ZHCSGB3A June   2017  – August 2018 ESD122

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     USB Type-C 应用示例
      1.      Device Images
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  IEC 61000-4-2 ESD Protection
      2. 7.3.2  IEC 61000-4-4 EFT Protection
      3. 7.3.3  IEC 61000-4-5 Surge Protection
      4. 7.3.4  IO Capacitance
      5. 7.3.5  DC Breakdown Voltage
      6. 7.3.6  Ultra Low Leakage Current
      7. 7.3.7  Low ESD Clamping Voltage
      8. 7.3.8  Supports High Speed Interfaces
      9. 7.3.9  Industrial Temperature Range
      10. 7.3.10 Easy Flow-Through Routing Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 USB 3.1 Gen 2 Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Signal Range
          2. 8.2.1.2.2 Operating Frequency
        3. 8.2.1.3 Application Curves
      2. 8.2.2 HDMI 2.0 Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Signal Range
          2. 8.2.2.2.2 Operating Frequency
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4 Device Functional Modes

The ESD122 is a passive circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±17 kV (contact) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of ESD122 (usually within 10s of nano-seconds) the device reverts to passive.

Figure 12 shows typical TLP behavior of bi-directional ESD device.

ESD122 TLP_Curve.gifFigure 12. Generic TLP I-V Curve for a Bi-Directional ESD Device
for the Illustration of Vrwm, VBR, Vhold and Vclamp