ZHCSME1C August   2018  – June 2021 DS250DF230

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Data Path Operation
      2. 8.3.2  Signal Detect
      3. 8.3.3  Continuous Time Linear Equalizer (CTLE)
      4. 8.3.4  Variable Gain Amplifier (VGA)
      5. 8.3.5  Cross-Point Switch
      6. 8.3.6  Decision Feedback Equalizer (DFE)
      7. 8.3.7  Clock and Data Recovery (CDR)
        1. 8.3.7.1 CDR Bypass (Raw) Mode
        2. 8.3.7.2 CDR Fast Lock Mode
      8. 8.3.8  Calibration Clock
      9. 8.3.9  Differential Driver With FIR Filter
        1. 8.3.9.1 Setting the Output VOD, Pre-Cursor, and Post-Cursor Equalization
        2. 8.3.9.2 Output Driver Polarity Inversion
        3. 8.3.9.3 Slow Slew Rate
      10. 8.3.10 Debug Features
        1. 8.3.10.1 Pattern Generator
        2. 8.3.10.2 Pattern Checker
        3. 8.3.10.3 Eye-Opening Monitor
      11. 8.3.11 Interrupt Signals
    4. 8.4 Device Functional Modes
      1. 8.4.1 Supported Data Rates
      2. 8.4.2 SMBus Master Mode
      3. 8.4.3 Device SMBus Address
    5. 8.5 Programming
      1. 8.5.1 Bit Fields in the Register Set
      2. 8.5.2 Writing to and Reading from the Global/Shared/Channel Registers
    6. 8.6 Register Maps
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Front-Port Jitter Cleaning Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Active Cable Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Backplane and Mid-Plane Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
  13. 13Electrostatic Discharge Caution
  14. 14术语表
  15. 15Mechanical, Packaging, and Orderable Information

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Layout Guidelines

Follow these guidelines when designing the layout:

  1. Decoupling capacitors must be placed as close to the VDD pins as possible. Placing them directly underneath the device is one option if the board design permits.
  2. High-speed differential signals TXnP/TXnN and RXnP/RXnN must be tightly coupled, skew matched, and impedance controlled.
  3. Vias must be avoided when possible on the high-speed differential signals. When vias must be used, take care to minimize the via stub, either by transitioning through most or all layers, or by back drilling.
  4. GND relief can be used beneath the high-speed differential signal pads to improve signal integrity by counteracting the pad capacitance.
  5. GND relief can be used beneath the AC-coupling capacitor pads to improve signal integrity by counteracting the pad capacitance.
  6. GND vias must be placed directly beneath the device connecting the GND plane attached to the device to the GND planes on other layers. This has the added benefit of improving thermal conductivity from the device to the board.
  7. If vias are used for the high-speed signals, the ground via must be implemented adjacent to the signal via to provide return path and isolation. For differential pair, the typical via configuration is ground-signal-signal-ground.