ZHCSF80B May   2016  – September 2017 TPS22975

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics—VBIAS = 5 V
    6. 7.6 Electrical Characteristics—VBIAS = 2.5 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical DC Characteristics
    9. 7.9 Typical AC Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Adjustable Rise Time
      2. 9.3.2 Quick-Output Discharge (QOD) (Optional)
      3. 9.3.3 Thermal Shutdown
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 ON and OFF Control
      2. 10.1.2 Input Capacitor (CIN) (Optional)
      3. 10.1.3 Output Capacitor (CL) (Optional)
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 开发支持
    2. 13.2 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VBIAS Bias voltage –0.3 6 V
VON On voltage –0.3 6 V
IMAX Maximum continuous switch current 6 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 8 A
TJ Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage 0.6 VBIAS V
VBIAS Bias voltage 2.5 5.7 V
VON ON voltage 0 5.7 V
VOUT Output voltage VIN V
VIH High-level input voltage, ON VBIAS = 2.5 V to 5 V, TA< 85°C 1.05 5.7 V
VBIAS = 2.5 V to 5 V, TA< 105°C 1.1 5.7
VBIAS = 5 V to 5.7 V, TA< 105°C 1.2 5.7
VIL Low-level input voltage, ON VBIAS = 2.5 V to 5.7 V 0 0.5 V
CIN Input capacitor 1(1) µF
TA Operating free-air temperature(1)(2) –40 105 °C
(1) See the Application Information section.
(2) In applications where high power dissipation and-or poor package thermal resistance is present, the maximum ambient temperature may have to be derated and device lifetime may be affected. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part-package in the application (θJA), and can be approximated by the following equation: TA (max) = TJ(max) – (θJA × PD(max)).

7.4 Thermal Information

THERMAL METRIC(1) TPS22975 UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 74.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 81 °C/W
RθJB Junction-to-board thermal resistance 44.7 °C/W
ψJT Junction-to-top characterization parameter 3.9 °C/W
ψJB Junction-to-board characterization parameter 45.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 16.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specifications in the following table applies where VBIAS = 5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 A,
VIN = VON = 5 V		 –40°C to +105°C 37 45 µA
ISD, VBIAS VBIAS shutdown current VON = VOUT = 0 V –40°C to +105°C 2.3 µA
ISD, VIN VIN off-state supply current VON = VOUT = 0 V VIN = 5 V –40°C to +85°C 0.005 5 µA
–40°C to +105°C 10
VIN = 3.3 V –40°C to +85°C 0.002 1.5
–40°C to +105°C 3.5
VIN = 1.8 V –40°C to +85°C 0.002 1
–40°C to +105°C 2
VIN = 0.6 V –40°C to +85°C 0.001 0.5
–40°C to +105°C 1
ION On-pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON On-resistance IOUT = –200 mA VIN = 5 V 25°C 16 19 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 3.3 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.8 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.5 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.05 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 0.6 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VON, HYS On-pin hysteresis VIN = 5 V 25°C 120 mV
RPD (1) Output pulldown resistance VIN = 5 V, VON = 0 V –40°C to +105°C 230 300 Ω
TSD Thermal shutdown Junction temperature rising 160 °C
TSD, HYS Thermal shutdown hysteresis Junction temperature falling 20 °C
(1) TPS22975 only

7.6 Electrical Characteristics—VBIAS = 2.5 V

Unless otherwise noted, the specifications in the following table applies where VBIAS = 2.5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 mA,
VIN = VON = 2.5 V		 –40°C to +105°C 14 20 µA
ISD, VBIAS VBIAS shutdown current VON = VOUT = 0 V –40°C to +105°C 1 µA
ISD, VIN VIN off-state supply current VON = VOUT = 0 V VIN = 2.5 V –40°C to +85°C 0.005 1.3 µA
–40°C to +105°C 2.6
VIN = 1.8 V –40°C to +85°C 0.002 1
–40°C to +105°C 2
VIN = 1.05 V –40°C to +85°C 0.002 0.8
–40°C to +105°C 1.5
VIN = 0.6 V –40°C to +85°C 0.001 0.5
–40°C to +105°C 1
ION On-pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON On-resistance IOUT = –200 mA VIN = 2.5 V 25°C 20 26 mΩ
–40°C to +85°C 32
–40°C to +105°C 34
VIN = 1.8 V 25°C 18 23
–40°C to +85°C 29
–40°C to +105°C 31
VIN = 1.5 V 25°C 18 22
–40°C to +85°C 28
–40°C to +105°C 30
VIN = 1.2 V 25°C 17 22
–40°C to +85°C 27
–40°C to +105°C 29
VIN = 0.6 V 25°C 17 21
–40°C to +85°C 26
–40°C to +105°C 27
VON, HYS On-pin hysteresis VIN = 2.5 V 25°C 85 mV
RPD(1) Output pulldown resistance VIN = 2.5 V, VON = 0 V –40°C to +105°C 230 330 Ω
TSD Thermal shutdown Junction temperature rising 160 °C
TSD, HYS Thermal shutdown hysteresis Junction temperature falling 20 °C
(1) TPS22975 only

7.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1450 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1750
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 600
VIN = 0.6 V, VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 620 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 280
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 485
VIN = VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2180 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2150
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1120
VIN = 0.6 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1315 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 3
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 650
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 975

7.8 Typical DC Characteristics

TPS22975 D001_SLVSDD0A.gif
VIN = VBIAS VON = 5 V VOUT = 0 V
Figure 1. VBIAS Quiescent Current vs Bias Voltage
TPS22975 D003_SLVSDD0A.gif
VIN = VBIAS VON = 0 V VOUT = 0 V
Figure 3. VBIAS Shutdown Current vs Bias Voltage
TPS22975 D005_SLVSDD0A.gif
VBIAS = 5 V IOUT = –200 mA VON = 5 V
Note: All three RON curves have the same values; therefore, only one line is visible.
Figure 5. On-Resistance vs Ambient Temperature
TPS22975 D007_SLVSDD0A.gif
VBIAS = 5 V IOUT = –200 mA VON = 5 V
Figure 7. On-Resistance vs Input Voltage
TPS22975 D009_SLVSDD0A.gif
TA = 25°C IOUT = –200 mA VON = 5 V
Figure 9. On-Resistance vs Bias Voltage
TPS22975 D002_SLVSDD0A.gif
VBIAS = 5 V VON = 5 V VOUT = 0 V
Figure 2. VBIAS Quiescent Current vs Input Voltage
TPS22975 D004_SLVSDD0A.gif
VBIAS = 5 V VON = 0 V VOUT = 0 V
Figure 4. VIN Off-State Supply Current vs Input Voltage
TPS22975 D006_SLVSDD0A.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5 V
Figure 6. On-Resistance vs Ambient Temperature
TPS22975 D008_SLVSDD0A.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5 V
Figure 8. On-Resistance vs Input Voltage
TPS22975 D010_SLVSDD0A.gif
VIN = 2.5 V VON = 0 V
Figure 10. Output Pull Down Resistance vs Bias Voltage

7.9 Typical AC Characteristics

TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
TPS22975 D011_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 11. Delay Time vs Input Voltage
TPS22975 D013_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 13. Fall Time vs Input Voltage
TPS22975 D015_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 15. Turnoff Time vs Input Voltage
TPS22975 D017_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 17. Turnon Time vs Input Voltage
TPS22975 D019_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 19. Rise Time vs Input Voltage
TPS22975 SC_003.gif
VIN = 0.6 V VBIAS = 2.5 V
Figure 21. Turnon Response Time
TPS22975 SC_004.gif
VIN = 2.5 V VBIAS = 2.5 V
Figure 23. Turnon Response Time
TPS22975 SC_007.gif
VIN = 0.6 V VBIAS = 2.5 V
Figure 25. Turnoff Response Time
TPS22975 SC_008.gif
VIN = 2.5 V VBIAS = 2.5 V
Figure 27. Turnoff Response Time
TPS22975 D012_SLVSDD0A.gif
VBIAS = 5 V
Figure 12. Delay Time vs Input Voltage
TPS22975 D014_SLVSDD0A.gif
VBIAS = 5 V
Figure 14. Fall Time vs Input Voltage
TPS22975 D016_SLVSDD0A.gif
VBIAS = 5 V
Figure 16. Turnoff Time vs Input Voltage
TPS22975 D018_SLVSDD0A.gif
VBIAS = 5 V
Figure 18. Turnon Time vs Input Voltage
TPS22975 D020_SLVSDD0A.gif
VBIAS = 5 V
Figure 20. Rise Time vs Input Voltage
TPS22975 SC_001.gif
VIN = 0.6 V VBIAS = 5 V
Figure 22. Turnon Response Time
TPS22975 SC_002.gif
VIN = 5 V VBIAS = 5 V
Figure 24. Turnon Response Time
TPS22975 SC_005.gif
VIN = 0.6 V VBIAS = 5 V
Figure 26. Turnoff Response Time
TPS22975 SC_006.gif
VIN = 5 V VBIAS = 5 V
Figure 28. Turnoff Response Time