IOVP(HYS) OVP hysteresis current 12 20 27.5 µA
PWM INPUT (PWM)
VPWM(HIGH) Schmitt trigger logic level (high threshold) 2.5 2.7 V
VPWM(LOW) Schmitt trigger logic level (low threshold) 2.0 2.3 V
RPWM(PD) PWM pulldown resistance 1 MΩ
tDLY(RISE) PWM to DDRV rising delay 54 ns
tDLY(FALL) PWM to DDRV falling delay 72 ns
PWM GATE DRIVE OUTPUT (DDRV)
RDH DDRV high-side resistance 6.1 12.8 Ω
RDL DDRV low-side resistance 5.2 11.4 Ω
THERMAL SHUTDOWN
Thermal shutdown temperature 175 °C
Thermal shutdown hysteresis 25 °C
(1) All voltages are with respect to AGND unless otherwise noted

6.6 Typical Characteristics

TA = 25°C, VIN = 14 V, VIADJ = 2.2 V, CVCC = 1 µF, CCOMP = 2.2 nF, RCS = 100 mΩ, RT = 20 kΩ, VPWM = 5 V, no load on GATE and DDRV (unless otherwise noted)
TPS92691 TPS92691-Q1 D001_SLVSD68.gif
Figure 1. VCC Regulation Voltage vs Temperature
TPS92691 TPS92691-Q1 D002_SLVSD68.gif
Figure 3. VCC Dropout Voltage vs Temperature
TPS92691 TPS92691-Q1 D004_SLVSD68.gif
Figure 5. VCC Current Limit vs Temperature
TPS92691 TPS92691-Q1 D006_SLVSD68.gif
Figure 7. Switching Frequency vs Temperature
TPS92691 TPS92691-Q1 D007_SLVSD68.gif
Figure 9. IS Current Limit Threshold vs Temperature
TPS92691 TPS92691-Q1 D009_SLVSD68.gif
VIADJ = 2.1 V
Figure 11. V(CSP-CSN) Threshold vs VCSP
TPS92691 TPS92691-Q1 D013_SLVSD68.gif
Figure 13. CSP/CSN Input Bias Current vs Temperature
TPS92691 TPS92691-Q1 D014_SLVSD68.gif
Figure 15. V(CSP-CSN) Threshold vs VIADJ
TPS92691 TPS92691-Q1 D016_SLVSD68.gif
Figure 17. OVP Detection Threshold vs Temperature
TPS92691 TPS92691-Q1 D018_SLVSD68.gif
Figure 2. Standby Current vs Temperature
TPS92691 TPS92691-Q1 D003_SLVSD68.gif
Figure 4. UVLO Threshold vs Temperature
TPS92691 TPS92691-Q1 D005_SLVSD68.gif
Figure 6. RT vs Switching Frequency
TPS92691 TPS92691-Q1 D012_SLVSD68.gif
Figure 8. Maximum Duty Cycle vs Temperature
TPS92691 TPS92691-Q1 D008_SLVSD68.gif
Figure 10. Leading Edge Blanking Period vs Temperature
TPS92691 TPS92691-Q1 D010_SLVSD68.gif
VIADJ = 2.1 V
Figure 12. Current Sense Amplifier Offset vs Temperature
TPS92691 TPS92691-Q1 D011_SLVSD68.gif
Figure 14. VIMON vs V(CSP-CSN)
TPS92691 TPS92691-Q1 D015_SLVSD68.gif
Figure 16. VIADJ Voltage Clamp vs Temperature
TPS92691 TPS92691-Q1 D017_SLVSD68.gif
Figure 18. OVP Hysteresis Current vs Temperature