ZHCSQV7A march   2023  – august 2023 TPS2117

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
      1. 7.3.1 Priority and Manual Mode
        1. 7.3.1.1 Priority Switching
        2. 7.3.1.2 Manual Switching
      2. 7.3.2 Diode Mode
    4. 7.4 Feature Description
      1. 7.4.1 Truth Table
      2. 7.4.2 Soft Start
      3. 7.4.3 Status Indication
      4. 7.4.4 Reverse Current Blocking
    5. 7.5 VINx Collapse Rate
    6. 7.6 Fast Switchover Behavior
    7. 7.7 Output Voltage Drop
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Design Procedure

To determine how much inrush current is caused by the output capacitor, use Equation 1.
Equation 1. IINRUSH = COUT × VOUT / tSS
where
  • IINRUSH = amount of inrush current caused by COUT
  • COUT = capacitance on VOUT
  • tSS = output voltage soft start time
  • VOUT = final value of the output voltage

With a final output voltage of 5 V, the expected rise time is 1.7 ms. Using the inrush current equation, the inrush current caused by a 100-µF capacitance would be 294 mA, well below the 500-mA target.