SLVSA76G March   2010  – January 2016 TPS65180B , TPS65181 , TPS65181B

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Data Transmission Timing
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Modes of Operation
      2. 9.3.2 Mode Transisitons
      3. 9.3.3 Wake-Up and Power Up Sequencing
      4. 9.3.4 GPIO Control
      5. 9.3.5 I2C Control
    4. 9.4 Device Functional Modes
      1. 9.4.1 The FIX_RD_PTR Bit
    5. 9.5 Register Maps
      1. 9.5.1  Thermistor Readout (TMST_VALUE) Register (Offset = 0x00h)
      2. 9.5.2  Enable (ENABLE) Register (Offset = 0x01h)
      3. 9.5.3  Positive Voltage Rail Adjustment (VP_ADJUST) Register (Offset = 0x02h)
      4. 9.5.4  Negative Voltage Rail Adjustment (VN_ADJUST) Register (Offset = 0x03h)
      5. 9.5.5  VCOM Adjustment (VCOM_ADJUST) Register (Offset = 0x04h)
      6. 9.5.6  Interrupt Enable 1 (INT_ENABLE1) Register (Offset = 0x05h)
      7. 9.5.7  Interrupt Enable 2 (INT_ENABLE2) Register (Offset = 0x06h)
      8. 9.5.8  Interrupt INT_STATUS1 (INT_STATUS1) Register (Offset = 0x07h)
      9. 9.5.9  Interrupt Status 2 (INT_STATUS2) Register (Offset = 0x08h)
      10. 9.5.10 Power Sequence Register 0 (PWR_SEQ0) Register (Offset = 0x09h)
      11. 9.5.11 Power Sequence Register 1 (PWR_SEQ1) Register (Offset = 0x0Ah)
      12. 9.5.12 Power Sequence Register 2 (PWR_SEQ2) Register (Offset = 0x0Bh)
      13. 9.5.13 Thermistor Configuration Register (TMST_CONFIG) (Offset = 0x0Ch)
      14. 9.5.14 Thermistor Hot Threshold (TMST_OS) Register (Offset = 0x0Dh)
      15. 9.5.15 Thermistor Cool Threshold (TMST_HYST) Register (Offset = 0x0Eh)
      16. 9.5.16 Power-Good Status (PG_STATUS) Register (Offset = 0x0Fh)
      17. 9.5.17 Revision and Version Control (REVID) Register (Offset = 0x10h)
      18. 9.5.18 I2C Read Pointer Control (FIX_READ_POINTER) Register (Offset = 0x11h) (TPS65181 and TPS65181B ONLY)
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1  Dependencies Between Rails
      2. 10.1.2  Soft-Start
      3. 10.1.3  VCOM Adjustment
      4. 10.1.4  VCOM Adjustment Through Register Control
      5. 10.1.5  VCOM Adjustment Through External Potentiometer
      6. 10.1.6  VPOS and VNEG Supply Tracking
      7. 10.1.7  Fault Handling and Recovery
      8. 10.1.8  TPS65180 and TPS65180B Fault Handling
      9. 10.1.9  TPS65181 and TPS65181B Fault Handling
      10. 10.1.10 Power-Good Pin
      11. 10.1.11 Interrupt Pin
      12. 10.1.12 Panel Temperature Monitoring
      13. 10.1.13 NTC Bias Circuit
      14. 10.1.14 TPS65180 and TPS65180B Temperature Acquisition
      15. 10.1.15 TPS65181 and TPS65181B Temperature Acquisition
      16. 10.1.16 Overtemperature Reporting
      17. 10.1.17 Overtemperature Fault Queuing
      18. 10.1.18 TPS65181 and TPS65181B Temperature Sensor
      19. 10.1.19 I2C Bus Operation
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Related Links
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Input voltage at VIN, VINP, VIN3P3 –0.3 7 V
Ground pins to system ground –0.3 0.3 V
Voltage range at SDA, SCL, WAKEUP, PWR3, PWR2, PWR1, PWR0, VCOM_CTRL, VDDH_FB, VEE_FB, PWR_GOOD, nINT –0.3 3.6 V
VCOM_XADJ –3.6 0.3 V
Voltage on VB, VB_SW, VPOS_IN, VDDH_IN –0.3 20 V
Voltage on VN, VNEG_IN, VEE_IN, VCOM_PWR –20 0.3 V
Voltage from VINP to VN_SW –0.3 30 V
Peak output current Internally limited mA
Continuous total power dissipation 2 W
TJ Operating junction temperature –10 125 °C
TA Operating ambient temperature(3) –10 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) TI recommends that copper plane in proper size on board be in contact with die thermal pad to dissipate heat efficiently. Thermal pad is electrically connected to PBKG, which is supposed to be tied to the output of buck-boost converter. Thus wide copper trace in the buck-boost output helps heat dissipated efficiently.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage at VIN, VINP, VIN3P3 3 3.7 6 V
Voltage at SDA, SCL, WAKEUP, PWR3, PWR2, PWR1, PWR0, VCOM_CTRL, VDDH_FB, VEE_FB, VCOM_XADJ, PWR_GOOD, nINT 0 3.6 V
TA Operating ambient temperature –10 85 °C
TJ Operating junction temperature –10 125 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS6518x
TPS6518xB		 UNIT
RGZ (VQFN)
48 PINS
RθJA Junction-to-ambient thermal resistance (2) 30.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.2 °C/W
RθJB Junction-to-board thermal resistance 7.1 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 7.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) Estimated when mounted on high K JEDEC board per JESD 51-7 with thickness of 1.6 mm, 4 layers, size of 76.2 mm × 114.3 mm, and 2-oz. copper for top and bottom plane. Actual thermal impedance depends on PCB used in the application.

8.5 Electrical Characteristics

VIN = 3.7 V, TA = –10°C to 85ºC, Typical values are at TA = 25ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE
VIN Input voltage range 3 3.7 6 V
VUVLO Undervoltage lockout threshold VIN falling 2.9 V
VHYS Undervoltage lockout hysteresis VIN rising 400 mV
INPUT CURRENT
IQ Operating quiescent current into VIN Device switching, no load 5.5 mA
ISTD Operating quiescent current into VIN Device in standby mode 130 µA
ISLEEP Shutdown current Device in sleep mode 2.8 10 µA
INTERNAL SUPPLIES
VINT_LDO1 Internal supply 2.7 V
VINT_LDO2 Internal supply 2.7 V
VREF Internal supply 2.25 V
DCDC1 (POSITIVE BOOST REGULATOR)
VIN Input voltage range 3 3.7 6 V
VOUT Output voltage range 17 V
DC set tolerance –5% 5%
IOUT Output current 160 mA
RDS(ON) MOSFET on resistance VIN = 3.7 V 350 mΩ
ILIMIT Switch current limit 1.5 A
Switch current accuracy –30% 30%
fSW Switching frequency 1 MHz
L Inductor 2.2 µH
C Capacitor 2 × 4.7 µF
ESR Capacitor ESR 20 mΩ
DCDC2 (INVERTING BUCK-BOOST REGULATOR)
VIN Input voltage range 3 3.7 6 V
VOUT Output voltage range –17 V
DC set tolerance –5% 5%
IOUT Output current 160 mA
RDS(ON) MOSFET on resistance VIN = 3.7 V 350 mΩ
ILIMIT Switch current limit 1.5  A
Switch current accuracy –30% 30%
L Inductor 4.7 µH
C Capacitor 2 × 4.7 µF
ESR Capacitor ESR 20 mΩ
LDO1 (VPOS)
VPOS_IN Input voltage range 16.15 17 17.85 V
VSET Output voltage set value VIN = 17 V,
VPOS_SET[2:0] = 0x0h to 0x7h		 14.25 15 15.75 V
VINTERVAL Output voltage set resolution VIN = 17 V 250 mV
VPOS_OUT Output voltage range VSET = 15 V, ILOAD = 20 mA 14.85 15 15.15 V
VOUTTOL Output tolerance VSET = 15 V, ILOAD = 20 mA –1% 1%
VDROPOUT Dropout voltage ILOAD = 120 mA 250 mV
VLOADREG Load regulation – DC ILOAD = 10% to 90% 1%
ILOAD Load current range 120 mA
ILIMIT Output current limit 200 mA
TSS Soft-start time 1 ms
C Recommended output capacitor 4.7 µF
LDO2 (VNEG)
VNEG_IN Input voltage range –17.85 –17 –16.15 V
VSET Output voltage set value VIN = –17 V,
VNEG_SET[2:0] = 0x0h to 0x7h		 –15.75 –15 –14.25 V
VINTERVAL Output voltage set resolution VIN = –17 V 250 mV
VNEG_OUT Output voltage range VSET = –15 V, ILOAD = –20 mA –15.15 –15 –14.85 V
VOUTTOL Output tolerance VSET = –15 V, ILOAD = –20 mA –1% 1%
VDROPOUT Dropout voltage ILOAD = 120 mA 250 mV
VLOADREG Load regulation – DC ILOAD = 10% to 90% 1%
ILOAD Load current range 120 mA
ILIMIT Output current limit 200 mA
TSS Soft-start time 1 ms
C Recommended output capacitor 4.7 µF
LD01 (POS) AND LDO2 (VNEG) TRACKING
VDIFF Difference between VPOS and VNEG VSET = ±15 V,
ILOAD = ±20 mA, 0°C to 60°C		 –50 50 mV
VCOM DRIVER
VCOM Accuracy VCOM_SET[7:0] = 0x74h (–1.25 V)
VIN = 3.4 V to 4.2 V, no load		 –0.8% 0.8%
VCOM_SET[7:0] = 0x74h (–1.25 V)
VIN = 3.0 V to 6.0 V, no load		 –1.5% 1.5%
Output voltage range –2.5 –0.3 V
Resolution VCOM_ADJ = 1 V, 1 LSB 11 17 mV
G VCOM gain (VCOM_XADJ/VCOM) VCOM_ADJ = 0 V 1 V/V
VCOM SWITCH
TON Switch ON-time  VCOM = –1.25 V, VCOM_PANEL = 0 V
CVCOM = 4.7 µF, CVCOM_PANEL = 4.7 µF		 1 ms
RDS(ON) MOSFET ON-resistance VCOM = –1.245 V, ICOM = 30 mA 20 35 Ω
ILIMIT MOSFET current limit Not tested in production 200 mA
ISWLEAK Switch leakage current VCOM = 0 V,
VCOM_PANEL = –2.5 V		 8.3 nA
VIN3P3 TO V3P3 SWITCH
RDS(ON) MOSFET ON-resistance VIN3P3 = 3.3 V, ID = 2 mA 50 Ω
CP1 (VDDH) CHARGE PUMP
VDDH_IN Input voltage range 16.15 17 17.85 V
VFB Feedback voltage 1 V
Accuracy –3% 3%
VDDH_OUT Output voltage range VSET = 22 V, ILOAD = 2 mA 21 22 23 V
ILOAD Load current range 10 mA
fSW Switching frequency 560 KHz
CD Recommended driver capacitor 10 nF
CO Recommended output capacitor 4.7 µF
CP2 (VEE) NEGATIVE CHARGE PUMP
VEE_IN Input voltage range –17.75 –17 –16.15 V
VFB Feedback voltage –1 V
Accuracy –3% 3%
VEE_OUT Output voltage range VSET = –20 V, ILOAD = 3 mA –21 –20 –19 V
ILOAD Load current range 12 mA
fSW Switching frequency 560 KHz
CD Recommended driver capacitor 10 nF
CO Recommended output capacitor 4.7 µF
THERMISTOR MONITOR(1)
ATMS Temperature to voltage ratio Not tested in production –0.0158 V/°C
OffsetTMS Offset Temperature = 0°C 1.575 V
VTMS_HOT Temp hot trip voltage (T = 50°C) TEMP_HOT_SET = 0x8C 0.768 V
VTMS_COOL Temp hot escape voltage (T = 45°C) TEMP_COOL_SET = 0x82 0.845 V
VTMS_MAX Maximum input level 2.25 V
RNTC_PU Internal pullup resistor 7.307 KΩ
RLINEAR External linearization resistor 43 KΩ
ADCRES ADC resolution Not tested in production, 1 bit 8.75 mV
ADCDEL ADC conversion time Not tested in production 19 µs
TMSTTOL Accuracy Not tested in production –2 2 LSB
LOGIC LEVELS AND TIMING CHARTERISTICS (SCL, SDA, nINT, PWR_GOOD, PWRx, WAKEUP)
VOL Output low threshold level IO = 3 mA, sink current
(SDA, nINT, PWR_GOOD)		 0.4 V
VIL Input low threshold level 0.4 V
VIH Input high threshold level 1.2 V
I(bias) Input bias current VIO = 1.8 V 1 µA
tlow,WAKEUP WAKEUP low time minimum low time for WAKEUP pin 150 ms
fSCL SCL clock frequency 400 KHz
OSCILLATOR
fOSC Oscillator frequency 9 MHz
Frequency accuracy TA = –40°C to 85°C –10% 10%
THERMAL SHUTDOWN
TSHTDWN Thermal trip point 150 °C
Thermal hysteresis 20 °C
(1) 10-kΩ Murata NCP18XH103F03RB thermistor (1%) in parallel with a linearization resistor (43 kΩ, 1%) are used at TS pin for panel temperature measurement.

8.6 Data Transmission Timing

VBAT = 3.6 V ±5%, TA = 25ºC, CL = 100 pF (unless otherwise noted)
MIN NOM MAX UNIT
f(SCL) Serial clock frequency 100 400 KHz
tHD;STA Hold time (repeated) START condition. After this period, the first clock pulse is generated. SCL = 100 KHz 4 µs
SCL = 400 KHz 600 ns
tLOW LOW period of the SCL clock SCL = 100 KHz 4.7 µs
SCL = 400 KHz 1.3
tHIGH HIGH period of the SCL clock SCL = 100 KHz 4 µs
SCL = 400 KHz 600 ns
tSU;STA Set-up time for a repeated START condition SCL = 100 KHz 4.7 µs
SCL = 400 KHz 600 ns
tHD;DAT Data hold time SCL = 100 KHz 0 3.45 µs
SCL = 400 KHz 0 900 ns
tSU;DAT Data set-up time SCL = 100 KHz 250 ns
SCL = 400 KHz 100
tr Rise time of both SDA and SCL signals SCL = 100 KHz 1000 ns
SCL = 400 KHz 300
tf Fall time of both SDA and SCL signals SCL = 100 KHz 300 ns
SCL = 400 KHz 300
tSU;STO Set-up time for STOP condition SCL = 100 KHz 4 µs
SCL = 400 KHz 600 ns
tBUF Bus free time between stop and start condition SCL = 100 KHz 4.7 µs
SCL = 400 KHz 1.3
tSP Pulse width of spikes which mst be suppressed by the input filter SCL = 100 KHz n/a n/a ns
SCL = 400 KHz 0 50

8.7 Typical Characteristics

TPS65180 TPS65181 TPS65180B TPS65181B C002_SLVSAA2.png Figure 1. Efficiency vs Load Current
TPS65180 TPS65181 TPS65180B TPS65181B C007_SLVSAA2.png Figure 2. Load Current vs Efficiency