SLVS417F March 2002 – June 2015 TPS62200 , TPS62201 , TPS62202 , TPS62203 , TPS62204 , TPS62205 , TPS62207 , TPS62208
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VI | Supply voltages(2) | –0.3 | 7.0 | V |
Voltages on pins SW, EN, FB (2) | –0.3 | VCC +0.3 | V | |
PD | Continuous power dissipation | See Thermal Information | ||
TJ | Operating junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VI | Supply voltage | 2.5 | 6.0 | V | |
VO | Output voltage for adjustable output voltage version | 0.7 | VI | V | |
IO | Output current | 300 | mA | ||
L | Inductor(1) | 4.7 | 10 | µH | |
CI | Input capacitor(1) | 4.7 | µF | ||
CO | Output capacitor(1) | 10 | µF | ||
TA | Operating ambient temperature | 40 | 85 | °C | |
TJ | Operating junction temperature | 40 | 125 | °C |
THERMAL METRIC(1) | TPS6220x | UNIT | |
---|---|---|---|
DBV [SOT-23] | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 220 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 125 | °C/W |
RθJB | Junction-to-board thermal resistance | 36 | °C/W |
ψJT | Junction-to-top characterization parameter | 14 | °C/W |
ψJB | Junction-to-board characterization parameter | 35 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VI | Input voltage | 2.5 | 6 | V | |||
IQ | Operating quiescent current | IO = 0 mA, Device is not switching | 15 | 30 | µA | ||
Shutdown supply current | EN = GND | 0.1 | 1 | µA | |||
Undervoltage lockout threshold | 1.5 | 2 | V | ||||
ENABLE | |||||||
V(EN) | EN high level input voltage | 1.3 | V | ||||
EN low level input voltage | 0.4 | V | |||||
I(EN) | EN input bias current | EN = GND or VIN | 0.01 | 0.1 | µA | ||
POWER SWITCH | |||||||
rds(ON) | P-channel MOSFET on-resistance | VIN = VGS = 3.6 V | 530 | 690 | mΩ | ||
VIN = VGS = 2.5 V | 670 | 850 | |||||
N-channel MOSFET on-resistance | VIN = VGS = 3.6 V | 430 | 540 | mΩ | |||
VIN = VGS = 2.5 V | 530 | 660 | |||||
Ilkg_(P) | P-channel leakage current | VDS = 6.0 V | 0.1 | 1 | µA | ||
Ilkg_(N) | N-channel leakage current | VDS = 6.0 V | 0.1 | 1 | µA | ||
I(LIM) | P-channel current limit | 2.5 V < Vin < 6.0 V | 380 | 480 | 670 | mA | |
OSCILLATOR | |||||||
fS | Switching frequency | 650 | 1000 | 1500 | kHz | ||
OUTPUT | |||||||
VO | Adjustable output voltage | TPS62200 | 0.7 | VIN | V | ||
Vref | Reference voltage | 0.5 | V | ||||
Feedback voltage (1) | TPS62200 | VI = 3.6 V to 6 V, IO = 0 mA | 0% | 3% | |||
Adjustable | VI = 3.6 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
VO | Fixed output voltage(1) | TPS62207 | VI = 2.5 V to 6 V, IO = 0 mA | 0% | 3% | ||
1.2 V | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62201 | VI = 2.5 V to 6 V, IO = 0 mA | 0% | 3% | ||||
1.5 V | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62204 | VI = 2.5 V to 6 V, IO = 0 mA | 0% | 3% | ||||
1.6 V | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62202 | VI = 2.5 V to 6 V, IO = 0 mA | 0% | 3% | ||||
1.8 V | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62208 | VI = 2.5 V to 6 V, IO = 0 mA | 0% | 3% | ||||
1.875 V | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62205 | VI = 2.7 V to 6 V, IO = 0 mA | 0% | 3% | ||||
2.5 V | VI = 2.7 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
TPS62203 | VI = 3.6 V to 6 V, IO = 0 mA | 0% | 3% | ||||
3.3 V | VI = 3.6 V to 6 V, 0 mA ≤ IO ≤ 300 mA | –3% | 3% | ||||
Line regulation | VI = 2.5 V to 6 V, IO = 10 mA | 0.26 | %/V | ||||
Load regulation | IO = 100 mA to 300 mA | 0.0014 | %/mA | ||||
Ilkg | Leakage current into SW pin | Vin > Vout, 0 V ≤ Vsw ≤ Vin | 0.1 | 1 | µA | ||
Ilkg(Rev) | Reverse leakage current into pin SW | Vin = open, EN = GND, VSW = 6 V | 0.1 | 1 | µA |
FIGURES | |||
---|---|---|---|
η | Efficiency | vs Load current | Figure 6, Figure 7, Figure 8 |
vs Input voltage | Figure 9 | ||
IQ | No load quiescent current | vs Input voltage | Figure 1 |
fs | Switching frequency | vs Temperature | Figure 10 |
Vo | Output voltage | vs Output current | Figure 11 |
rds(on) | rds(on) - P-channel switch, | vs Input voltage | Figure 2 |
rds(on) - N-channel rectifier switch | vs Input voltage | Figure 3 | |
Line transient response | Figure 12 | ||
Load transient response | Figure 13 | ||
Power save mode operation | Figure 14 | ||
Start-up | Figure 15 |