ZHCSFE9 August   2016 OPA857-DIE

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4静电放电警告
  5. 5Bare Die Information

封装选项

机械数据 (封装 | 引脚)
  • TD|0
散热焊盘机械数据 (封装 | 引脚)
订购信息

Bare Die Information

DIE THICKNESS BACKSIDE FINISH BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION COMPOSITION
BOND PAD
THICKNESS
15 mils. Silicon with backgrind GND TiW/AlCu (0.5%) 1100 nm
OPA857-DIE Die_SBOS813.gif

Bond Pad Coordinates in Microns

NAME PAD NUMBER X MIN Y MIN X MAX Y MAX DESCRIPTION
GND 1 15 637 90 712 Ground
CTRL 2 15 465 90 540 Control pin for transimpedance gain. GND, logic 0 = 5-kΩ internal resistance; +VS, logic 1 = 20-kΩ internal resistance.
GND 3 15 315 90 390 Ground
GND 4 15 165 90 240 Ground
OUTN 5 15 15 90 90 Common-mode voltage output reference
GND 6 165 15 240 90 Ground
GND 7 465 15 540 90 Ground
OUT 8 615 15 690 90 Signal output
+VS 9 615 165 690 240 Supply voltage
+VS 10 615 315 690 390 Supply voltage
+VS 11 615 465 690 540 Supply voltage
GND 12 615 637 690 712 Ground
TESD_SD 13 493.7 637 568.7 712 Test mode enable. Connect to GND for normal operation, and connect to +VS to enable test mode.
TEST_IN 14 343.7 637 418.7 712 Test mode input. Connect to +VS during normal operation.
IN 15 193.7 561.95 268.7 636.95 Input