ZHCSJK1G November   2002  – May 2019 LM2733

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      典型应用电路
      2.      效率与负载电流间的关系
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switching Frequency
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Pin Operation
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Selecting the External Capacitors
        2. 8.2.2.2  Selecting the Output Capacitor
        3. 8.2.2.3  Selecting the Input Capacitor
        4. 8.2.2.4  Feedforward Compensation
        5. 8.2.2.5  Selecting Diodes
        6. 8.2.2.6  Setting the Output Voltage
        7. 8.2.2.7  Switching Frequency
        8. 8.2.2.8  Duty Cycle
        9. 8.2.2.9  Inductance Value
        10. 8.2.2.10 Maximum Switch Current
        11. 8.2.2.11 Calculating Load Current
        12. 8.2.2.12 Design Parameters VSW and ISW
        13. 8.2.2.13 Thermal Considerations
        14. 8.2.2.14 Minimum Inductance
        15. 8.2.2.15 Inductor Suppliers
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 商标
    2. 11.2 静电放电警告
    3. 11.3 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Design Parameters VSW and ISW

The value of the FET "ON" voltage (referred to as VSW in the equations) is dependent on load current. A good approximation can be obtained by multiplying the "ON Resistance" of the FET times the average inductor current.

FET on resistance increases at VIN values below 5 V, since the internal N-FET has less gate voltage in this input voltage range (see Typical Characteristics). Above VIN = 5 V, the FET gate voltage is internally clamped to 5 V.

The maximum peak switch current the device can deliver is dependent on duty cycle. The minimum value is specified to be > 1 A at duty cycle below 50%. For higher duty cycles, see Typical Characteristics.