ZHCSSZ1E November   2010  – August 2023 ISO35T

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1.     Pin Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics: Driver
    10. 6.10 Electrical Characteristics: Receiver
    11. 6.11 Supply Current
    12. 6.12 Transformer Driver Characteristics
    13. 6.13 Switching Characteristics: Driver
    14. 6.14 Switching Characteristics: Receiver
    15. 6.15 Insulation Characteristics Curves
    16. 6.16 Typical Characteristics
  8. 7 Parameter Measurement Information
    1.     26
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 Device I/O Schematics
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Transient Voltages
      3. 9.2.3 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 静电放电警告
    5. 12.5 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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6.9 Electrical Characteristics: Driver

All typical specs are at VCC1=3.3V, VCC2=5V, TA=27°C, (Min/Max specs are over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|VOD| Driver differential-output voltage magnitude
IO = 0 mA, no load
 		 2.5 VCC2 V

RL = 54 Ω, See Figure 11
 		 1.5 2 V

RL = 100 Ω (RS-422), See Figure 11
 		 2 2.3 V

Vtest from –7 V to +12 V, See Figure 12
 		 1.5 V
Δ|VOD| Change in differential output voltage between two states
See Figure 11 and Figure 12
 		 –200 200 mV
VOC(SS) Common-mode output voltage
See Figure 13
 		 1 2.6 3 V
ΔVOC(SS) change in steady-state common-mode output voltage between two states
See Figure 13
 		 –100 100 mV
VOC(PP) Peak-to-peak common-mode output voltage
See Figure 13
 		 0.5 V
II Input current
D, DE, VI at 0 V or VCC1
 		 –10 10 µA
IOZ High-impedance state output current VY or VZ = 12 V, VCC = 0V or 3V, DE = 0V; other input at 0 V 90 µA
VY or VZ = -7 V, VCC = 0V or 3V, DE = 0V; other input at 0 V -10 µA
IOS(P)(1) Short-circuit output current VY or VZ = –7 V to +12 V, Figure 14; Other input at 0 V 300 mA
IOS(ss)(1) Short-circuit output current
VY or VZ = –7 V to +12 V, Figure 14; Other input at 0 V
 		 –250 250 mA
COD
Differential output capacitance
VI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
 		 16 pF
(1) This device has thermal shutdown and output current-limiting features to protect in short-circuit fault condition.