SLVS363G August 2001 – September 2016 TPS3103 , TPS3106 , TPS3110
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage(2) | VDD | –0.3 | 4 | V |
MR Pin, RESET (push-pull) | VMR, VRESET (push-pull) | –0.3 | VDD + 0.3 | V |
All other pins(2) | –0.3 | 4 | V | |
Maximum low output current | IOL | –5 | 5 | mA |
Maximum high output current | IOH | –5 | 5 | mA |
Input current | IIK (VSENSE < 0 V or VSENSE > VDD) | –10 | 10 | mA |
Output current | IOK (VO < 0 V or VO > VDD)(3) | –10 | 10 | mA |
Continuous total power dissipation | See Thermal Information | |||
Temperature | Operating, TJ | –40 | 125 | °C |
Storage, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDD(1) | Supply voltage | 0.9 | 3.6 | V | |
VSENSE | SENSE voltage | 0 | VDD | V | |
WDI | High-level input voltage VIH at MR | 0.7 × VDD | V | ||
WDI | Low-level input voltage VIL at MR | 0.3 × VDD | V | ||
WDI | Input transition rise and fall rate at Δt/ΔV at MR | 100 | ns/V | ||
MR | MR voltage | 0 | VDD | V | |
PFI | PFI voltage | 0 | 3.6 | V | |
TJ | Operating temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS31xx | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 183.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 123.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 29.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 20.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 29 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOH | High-level output voltage | VDD = 3.3 V, IOH = –3 mA | 0.8 × VDD | V | |||
VDD = 1.8 V, IOH = –2 mA | |||||||
VDD = 1.5 V, IOH = –1 mA | |||||||
VDD = 0.9 V, IOH = –0.4 mA | |||||||
VDD = 0.5 V, IOH = –5 μA | 0.7 × VDD | ||||||
VOL | Low-level output voltage | VDD = 3.3 V, IOL = 3 mA | 0.3 | V | |||
VDD = 1.5 V, IOL = 2 mA | |||||||
VDD = 1.2 V, IOL = 1 mA | |||||||
VDD = 0.9 V, IOL = 500 μA | |||||||
VOL | Low-level output voltage | RESET only | VDD = 0.4 V, IOL = 5 μA | 0.1 | V | ||
VIT– | Negative-going input threshold voltage(1) | TPS31xxE09 | TA = 25°C | 0.854 | 0.86 | 0.866 | V |
TPS31xxE12 | 1.133 | 1.142 | 1.151 | ||||
TPS31xxE15 | 1.423 | 1.434 | 1.445 | ||||
TPS31xxE16 | 1.512 | 1.523 | 1.534 | ||||
TPS31xxH20 | 1.829 | 1.843 | 1.857 | ||||
TPS31xxK33 | 2.919 | 2.941 | 2.963 | ||||
TPS31xxE09 | TA = –40°C to 125°C | 0.817 | 0.903 | ||||
TPS31xxE12 | 1.084 | 1.199 | |||||
TPS31xxE15 | 1.362 | 1.505 | |||||
TPS31xxK33 | 2.823 | 3.058 | |||||
VIT–(S) | Negative-going input threshold voltage(1) | SENSE, PFI | VDD ≥ 0.8 V, TA = 25°C | 0.542 | 0.551 | 0.559 | V |
VDD ≥ 0.8 V, TA = –40°C to 125°C | 0.5 | 0.58 | |||||
VHYS | Hysteresis at VDD input | 0.8 V ≤ VIT– < 1.5 V | 20 | mV | |||
1.6 V ≤ VIT– < 2.4 V | 30 | ||||||
2.5 V ≤ VIT– < 3.3 V | 50 | ||||||
T(K) | Temperature coefficient of VIT−, PFI, SENSE | TA = –40°C to 85°C | –0.012 | –0.019 | %/K | ||
VHYS(S) | Hysteresis at SENSE, PFI input | VDD ≥ 0.8 V | 15 | mV | |||
IIH | High-level input current | MR | MR = VDD, VDD = 3.3 V | –25 | 25 | nA | |
SENSE, PFI, WDI | SENSE, PFI, WDI = VDD, VDD = 3.3 V |
–25 | 25 | ||||
IIL | Low-level input current | MR | MR = 0 V, VDD = 3.3 V | –47 | –33 | –25 | μA |
SENSE, PFI, WDI | SENSE, PFI, WDI = 0 V, VDD = 3.3 V |
–25 | 25 | nA | |||
IOH | High-level output current at RESET(2) | Open-drain | VDD = VIT– + 0.2 V, VOH = 3.3 V | 200 | nA | ||
IDD | Supply current | TA = –40°C to 85°C, VDD > VIT– (average current), VDD < 1.8 V | 1.2 | 3 | μA | ||
TA = –40°C to 125°C, VDD > VIT– (average current), VDD < 1.8 V | 3 | ||||||
TA = –40°C to 85°C, VDD > VIT– (average current), VDD > 1.8 V | 2 | 4.5 | |||||
TA = –40°C to 125°C, VDD > VIT– (average current), VDD > 1.8 V | 5.5 | ||||||
TA = –40°C to 85°C, VDD < VIT–, VDD < 1.8 V | 22 | ||||||
TA = –40°C to 125°C, VDD < VIT–, VDD < 1.8 V | 27 | ||||||
TA = –40°C to 85°C, VDD < VIT–, VDD > 1.8 V | 27 | ||||||
TA = –40°C to 125°C, VDD < VIT–, VDD > 1.8 V | 32 | ||||||
Internal pullup resistor at MR | 70 | 100 | 130 | kΩ | |||
CIN | Input capacitance at MR, SENSE, PFI, WDI | VIN = 0 V to VDD | 1 | pF |
MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
tT(OUT) | Time-out period | at WDI | VDD ≥ 0.85 V | 0.55 | 1.1 | 1.65 | s |
tW | Pulse duration | at VDD | VIH = 1.1 × VIT–, VIL = 0.9 × VIT–, VIT– = 0.86 V | 20 | μs | ||
at MR | VDD ≥ VIT– + 0.2 V, VIL = 0.3 × VDD, VIH = 0.7 × VDD | 0.1 | |||||
at SENSE | VDD ≥ VIT–, VIH = 1.1 × VIT − (S), VIL = 0.9 × VIT − (S) | 20 | |||||
at PFI | VDD ≥ 0.85 V, VIH = 1.1 × VIT − (S),VIL = 0.9 × VIT − (S) | 20 | |||||
at WDI | VDD ≥ VIT–, VIL = 0.3 × VDD, VIH = 0.7 × VDD | 0.3 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tD | Delay time | VDD ≥ 1.1 × VIT–, MR = 0.7 × VDD. See Timing Requirements. |
65 | 130 | 195 | ms | |
tPHL(VDD) | Propagation delay time, high-to-low level output |
VDD to RESET or RSTVDD delay | VIH = 1.1 × VIT–, VIL = 0.9 × VIT– | 40 | μs | ||
tPHL(SENSE) | Propagation delay time, high-to-low level output |
SENSE to RESET or RSTSENSE delay | VDD ≥ 0.8 V, VIH = 1.1 × VIT–, VIL = 0.9 × VIT– | 40 | μs | ||
tPHL(PFO) | Propagation delay time, high-to-low level output |
PFI to PFO delay | VDD ≥ 0.8 V, VIH = 1.1 × VIT–, VIL = 0.9 × VIT– | 40 | μs | ||
tPLH(PFO) | Propagation delay time, low-to-high level output |
PFI to PFO delay | VDD ≥ 0.8 V, VIH = 1.1 × VIT–, VIL = 0.9 × VIT– | 300 | μs | ||
tPHL(MR) | Propagation delay time, high-to-low level output |
MR to RESET. RSTVDD, RSTSENSE delay | VDD ≥ 1.1 × VIT–, VIL = 0.3 × VDD, VIH = 0.7 × VDD | 1 | 5 | μs |