ZHCSHE2B September   2017  – June 2018 TPS7A52-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      为射频组件供电
      2.      输出电压噪声与频率和输出电压间的关系
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Regulation Features
        1. 7.3.1.1 DC Regulation
        2. 7.3.1.2 AC and Transient Response
      2. 7.3.2 System Start-Up Features
        1. 7.3.2.1 Programmable Soft Start (NR/SS Pin)
        2. 7.3.2.2 Internal Sequencing
          1. 7.3.2.2.1 Enable (EN)
          2. 7.3.2.2.2 Undervoltage Lockout (UVLO) Control
          3. 7.3.2.2.3 Active Discharge
        3. 7.3.2.3 Power-Good Output (PG)
      3. 7.3.3 Internal Protection Features
        1. 7.3.3.1 Foldback Current Limit (ICL)
        2. 7.3.3.2 Thermal Protection (Tsd)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Regulation
      2. 7.4.2 Disabled
      3. 7.4.3 Current Limit Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
        1. 8.1.1.1 Input and Output Capacitor Requirements (CIN and COUT)
        2. 8.1.1.2 Noise-Reduction and Soft-Start Capacitor (CNR/SS)
        3. 8.1.1.3 Feed-Forward Capacitor (CFF)
      2. 8.1.2  Soft-Start and Inrush Current
      3. 8.1.3  Optimizing Noise and PSRR
      4. 8.1.4  Charge Pump Noise
      5. 8.1.5  Current Sharing
      6. 8.1.6  Adjustable Operation
      7. 8.1.7  Power-Good Operation
      8. 8.1.8  Undervoltage Lockout (UVLO) Operation
      9. 8.1.9  Dropout Voltage (VDO)
      10. 8.1.10 Load Transient Response
      11. 8.1.11 Reverse Current Protection Considerations
      12. 8.1.12 Power Dissipation (PD)
      13. 8.1.13 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout
      2. 10.1.2 RTK Package—High CTE Mold Compound
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 参考设计
        3. 11.1.1.3 Spice 模型
      2. 11.1.2 器件命名规则
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.1 Absolute Maximum Ratings

over junction temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage IN, BIAS, PG, EN –0.3 7.0 V
IN, BIAS, PG, EN (5% duty cycle, pulse duration = 200 µs) –0.3 7.5
OUT(2) –0.3 VIN + 0.3
NR/SS, FB –0.3 3.6
Current OUT Internally limited A
PG (sink current into device) 5 mA
Temperature Operating junction, TJ –55 150 °C
Storage, Tstg –55 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The absolute maximum rating is VIN + 0.3 V or 7.0 V, whichever is smaller.