SLVS802C August   2009  – May  2015 TPS22932B

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Switching Characteristics, 1.2 V
    7. 7.7  Switching Characteristics, 1.5 V
    8. 7.8  Switching Characteristics, 1.8 V
    9. 7.9  Switching Characteristics, 2.5 V
    10. 7.10 Switching Characteristics, 3 V
    11. 7.11 Switching Characteristics, 3.3 V
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Configurable Logic Function
      2. 9.3.2 Quick Output Discharge
    4. 9.4 Device Functional Modes
      1. 9.4.1 Logic Configurations
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 ON and OFF Control
      2. 10.1.2 Input Capacitor
      3. 10.1.3 Output Capacitor
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 VIN to VOUT Voltage Drop
        2. 10.2.2.2 Managing Inrush Current
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Community Resources
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN Input voltage –0.3 4 V
VOUT Output voltage VIN + 0.3 V
IMAX Maximum continuous switch current 500 mA
Tlead Maximum lead temperature (10-s soldering time) 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
IOUT Output current 500 mA
VIN Input voltage 1.1 3.6 V
VOUT Output voltage VIN
CIN Input capacitor 1(1) μF
TA Operating free-air temperature –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS22932B UNIT
YFP (DSBGA)
6 PINS
RθJA Junction-to-ambient thermal resistance 125.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.4 °C/W
RθJB Junction-to-board thermal resistance 26 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 26 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP(1) MAX UNIT
IIN Quiescent current IOUT = 0 VIN = 1.1 V Full 140 275 nA
VIN = 1.8 V 280 500
VIN = 3.6 V 860 920
IIN(OFF) OFF-state supply current VON = GND, OUT = Open VIN = 1.1 V Full 80 225 nA
VIN = 1.8 V 125 300
VIN = 3.6 V 340 650
IIN(LEAKAGE) OFF-state switch current VON = GND, VOUT = 0 VIN = 1.1 V Full 80 225 nA
VIN = 1.8 V 125 300
VIN = 3.6 V 340 650
rON ON-state resistance IOUT = –200 mA VIN = 3.6 V 25°C 55 70 mΩ
Full 85
VIN = 2.5 V 25°C 65 80
Full 100
VIN = 1.8 V 25°C 75 90
Full 110
VIN = 1.2 V 25°C 115 130
Full 155
VIN = 1.1 V 25°C 135 150
Full 170
rPD Output pulldown resistance VIN = 3.3 V, VON = 0, IOUT = 30 mA 25°C 75 120 Ω
ION ON-state input leakage current VON = 1.1 V to 3.6 V or GND Full 1 μA
Control Inputs (ON1, ON2, ON3)
Input leakage current VIN = 1.1 V to 3.6 V or GND Full 1 μA
VON Control input voltage Full 3.6 V
VT+ Positive-going input voltage threshold VIN = 1.1 V to 1.8 V Full 0.5 0.8 V
VIN = 1.8 V to 3.6 V 0.6 0.9
VT– Negative-going input voltage threshold VIN = 1.1 V to 1.8 V Full 0.2 0.6 V
VIN = 1.8 V to 3.6 V 0.3 0.7
ΔVT Hysteresis (VT+ – VT–) VIN = 1.1 V to 3.6 V Full 0.2 0.6 V
(1) Typical values are at the specified VIN and TA = 25°C.

7.6 Switching Characteristics, 1.2 V

VIN = 1.2 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 350 μs
CL = 1 μF 390
CL = 3 μF 450
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 30 μs
CL = 1 μF 70
CL = 3 μF 160
tr VOUT rise time RL = 500 Ω CL = 0.1 μF 240 μs
CL = 1 μF 240
CL = 3 μF 260
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 20 μs
CL = 1 μF 150
CL = 3 μF 450

7.7 Switching Characteristics, 1.5 V

VIN = 1.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 290 μs
CL = 1 μF 320
CL = 3 μF 350
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 30 μs
CL = 1 μF 70
CL = 3 μF 150
tr VOUT rise time RL = 500 Ω CL = 0.1 μF 205 μs
CL = 1 μF 205
CL = 3 μF 220
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 18 μs
CL = 1 μF 145
CL = 3 μF 445

7.8 Switching Characteristics, 1.8 V

VIN = 1.8 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 215 μs
CL = 1 μF 240
CL = 3 μF 260
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 24 μs
CL = 1 μF 60
CL = 3 μF 142
tr VOUT rise time RL = 500 CL = 0.1 μF 165 μs
CL = 1 μF 165
CL = 3 μF 175
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 18 μs
CL = 1 μF 145
CL = 3 μF 440

7.9 Switching Characteristics, 2.5 V

VIN = 2.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 185 μs
CL = 1 μF 205
CL = 3 μF 225
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 2 μs
CL = 1 μF 60
CL = 3 μF 140
tr VOUT rise time RL = 500 Ω CL = 0.1 μF 145 μs
CL = 1 μF 150
CL = 3 μF 160
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 18 μs
CL = 1 μF 147
CL = 3 μF 445

7.10 Switching Characteristics, 3 V

VIN = 3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 170 μs
CL = 1 μF 190
CL = 3 μF 210
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 2 μs
CL = 1 μF 60
CL = 3 μF 140
tr VOUT rise time RL = 500 Ω CL = 0.1 μF 140 μs
CL = 1 μF 140
CL = 3 μF 150
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 17 μs
CL = 1 μF 148
CL = 3 μF 450

7.11 Switching Characteristics, 3.3 V

VIN = 3.3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turnon time RL = 500 Ω CL = 0.1 μF 160 μs
CL = 1 μF 175
CL = 3 μF 195
tOFF Turnoff time RL = 500 Ω CL = 0.1 μF 20 μs
CL = 1 μF 55
CL = 3 μF 135
tr VOUT rise time RL = 500 Ω CL = 0.1 μF 135 μs
CL = 1 μF 135
CL = 3 μF 145
tf VOUT fall time RL = 500 Ω CL = 0.1 μF 17 μs
CL = 1 μF 148
CL = 3 μF 450

7.12 Typical Characteristics

TPS22932B g_ron_vin_lvs802.gif
Figure 1. rON vs VIN
TPS22932B g_ron_ta_lvs802.gif
VIN = 3.3 V
Figure 3. rON vs TA
TPS22932B g_iin_ta_lvs802.gif
VIN = 3.3 V, ON2 = VIN, ON1–ON3 = 0 V, Iout = 0
Figure 5. Quiescent Current vs TA
TPS22932B g_iinoff_ta_lvs802.gif
VIN = 3.3 V, ON1–ON2–ON3 = 0 V
Figure 7. IIN(OFF) vs Temperature
TPS22932B g_iinleak_ta_lvs802.gif
VIN = 3.3 V, ON1–ON2–ON3 = 0 V
Figure 9. IIN(Leakage) vs Temperature
TPS22932B g_tonoff_ta_tps32b_lvs802.gif
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
Figure 11. tON/tOFF vs Temperature
TPS22932B g_32b_tonresp01_lvs802.gif
CL = 3 µF, RL = 500 Ω, VIN = 3.3 V
Figure 13. tON Response
TPS22932B g_32b_tonresp03_lvs802.gif
CL = 3 µF, RL = 500 Ω, VIN = 3.3 V
Figure 15. tON Response
TPS22932B g_32b_tonresp05_lvs802.gif
CL = 0.1 µF, RL = 500 Ω, VIN = 1.2 V
Figure 17. tON Response
TPS22932B g_32b_tonresp07_lvs802.gif
CL = 3 µF, RL = 500 Ω, VIN = 1.2 V
Figure 19. tON Response
TPS22932B g_toffresp01_lvs802.gif
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
Figure 21. tOFF Response
TPS22932B g_toffresp03_lvs802.gif
CL = 3 µF, RL = 500 Ω, VIN = 3.3 V
Figure 23. tOFF Response
TPS22932B g_toffresp05_lvs802.gif
CL = 0.1 µF, RL = 500 Ω, VIN = 1.2 V
Figure 25. tOFF Response
TPS22932B g_toffresp07_lvs802.gif
CL = 3 µF, RL = 500 Ω, VIN = 1.2 V
Figure 27. tOFF Response
TPS22932B g_volt_load_lvs802.gif
Figure 2. Voltage Drop vs Load Current
TPS22932B g_iin_vin_lvs802.gif
ON2 = VIN, ON1–ON3 = 0 V, Iout= 0
Figure 4. Quiescent Current vs VIN
TPS22932B g_iinoff_vin_lvs802.gif
ON1–ON2–ON3 = 0 V
Figure 6. IIN(OFF) vs VIN
TPS22932B g_iinleak_vin_lvs802.gif
ON1–ON2–ON3 = 0 V, Vout = 0
Figure 8. IIN(Leakage) vs VIN
TPS22932B g_oninputthres_lvs802.gif
Figure 10. ON-Input Threshold
TPS22932B g_trisetfall_ta_tps32b_lvs802.gif
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
Figure 12. trise/tfall vs Temperature
TPS22932B g_32b_tonresp02_lvs802.gif
CL = 0.1 µF, RL = 10 Ω, VIN = 3.3 V
Figure 14. tON Response
TPS22932B g_32b_tonresp04_lvs802.gif
CL = 3 µF, RL = 10 Ω, VIN = 3.3 V
Figure 16. tON Response
TPS22932B g_32b_tonresp06_lvs802.gif
CL = 0.1 µF, RL = 10 Ω, VIN = 1.2 V
Figure 18. tON Response
TPS22932B g_32b_tonresp08_lvs802.gif
CL = 3 µF, RL = 10 Ω, VIN = 1.2 V
Figure 20. tON Response
TPS22932B g_toffresp02_lvs802.gif
CL = 0.1 µF, RL = 11 Ω, VIN = 3.3 V
Figure 22. tOFF Response
TPS22932B g_toffresp04_lvs802.gif
CL = 3 µF, RL = 11 Ω, VIN = 3.3 V
Figure 24. tOFF Response
TPS22932B g_toffresp06_lvs802.gif
CL = 0.1 µF, RL = 11 Ω, VIN = 1.2 V
Figure 26. tOFF Response
TPS22932B g_toffresp08_lvs802.gif
CL = 3 µF, RL = 11 Ω, VIN = 1.2 V
Figure 28. tOFF Response