ZHCSLC3B may   2020  – april 2023 TPD3S713-Q1 , TPD3S713A-Q1

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 FAULT Response
      2. 8.3.2 Cable Compensation
        1. 8.3.2.1 Design Procedure
      3. 8.3.3 DP and DM Protection
      4. 8.3.4 VBUS OVP Protection
      5. 8.3.5 Output and DP or DM Discharge
      6. 8.3.6 Overcurrent Protection
      7. 8.3.7 Undervoltage Lockout
      8. 8.3.8 Thermal Sensing
      9. 8.3.9 Current-Limit Setting
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Truth Table (TT)
      2. 8.4.2 Client Mode
      3. 8.4.3 High-Bandwidth Data-Line Switch
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Capacitance
        2. 9.2.2.2 Output Capacitance
        3. 9.2.2.3 BIAS Capacitance
        4. 9.2.2.4 Output and BIAS TVS
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RVC|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

DP and DM Protection

DP and DM protection consists of ESD and OVP (overvoltage protection). The DP_IN and DM_IN pins provide ESD protection up to ±15 kV (air discharge) and ±8 kV (contact discharge) per IEC 61000-4-2 (see the ESD Ratings section for test conditions).

The ESD stress seen at DP_IN and DM_IN is impacted by many external factors, like the parasitic resistance and inductance between ESD test points and the DP_IN and DM_IN pins. For air discharge, the temperature and humidity of the environment can cause some difference, so the IEC performance must always be verified in the end-application circuit.

The IEC ESD performance of the TPD3S713x-Q1 device depends on the capacitance connected from BIAS to GND. TI recommends a 2.2-µF capacitor placed close to the BIAS pin. Connect the BIAS pin to BUS using a 5.1-kΩ resistor as a discharge path for the ESD stress.

OVP protection is provided for short-to-VBUS or short-to-battery conditions in the vehicle harness, preventing damage to the upstream USB transceiver or hub. When the voltage on DP_IN or DM_IN exceeds 3.9 V (typical), the TPD3S713x-Q1 device quickly responds to block the high-voltage reverse connection to DP_OUT and DM_OUT. Overcurrent short-to-GND protection for DP and DM is provided by the upstream USB transceiver.