SCES200O April   1999  – August 2015 SN74LVC2G14

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics, -40°C to 85°C
    7. 6.7 Switching Characteristics, -40°C to 125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Support Translation Down (5 V to 3.3 V; 3.3 V to 1.8 V)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|6
  • YZP|6
  • DCK|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature –65 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±XXX V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±YYY V may actually have higher performance.

6.3 Recommended Operating Conditions

See (1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC2G14 UNIT
DBV (SOT23) DCK (SC70) YZP (DSBGA)
6 PINS 6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 215 259 139 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55 87 18 °C/W
RθJB Junction-to-board thermal resistance 57 89 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC –40°C to 85°C –40°C to 125°C UNIT
MIN TYP(1) MAX MIN TYP(1) MAX
VT+
Positive-going input threshold voltage
1.65 V 0.7 1.4 0.7 1.4 V
2.3 V 1 1.7 1 1.7
3 V 1.3 2.2 1.3 2.2
4.5 V 1.9 3.1 1.9 3.1
5.5 V 2.2 3.7 2.2 3.7
VT–
Negative-going input threshold voltage
1.65 V 0.3 0.7 0.3 0.7 V
2.3 V 0.4 1 0.4 1
3 V 0.6 1.3 0.6 1.3
4.5 V 1.1 2 1.1 2
5.5 V 1.4 2.5 1.4 2.5
ΔVT
Hysteresis
(VT+ – VT–)
1.65 V 0.3 0.8 0.3 0.8 V
2.3 V 0.4 0.9 0.4 0.9
3 V 0.4 1.1 0.4 1.1
4.5 V 0.6 1.3 0.6 1.3
5.5 V 0.7 1.4 0.7 1.4
VOH IOH = –100 μA 1.65 V to 4.5 V VCC – 0.1 VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2 1.2
IOH = –8 mA 2.3 V 1.9 1.9
IOH = –16 mA 3 V 2.4 2.4
IOH = –24 mA 3 V 2.3 2.3
IOH = –32 mA 4.5 V 3.8 3.8
VOL IOL = 100 μA 1.65 V to 4.5 V 0.1 0.1 V
IOL = 4 mA 1.65 V 0.45 0.45
IOL = 8 mA 2.3 V 0.3 0.3
IOL = 16 mA 3 V 0.4 0.4
IOL = 24 mA 3 V 0.55 0.55
IOL = 32 mA 4.5 V 0.55 0.55
II A input VI = 5.5 V or GND 0 to 5.5 V ±5 ±5 μA
Ioff VI or VO = 5.5 V 0 ±10 ±10 μA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 10 μA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND
3 V to 5.5 V 500 500 μA
CI VI = VCC or GND 3.3 V 4 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics, –40°C to 85°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN MAX MIN MAX MIN MAX MIN MAX
tpd A Y 3.9 9.5 1.9 5.7 2 5.4 1.5 4.3 ns

6.7 Switching Characteristics, –40°C to 125°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN MAX MIN MAX MIN MAX MIN MAX
tpd A Y 3.9 10.5 1.9 6.5 2 6 1.5 4.7 ns

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V UNIT
TYP TYP TYP TYP
Cpd Power dissipation capacitance f = 10 MHz 16 17 18 21 pF

6.9 Typical Characteristics

SN74LVC2G14 tempvstpd.gif
Figure 1. TPD Across Temperature at 3.3 V VCC
SN74LVC2G14 D002_SCES865.gif
Figure 2. TPD Across VCC at 25°C