ZHCSH71A September   2017  – December 2017 TPS62097-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Terminal Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommend Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 100% Duty Cycle Mode
      2. 7.3.2 Switch Current Limit and Hiccup Short Circuit Protection
      3. 7.3.3 Under Voltage Lockout (UVLO)
      4. 7.3.4 Thermal Shutdown
    4. 7.4 Device Function Modes
      1. 7.4.1 Enable and Disable (EN)
      2. 7.4.2 Power Save Mode and Forced PWM Mode (MODE)
      3. 7.4.3 Soft Startup (SS/TR)
      4. 7.4.4 Voltage Tracking (SS/TR)
      5. 7.4.5 Power Good (PG)
  8. 8 Application Information
    1. 8.1 Application Information
    2. 8.2 1.8-V Output Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Output Voltage
        2. 8.2.2.2 Output Filter Design
        3. 8.2.2.3 Inductor Selection
        4. 8.2.2.4 Capacitor Selection
      3. 8.2.3 Application Performance Curves
  9. 9 Power Supply Recommendations
  10. 10PCB Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Information
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGT|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Voltage at Pins(2) AVIN, PVIN, EN, VOS, PG –0.3 6.0 V
MODE, SS/TR, SW (DC) –0.3 VIN+0.3V
FB –0.3 3.0
SW (AC, less than 100ns)(3) -3 11
Sink current PG 0 1.0 mA
Temperature Operating Junction, TJ -40 150 °C
Storage, Tstg –65 150
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) While switching.

6.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V
Charged-device model (CDM), per AEC Q100-011(1) ±1500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommend Operating Conditions

MIN MAX UNIT
VIN Input voltage range 2.5 6.0 V
VPG Pull-up resistor voltage 0 6.0 V
VOUT Output voltage range 0.8 VIN V
IOUT Output current range 0 2.0 A
TJ Operating junction temperature -40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS62097-Q1WRGT UNITS
RθJA Junction-to-ambient thermal resistance 44.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.7 °C/W
RθJB Junction-to-board thermal resistance 19.3 °C/W
ψJT Junction-to-top characterization parameter 1.1 °C/W
ψJB Junction-to-board characterization parameter 19.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.6 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953

6.5 Electrical Characteristics

TJ = -40°C to 125°C, and VIN = 2.5V to 6.0V. Typical values are at TJ = 25°C and VIN = 3.6V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Quiescent current into AVIN, PVIN EN = High, Device not switching, TJ = –40°C to 85°C 40 57 µA
EN = High, Device not switching 40 65
ISD Shutdown current into AVIN, PVIN EN = Low, TJ = –40°C to 85°C 0.7 3 µA
EN = Low 0.7 10
VUVLO Under voltage lock out threshold VIN falling 2.2 2.3 2.4 V
VIN rising 2.3 2.4 2.5
TQ JSD Thermal shutdown threshold TJ rising 160 °C
Thermal shutdown hysteresis TJ falling 20 °C
LOGIC INTERFACE (EN, MODE)
VH_EN High-level input voltage, EN pin 1.6 2.0 V
VL_EN Low-level input voltage, EN pin 1.0 1.3 V
IEN,LKG Input leakage current into EN pin EN = High 0.01 0.9 µA
RPD Pull-down resistance at EN pin EN = Low 375 kΩ
VH_MO High-level input voltage, MODE pin 1.2 V
VL_MO Low-level input voltage, MODE pin 0.4 V
IMO,LKG Input leakage current into MODE pin MODE = High 0.01 0.16 µA
SOFT STARTUP, POWER GOOD (SS/TR, PG)
ISS Soft startup current 5.5 7.5 9.5 µA
Voltage tracking gain factor VFB / VSS/TR 1
VPG Power good threshold VOUT rising, referenced to VOUT nominal 92 95 98 %
VOUT falling, referenced to VOUT nominal 87 90 92
VPG,OL Low-level output voltage, PG pin Isink = 1mA 0.4 V
IPG,LKG Input leakage current into PG pin VPG = 5.0V 0.01 1.6 µA
OUTPUT
VOUT Output voltage accuracy
TPS6209733Q		 PWM mode, No load –1.0 1.0 %
PSM mode(1) –1.0 2.1
VFB Feedback reference voltage PWM mode 792 800 808 mV
PSM mode(1) 792 800 817
IFB,LKG Input leakage current into FB pin VFB = 0.8V 0.01 0.1 µA
RDIS Output discharge resistor EN = Low, VOUT = 1.8V 165 Ω
Line regulation IOUT = 0.5A, VOUT = 1.8V(1) 0.02 %/V
Load regulation PWM mode, VOUT = 1.8V (1) 0.2 %/A
POWER SWITCH
RDS(on) High-side FET on-resistance ISW = 500mA, VIN = 5.0V 42 mΩ
ISW = 500mA, VIN = 3.6V 53
Low-side FET on-resistance ISW = 500mA, VIN = 5.0V 40 mΩ
ISW = 500mA, VIN = 3.6V 50
ILIMF High-side FET forward current limit 3.1 3.6 4.2 A
VIN = 5.0V 3.3 3.6 3.9
ILIMN Low-side FET negative current limit Forced PWM mode –1.25 –1.1 -0.7 A
(1) Conditions: L = 1μH, COUT = 22μF, Switching Frequency = 2.0MHz

6.6 Typical Characteristics

TPS62097-Q1 D014_SLVSDZ7_TPS62097Q.gif Figure 1. High-Side FET On-Resistance
TPS62097-Q1 D015_SLVSDZ7_TPS62097Q.gif Figure 2. Low-Side FET On-Resistance