ZHCSW26B September   2000  – April 2024 INA117

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Typical Characteristics
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Common-mode Rejection
      2. 7.1.2 Transfer Function
      3. 7.1.3 Measuring Current
      4. 7.1.4 Noise Performance
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • P|8
  • LMC|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics

at TA = 25°C, VS = ±15V, RL = 10kΩ, VREF = 0V, VCM = VS/2, and G = 1 (unless otherwise noted)
PARAMETER TEST CONDITIONS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOS Offset voltage   RTO (P package) 120 1000 µV
RTO (KU package) 600 2000 µV
Offset voltage drift  RTO, TA = –40℃ to 85℃ 8.5 µV/°C
Long term drift 200 µV/mo
PSRR Power-supply rejection ratio  RTO, VS =  ±5V to ±18V 74 90 dB
Common-mode voltage (1) –200 200 V
Differential voltage –10 10 V
CMRR Common-mode voltage rejection DC, VCM = –200V to 200V 70 80 dB
TA = –40℃ to 85℃ 75
AC, 60Hz, VCM = –200V to 200V 66 80
Differential input impedance 800 kΩ
Common-mode input impedance 200
NOISE
eN Voltage noise RTO, fB = 0.1Hz to 10Hz 25 µVPP 
RTO, f = 1kHz 550 nV/√Hz
GAIN
GE Gain error ±0.01 ±0.05 %
Gain error drift TA = –40°C to 85°C  ±2 ppm/°C
Gain nonlinearity(2) ±0.0005 ±0.001 % of FSR
OUTPUT
Output voltage IO = 20mA, –5mA 10 12 V
Output impedance 0.01 Ω
CL Load capacitance Stable operation 1 nF
Short-circuit current Continuous to VS/2 49, –13 mA
FREQUENCY RESPONSE
BW Bandwidth, –3dB 200 kHz
Full power bandwidth VO = 20Vpp 30 kHz
SR Slew rate 1.7 2.6 V/µs
tS Settling time To 0.1%,  VO = 10V step 6.5 µs
To 0.01% VO = 10V step 10
VCM = 10V step, VDIFF = 0V 4.5
POWER SUPPLY
IQ Quiescent current VIN = 0V 1.5 ±2 mA
(2) Input common-mode voltage varies with output voltage; see Typical Characteristics.
(3) Specified by wafer test.