SCES499E June   2001  – April 2015 SN74LVC1G66-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Analog Switch Characteristics
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –0.5 6.5 V
VI Input voltage(2)(3) –0.5 6.5 V
VI/O Switch I/O voltage(2)(3)(4) –0.5 VCC + 0.5 V
IIK Control input clamp current VI < 0 –50 mA
IIOK I/O port diode current VI/O < 0 –50 mA
IT ON-state switch current VI/O < 0 to VCC ±50 mA
Continuous current through VCC or GND ±100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4) This value is limited to 5.5 V maximum.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) 2000 V
Charged-device model (CDM), per AEC Q100-011 1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage 1.65 5.5 V
VI/O I/O port voltage 0 VCC V
VIH High-level input voltage, control input VCC = 1.65 V to 1.95 V VCC × 0.65 V
VCC = 2.3 V to 2.7 V VCC × 0.7
VCC = 3 V to 3.6 V VCC × 0.7
VCC = 4.5 V to 5.5 V VCC × 0.7
VIL Low-level input voltage, control input VCC = 1.65 V to 1.95 V VCC × 0.35 V
VCC = 2.3 V to 2.7 V VCC × 0.3
VCC = 3 V to 3.6 V VCC × 0.3
VCC = 4.5 V to 5.5 V VCC × 0.3
VI Control input voltage 0 5.5 V
Δt/Δv Input transition rise and fall time VCC = 1.65 V to 1.95 V 20 ns/V
VCC = 2.3 V to 2.7 V 20
VCC = 3 V to 3.6 V 10
VCC = 4.5 V to 5.5 V 10
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1G66-Q1 UNIT
DBV (SOT-23) DCK (SC70)
5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 206 252 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
ron ON-state switch resistance VI = VCC or GND,
VC = VIH
(see Figure 2 and Figure 1)		 IS = 4 mA 1.65 V 12 35 Ω
IS = 8 mA 2.3 V 9 30
IS = 16 mA 3 V 9 30
IS = 16 mA 4.5 V 5.5 25
ron(p) Peak on resistance VI = VCC or GND,
VC = VIH
(see Figure 2 and Figure 1)		 IS = 4 mA 1.65 V 74.5 165 Ω
IS = 8 mA 2.3 V 20 60
IS = 16 mA 3 V 12.5 35
IS = 16 mA 4.5 V 7.5 25
IS(off) OFF-state switch leakage current VI = VCC and VO = GND or
VI = GND and VO = VCC,
VC = VIL (see Figure 3)		 5.5 V ±1 μA
±0.1(1)
IS(on) ON-state switch leakage current VI = VCC or GND, VC = VIH, VO = Open
(see Figure 4)		 5.5 V ±1 μA
±0.1(1)
II Control input current VC = VCC or GND 5.5 V ±1 μA
±0.1(1)
ICC Supply current VC = VCC or GND 5.5 V 10 μA
1(1)
ΔICC Supply current change VC = VCC – 0.6 V 5.5 V 500 μA
Cic Control input capacitance 5 V 2 pF
Cio(off) Switch input and output capacitance 5 V 6 pF
Cio(on) Switch input and output capacitance 5 V 13 pF
(1) TA = 25°C

6.6 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 5)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V		 UNIT
MIN MAX MIN MAX MIN MAX MIN MAX
tpd(1) Propagation delay A or B B or A 5.5 3.2 2.8 2.6 ns
ten(2) Enable time C A or B 2.5 14 1.9 9.5 1.8 8 1.5 7.2 ns
tdis(3) Disable time C A or B 2.2 12 1.4 8.9 2 8.4 1.4 6.9 ns
(1) tPLH and tPHL are the same as tpd. The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
(2) tPZL and tPZH are the same as ten.
(3) tPLZ and tPHZ are the same as tdis.

6.7 Analog Switch Characteristics

TA = 25°C
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TEST
CONDITIONS		 VCC TYP UNIT
Frequency response(1)
(switch ON)		 A or B B or A CL = 50 pF, RL = 600 Ω,
fin = sine wave
(see Figure 6)		 1.65 V 35 MHz
2.3 V 120
3 V 175
4.5 V 195
CL = 5 pF, RL = 50 Ω,
fin = sine wave
(see Figure 6)		 1.65 V >300
2.3 V >300
3 V >300
4.5 V >300
Crosstalk
(control input to signal output)		 C A or B CL = 50 pF, RL = 600 Ω,
fin = 1 MHz (square wave)
(see Figure 7)		 1.65 V 35 mV
2.3 V 50
3 V 70
4.5 V 100
Feedthrough attenuation(2)
(switch OFF)		 A or B B or A CL = 50 pF, RL = 600 Ω,
fin = 1 MHz (sine wave)
(see Figure 8)		 1.65 V –58 dB
2.3 V –58
3 V –58
4.5 V –58
CL = 5 pF, RL = 50 Ω,
fin = 1 MHz (sine wave)
(see Figure 8)		 1.65 V –42
2.3 V –42
3 V –42
4.5 V –42
Sine-wave distortion A or B B or A CL = 50 pF, RL = 10 kΩ,
fin = 1 kHz (sine wave)
(see Figure 9)		 1.65 V 0.1%
2.3 V 0.025%
3 V 0.015%
4.5 V 0.01%
CL = 50 pF, RL = 10 kΩ,
fin = 10 kHz (sine wave)
(see Figure 9)		 1.65 V 0.15%
2.3 V 0.025%
3 V 0.015%
4.5 V 0.01%
(1) Adjust fin voltage to obtain 0 dBm at output. Increase fin frequency until dB meter reads –3 dB.
(2) Adjust fin voltage to obtain 0 dBm at input.

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST
CONDITIONS		 VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V UNIT
TYP TYP TYP TYP
Cpd Power dissipation capacitance f = 10 MHz  8 9 9 11 pF

6.9 Typical Characteristics

TA = 25°C
SN74LVC1G66-Q1 pmi2_ces323.gifFigure 1. Typical ron as a Function of Input Voltage (VI) for VI = 0 to VCC