ZHCS033G January   2011  – November 2015 TPS24710 , TPS24711 , TPS24712 , TPS24713

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 DETAILED PIN DESCRIPTIONS
        1. 8.3.1.1  EN
        2. 8.3.1.2  FLT
        3. 8.3.1.3  FLTb
        4. 8.3.1.4  GATE
        5. 8.3.1.5  GND
        6. 8.3.1.6  OUT
        7. 8.3.1.7  PG
        8. 8.3.1.8  PGb
        9. 8.3.1.9  PROG
        10. 8.3.1.10 SENSE
        11. 8.3.1.11 TIMER
        12. 8.3.1.12 VCC
    4. 8.4 Device Functional Modes
      1. 8.4.1 Board Plug In
      2. 8.4.2 Inrush Operation
      3. 8.4.3 Action of the Constant-Power Engine
      4. 8.4.4 Circuit Breaker and Fast Trip
      5. 8.4.5 Automatic Restart
      6. 8.4.6 PG, FLT, PGb, FLTb, and Timer Operations
      7. 8.4.7 Overtemperature Shutdown
      8. 8.4.8 Start-Up of Hot-Swap Circuit by VCC or EN
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power-Limited Start-Up
          1. 9.2.2.1.1 STEP 1. Choose RSENSE
          2. 9.2.2.1.2 STEP 2. Choose MOSFET M1
          3. 9.2.2.1.3 STEP 3. Choose Power-Limit Value, PLIM, and RPROG
          4. 9.2.2.1.4 STEP 4. Choose Output Voltage Rising Time, tON, CT
          5. 9.2.2.1.5 STEP 5. Calculate the Retry-Mode Duty Ratio
          6. 9.2.2.1.6 STEP 6. Select R1 and R2 for UV
          7. 9.2.2.1.7 STEP 7. Choose RGATE, R4, R5 and C1
        2. 9.2.2.2 Additional Design Considerations
          1. 9.2.2.2.1 Use of PG/PGb
          2. 9.2.2.2.2 Output Clamp Diode
          3. 9.2.2.2.3 Gate Clamp Diode
          4. 9.2.2.2.4 High-Gate-Capacitance Applications
          5. 9.2.2.2.5 Bypass Capacitors
          6. 9.2.2.2.6 Output Short-Circuit Measurements
          7. 9.2.2.2.7 Using Soft Start with TPS2471x
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
    2. 12.2 相关链接
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, all voltages referred to GND (unless otherwise noted) (1)
MIN MAX UNIT
Input voltage range EN, FLT(2)(3), FLTb(2)(4), GATE, OUT, PG(2)(3), PGb(2)(4), SENSE, VCC –0.3 30 V
PROG(2) –0.3 3.6
SENSE to VCC –0.3 0.3
TIMER –0.3 5
Sink current FLT, PG, FLTb, PGb 5 mA
Source current PROG Internally limited
Temperature Maximum junction, TJ Internally limited °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Do not apply voltages directly to these pins.
(3) for TPS24712/13
(4) for TPS24710/11

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except PG and PGb ±2000 V
PG, PGb ±500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range SENSE, VCC 2.5 18 V
EN, FLT, FLTb, PG, PGb, OUT 0 18
Sink current FLT, FLTb, PG, PGb 0 2 mA
Resistance PROG 4.99 500
External capacitance TIMER 1 nF
Operating junction temperature range, TJ –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS2471/x UNIT
MSOP (10) PINS
RθJA Junction-to-ambient thermal resistance 166.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 41.8
RθJB Junction-to-board thermal resistance 86.1
ψJT Junction-to-top characterization parameter 1.5
ψJB Junction-to-board characterization parameter 84.7
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

–40°C ≤ TJ ≤ 125°C, VCC = 12 V, VEN = 3 V, and RPROG = 50 kΩ to GND.
All voltages referenced to GND, unless otherwise noted.
PARAMETER CONDITIONS MIN NOM MAX UNIT
VCC
UVLO threshold, rising 2.2 2.32 2.45 V
UVLO threshold, falling 2.1 2.22 2.35 V
UVLO hysteresis(1) 0.1 V
Supply current Enabled ― IOUT + IVCC + ISENSE 1 1.4 mA
Disabled(1) ― EN = 0 V, IOUT + IVCC + ISENSE 0.45 mA
EN
Threshold voltage, falling 1.2 1.3 1.4 V
Hysteresis(1) 50 mV
Input leakage current 0 V ≤ VEN ≤ 30 V –1 0 1 µA
FLT, FLTb
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current VFLT = 0 V, 30 V –1 0 1 µA
VFLTb = 0 V, 30 V
PG, PGb
Threshold V(SENSE – OUT) rising, PG going low 140 240 340 mV
V(SENSE – OUT) rising, PGb going high
Hysteresis(1) Measured V(SENSE – OUT) falling, PG going high 70 mV
Measured V(SENSE – OUT) falling, PGb going low
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current VPG = 0 V, 30 V –1 0 1 µA
VPGb = 0 V, 30 V
PROG
Bias voltage Sourcing 10 µA 0.65 0.678 0.7 V
Input leakage current VPROG = 1.5 V –0.2 0 0.2 µA
TIMER
Sourcing current VTIMER = 0 V 8 10 12 µA
Sinking current VTIMER = 2 V 8 10 12 µA
VEN = 0 V, VTIMER = 2 V 2 4.5 7 mA
Upper threshold voltage 1.30 1.35 1.40 V
Lower threshold voltage 0.33 0.35 0.37 V
Timer activation voltage Raise GATE until ITIMER sinking, measure V(GATE – VCC), VCC = 12 V 5 5.9 7 V
Bleed-down resistance VENSD = 0 V, VTIMER = 2 V 70 104 130
OUT
Input bias current VOUT = 12 V 16 30 µA
GATE
Output voltage VOUT = 12 V 23.5 25.8 28 V
Clamp voltage Inject 10 µA into GATE, measure V(GATE – VCC) 12 13.9 15.5 V
Sourcing current VGATE = 12 V 20 30 40 µA
Sinking current Fast turnoff, VGATE = 14 V 0.5 1 1.4 A
Sustained, VGATE = 4 V to 23 V 6 11 20 mA
In inrush current limit, VGATE = 4 V to 23 V 20 30 40 µA
Pulldown resistance Thermal shutdown 14 20 26
SENSE
Input bias current VSENSE = 12 V, sinking current 30 40 µA
Current limit threshold VOUT = 12 V 22.5 25 27.5 mV
Power limit threshold VOUT = 7 V, RPROG = 50 kΩ 10.1 11.6 13.1 mV
VOUT = 2 V, RPROG = 25 kΩ 10.1 11.6 13.1
Fast-trip threshold 52 60 68 mV
OTSD
Threshold, rising 130 140 °C
Hysteresis(1) 10 °C
(1) Parameters are for reference only, and do not constitute part of TI’s published specifications for purposes of TI’s product warranty.

7.6 Timing Requirements

MIN NOM MAX UNIT
EN
Turnoff time EN ↓ to VGATE < 1 V, CGATE = 33 nF 20 60 150 µs
Deglitch time EN ↑ 8 14 18 µs
Disable delay EN ↓ to GATE ↓, CGATE = 0, tpff50–90, See Figure 1 0.1 0.4 1 µs
PG, PGb
Delay (deglitch) time Rising or falling edge 2 3.4 6 ms
GATE
Fast-turnoff duration 8 13.5 18 µs
Turn on delay VCC rising to GATE sourcing, tprr50-50, See Figure 2 100 250 µs
SENSE
Fast-turnoff duration 8 13.5 18 µs
Fast-turnoff delay(1) V(VCC – SENSE) = 80 mV, CGATE = 0 pF, tprf50–50, See Figure 3 200 ns
TPS24710 TPS24711 TPS24712 TPS24713 T0492-01_LVSAL1.gif Figure 1. tpff50–90 Timing Definition
TPS24710 TPS24711 TPS24712 TPS24713 T0494-01_LVSAL1.gif Figure 2. tprr50–50 Timing Definition
TPS24710 TPS24711 TPS24712 TPS24713 T0495-01_LVSAL1.gif Figure 3. tprf50–50 Timing Definition

7.7 Typical Characteristics

TPS24710 TPS24711 TPS24712 TPS24713 Figure_06_LVSAL1.gif
EN = High
Figure 4. Supply Current vs Input Voltage at Normal Operation
TPS24710 TPS24711 TPS24712 TPS24713 Figure_08_LVSAL1.gif
Figure 6. Voltage Across RSENSE in Inrush Current Limiting vs Temperature
TPS24710 TPS24711 TPS24712 TPS24713 Figure_10_SLVSAL2.gif
VVCC = 12 V = VOUT
Figure 8. Gate Current vs Voltage Across R(SENSE)
TPS24710 TPS24711 TPS24712 TPS24713 Figure_11_SLVSAL2.gif
VVCC = VGATE = 12 V
Figure 10. Gate Current During Fast Trip
TPS24710 TPS24711 TPS24712 TPS24713 Figure_13_LVSAL1.gif
Figure 12. Gate Voltage With Zero Gate Current vs Input Voltage
TPS24710 TPS24711 TPS24712 TPS24713 Figure_15_LVSAL1.gif
Figure 14. Fault-Timer Period vs Temperature With Various TIMER Capacitors
TPS24710 TPS24711 TPS24712 TPS24713 Figure_17_LVSAL1.gif
Figure 16. UVLO Threshold Voltage vs Temperature
TPS24710 TPS24711 TPS24712 TPS24713 Figure_19_LVSAL1.gif
Figure 18. Fast-Trip Threshold Voltage vs Temperature
TPS24710 TPS24711 TPS24712 TPS24713 Figure_21_LVSAL1.gif
Figure 20. FLT and FLTb Open-Drain Output Voltage in Low State
TPS24710 TPS24711 TPS24712 TPS24713 Figure_24_LVSAL1.gif
Figure 22. Timer Upper Threshold Voltage vs Temperature at Various Input Voltages
TPS24710 TPS24711 TPS24712 TPS24713 Figure_26_LVSAL1.gif
Figure 24. Timer Sourcing Current vs Temperature at Various Input Voltages
TPS24710 TPS24711 TPS24712 TPS24713 Figure_07_LVSAL1.gif
EN = 0 V
Figure 5. Supply Current vs Input Voltage at Shutdown
TPS24710 TPS24711 TPS24712 TPS24713 Figure_09_LVSAL1.gif
Figure 7. Voltage Across RSENSE in Inrush Power Limiting vs VDS of Pass MOSFET
TPS24710 TPS24711 TPS24712 TPS24713 D001_SLVSAL2.gif
VVCC = 12 V VOUT = 0 V RPROG = 50 kΩ
VGATE = 3 V
Figure 9. Gate Current vs V(VCC_SENSE)
TPS24710 TPS24711 TPS24712 TPS24713 Figure_12_SLVSAL2.gif
VVCC = VGATE = 3.3 V
Figure 11. Gate Current During Fast Trip
TPS24710 TPS24711 TPS24712 TPS24713 Figure_14_LVSAL1.gif
Figure 13. TIMER Activation Voltage Threshold vs Input Voltage at Various Temperatures
TPS24710 TPS24711 TPS24712 TPS24713 Figure_15_LVSAL2.gif
Figure 15. EN Threshold Voltage vs Temperature
TPS24710 TPS24711 TPS24712 TPS24713 Figure_17_LVSAL2.gif
Figure 17. Threshold Voltage of VDS vs Temperature, PGb and PG Rising and Falling
TPS24710 TPS24711 TPS24712 TPS24713 Figure_20_LVSAL1.gif
Figure 19. PG and PGb Open-Drain Output Voltage in Low State
TPS24710 TPS24711 TPS24712 TPS24713 Figure_23_LVSAL1.gif
Figure 21. Supply Current vs Input Voltage at Various Temperatures When EN Pulled Low
TPS24710 TPS24711 TPS24712 TPS24713 Figure_25_LVSAL1.gif
Figure 23. Timer Lower Threshold Voltage vs Temperature at Various Input Voltages
TPS24710 TPS24711 TPS24712 TPS24713 Figure_27_LVSAL1.gif
Figure 25. Timer Sinking Current vs Temperature at Various Input Voltages