ZHCSOM9C January   2006  – January 2023 MAX3222E

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2.     ESD Ratings
    3.     ESD Ratings - IEC Specifications
    4. 6.2 Recommended Operating Conditions
    5. 6.3 Thermal Information
    6. 6.4 Electrical Characteristics
    7. 6.5 Electrical Characteristics: Driver
    8. 6.6 Switching Characteristics: Driver
    9. 6.7 Electrical Characteristics: Receiver
    10. 6.8 Switching Characteristics: Receiver
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
    2. 8.2 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 商标
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Switching Characteristics: Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 9-1)
PARAMETER TEST CONDITIONS(3) MIN TYP(1) MAX UNIT
Maximum data rate CL = 1000 pF,
One DOUT switching,		 RL = 3 kΩ,
See Figure 7-1		 250 500 kbit/s
tsk(p) Pulse skew(2) CL = 150 pF to 2500 pF,
See Figure 7-2		 RL = 3 kΩ to 7 kΩ, 300 ns
SR(tr) Slew rate,
transition region
(see Figure 7-1)		 RL = 3 kΩ to 7 kΩ,
VCC = 3.3 V		 CL = 150 pF to 1000 pF 6 30 V/μs
CL = 150 pF to 2500 pF 4 30
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH – tPHL| of each channel of the same device.
(3) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.