ZHCSJE4B September   2017  – February 2019 TPS61085A-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft Start
      2. 7.3.2 Frequency Select Pin (FREQ)
      3. 7.3.3 Undervoltage Lockout (UVLO)
      4. 7.3.4 Thermal Shutdown
      5. 7.3.5 Overvoltage Prevention
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Rectifier Diode Selection
        3. 8.2.2.3 Setting the Output Voltage
        4. 8.2.2.4 Compensation (COMP)
        5. 8.2.2.5 Input Capacitor Selection
        6. 8.2.2.6 Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

VIN = 3.3 V, EN = IN, VS = 12 V, TA = –40°C to +105°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage 2.3 6 V
IQ Operating quiescent current into IN Device not switching, VFB = 1.3 V 70 100 µA
ISDVIN Shutdown current into IN EN = GND 1 µA
UVLO Undervoltage lockout threshold VIN falling 2.2 V
VIN rising 2.3
TSD Thermal shutdown Temperature rising, TJ 150 °C
TSD(HYS) Thermal shutdown hysteresis 14 °C
LOGIC SIGNALS EN, FREQ
VIH High level input voltage VIN = 2.3 V to 6 V 2 V
VIL Low level input voltage VIN = 2.3 V to 6 V 0.5 V
Ilkg Input leakage current EN = FREQ = GND 0.1 µA
BOOST CONVERTER
VS Boost output voltage VIN + 0.5 18.5 V
VFB Feedback regulation voltage 1.230 1.238 1.246 V
gm Transconductance error amplifier 107 µA/V
IFB Feedback input bias current VFB = 1.238 V 0.1 µA
RDS(on) N-channel MOSFET ON-resistance VIN = VGS = 5 V, ISW = current limit 0.13 0.2 Ω
VIN = VGS = 3.3 V, ISW = current limit 0.15 0.24
Ilkg SW leakage current EN = GND, VSW = 6 V 2 µA
ILIM N-channel MOSFET current limit 2 2.6 3.2 A
ISS Soft-start current VSS = 1.238 V 7 10 13 µA
fosc Oscillator frequency FREQ = high 0.9 1.2 1.5 MHz
FREQ = low 480 650 820 kHz
Line regulation VIN = 2.3 V to 6 V, IOUT = 10 mA 0.0002 %/V
Load regulation VIN = 3.3 V, IOUT = 1 mA to 400 mA 0.11 %/A