ZHCSNT1J February   1997  – August 2022 SN65220 , SN65240 , SN75240

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 支持资源
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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10.2.2 Detailed Design Procedure

To effectively protect USB transceivers, use TVS diodes with breakdown voltages close to 6 V, such as the SN65220, SN65240, or SN75220 devices.

Because of the TVS junction capacitance of 35 pF, apply these TVS diodes only to USB transceivers with full-speed capability that is 12 Mbps maximum.

Place the TVS diodes as close to the board connector as possible to prevent transient energies from entering further board space.

Connect the TVS diode between the data lines (D+, D–) and local circuit ground (GND).

Because noise transient represents high-speed frequencies, ensure low-inductance return paths for the transient currents by providing a solid ground plane and using two VIAs connecting the TVS terminals to ground.