ZHCSI85A May   2018  – July 2019 LM26420-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      LM26420 双路降压直流/直流转换器
      2.      LM26420 效率（高达 93%）
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions: 16-Pin WQFN
    2.     Pin Functions 20-Pin HTSSOP
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics Per Buck
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft Start
      2. 7.3.2 Power Good
      3. 7.3.3 Precision Enable
    4. 7.4 Device Functional Modes
      1. 7.4.1 Output Overvoltage Protection
      2. 7.4.2 Undervoltage Lockout
      3. 7.4.3 Current Limit
      4. 7.4.4 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Programming Output Voltage
      2. 8.1.2 VINC Filtering Components
      3. 8.1.3 Using Precision Enable and Power Good
      4. 8.1.4 Overcurrent Protection
    2. 8.2 Typical Applications
      1. 8.2.1 2.2-MHz, 0.8-V Typical High-Efficiency Application Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 8.2.1.2.2 Inductor Selection
          3. 8.2.1.2.3 Input Capacitor Selection
          4. 8.2.1.2.4 Output Capacitor
          5. 8.2.1.2.5 Calculating Efficiency and Junction Temperature
        3. 8.2.1.3 Application Curves
      2. 8.2.2 2.2-MHz, 1.8-V Typical High-Efficiency Application Circuit
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
      3. 8.2.3 LM26420-Q12.2-MHz, 2.5-V Typical High-Efficiency Application Circuit
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Method 1: Silicon Junction Temperature Determination
      2. 10.3.2 Thermal Shutdown Temperature Determination
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 使用 WEBENCH® 工具创建定制设计
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.3.1 Method 1: Silicon Junction Temperature Determination

To accurately measure the silicon temperature for a given application, two methods can be used. The first method requires the user to know the thermal impedance of the silicon junction to top case temperature.

Some clarification needs to be made before we go any further.

RθJC is the thermal impedance from silicon junction to the exposed pad.

RθJT is the thermal impedance from top case to the silicon junction.

In this data sheet RθJT is used so that it allows the user to measure top case temperature with a small thermocouple attached to the top case.

RθJT is approximately 20°C/W for the 16-pin WQFN package with the exposed pad. Knowing the internal dissipation from the efficiency calculation given previously, and the case temperature, which can be empirically measured on the bench we have:

Equation 37. LM26420-Q1 TopCaseThermal.gif

Therefore:

Equation 38. TJ = (RθJT × PINTERNAL) + TC

From the previous example:

Equation 39. TJ = 20°C/W × 0.304W + TC