SLVS576B SEPTEMBER   2005  – January 2016 TPS65150

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Converter
        1. 7.3.1.1 Setting the Boost Converter Output Voltage
        2. 7.3.1.2 Boost Converter Rectifier Diode
        3. 7.3.1.3 Choosing the Boost Converter Output Capacitance
        4. 7.3.1.4 Compensation
        5. 7.3.1.5 Soft Start
        6. 7.3.1.6 Gate Drive Signal
      2. 7.3.2 Negative Charge Pump
        1. 7.3.2.1 Negative Charge Pump Output Voltage
        2. 7.3.2.2 Negative Charge Pump Flying Capacitance
        3. 7.3.2.3 Negative Charge Pump Output Capacitance
        4. 7.3.2.4 Negative Charge Pump Diodes
      3. 7.3.3 Positive Charge Pump
        1. 7.3.3.1 Positive Charge Pump Output Voltage
        2. 7.3.3.2 Positive Charge Pump Flying Capacitance
        3. 7.3.3.3 Positive Charge Pump Output Capacitance
        4. 7.3.3.4 Positive Charge Pump Diodes
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Power-On Sequencing, DLY1, DLY2
      6. 7.3.6 Gate Voltage Shaping
      7. 7.3.7 VCOM Buffer
      8. 7.3.8 Protection
        1. 7.3.8.1 Boost Converter Overvoltage Protection
        2. 7.3.8.2 Adjustable Fault Delay
        3. 7.3.8.3 Thermal Shutdown
        4. 7.3.8.4 Undervoltage Lockout
    4. 7.4 Device Functional Modes
      1. 7.4.1 VI > VIT+
      2. 7.4.2 VI < VIT-
      3. 7.4.3 Fault Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Boost Converter Design Procedure
          1. 8.2.2.1.1 Inductor Selection
        2. 8.2.2.2  Rectifier Diode Selection
        3. 8.2.2.3  Setting the Output Voltage
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Compensation
        7. 8.2.2.7  Negative Charge Pump
          1. 8.2.2.7.1 Choosing the Output Capacitance
          2. 8.2.2.7.2 Choosing the Flying Capacitance
          3. 8.2.2.7.3 Choosing the Feedback Resistors
          4. 8.2.2.7.4 Choosing the Diodes
        8. 8.2.2.8  Positive Charge Pump
          1. 8.2.2.8.1 Choosing the Flying Capacitance
          2. 8.2.2.8.2 Choosing the Output Capacitance
          3. 8.2.2.8.3 Choosing the Feedback Resistors
          4. 8.2.2.8.4 Choosing the Diodes
        9. 8.2.2.9  Gate Voltage Shaping
        10. 8.2.2.10 Power-On Sequencing
        11. 8.2.2.11 Fault Delay
        12. 8.2.2.12 Undervoltage Lockout Function
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGE|24
  • PWP|24
散热焊盘机械数据 (封装 | 引脚)
订购信息

Device and Documentation Support

Device Support

Third-Party Products Disclaimer

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Community Resources

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All other trademarks are the property of their respective owners.

Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.