ZHCSNT9K July   2008  – March 2021 DRV8800 , DRV8801

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1  Logic Inputs
      2. 8.3.2  VREG (DRV8800 Only)
      3. 8.3.3  VPROPI (DRV8801 Only)
        1. 8.3.3.1 Connecting VPROPI Output to ADC
      4. 8.3.4  Charge Pump
      5. 8.3.5  Shutdown
      6. 8.3.6  Low-Power Mode
      7. 8.3.7  Braking
      8. 8.3.8  Diagnostic Output
      9. 8.3.9  Thermal Shutdown (TSD)
      10. 8.3.10 Overcurrent Protection
      11. 8.3.11 SENSE
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Operation
        1. 8.4.1.1 Slow-Decay SR (Brake Mode)
        2. 8.4.1.2 Fast Decay With Synchronous Rectification
          1. 8.4.1.2.1 34
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Motor Voltage
        2. 9.2.2.2 Power Dissipation
        3. 9.2.2.3 Thermal Considerations
          1. 9.2.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
        4. 9.2.2.4 Motor Current Trip Point
        5. 9.2.2.5 Sense Resistor Selection
        6. 9.2.2.6 Drive Current
      3. 9.2.3 Pulse-Width Modulating
        1. 9.2.3.1 Pulse-Width Modulating ENABLE
        2. 9.2.3.2 Pulse-Width Modulating PHASE
      4. 9.2.4 Application Curves
    3. 9.3 Parallel Configuration
      1. 9.3.1 Parallel Connections
      2. 9.3.2 Non – Parallel Connections
      3. 9.3.3 Wiring nFAULT as Wired OR
      4. 9.3.4 Electrical Considerations
        1. 9.3.4.1 Device Spacing
        2. 9.3.4.2 Recirculation Current Handling
        3. 9.3.4.3 Sense Resistor Selection
        4. 9.3.4.4 Maximum System Current
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 静电放电警告
    4. 12.4 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision J (July 2014) to Revision K (March 2021)

  • Added missing GND pin reference to Pin Functions Table Go
  • Added SENSE pin to Pin Functions Table Go
  • Improved description for pins nFAULT, nSLEEP, VBB and VCP in Pin Functions Table Go
  • Added entries for VCP and CP2 pins in Absolute Maximum Ratings tableGo
  • Added VDD pin voltage limits and device’s PWM frequency limits to Recommended Operation Conditions tableGo
  • Changed SLEEP to nSLEEP in PWM Control Timing FigureGo
  • Added equation for VPROPI to help when connecting pin’s output to ADC in Feature Description Go
  • Provide additional information on SENSE pin behaviorGo
  • Added device specific details to Control Logic Table Go
  • Added die temperature estimation equation utilizing junction to ambient thermal impedance in Application and Implementation sectionGo
  • Added information on using motor driver’s pulse width modulating modes in Application and Implementation sectionGo

Changes from Revision I (January 2014) to Revision J (July 2014)

  • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

Changes from Revision H (November 2013) to Revision I (January 2014)

  • Added IOCP to ELECTRICAL CHARACTERISTICSGo
  • Changed Parameter Measurement Information Go

Changes from Revision G (October 2013) to Revision H (November 2013)

  • Changed maximum junction temperature from 190°C to 150°CGo
  • Changed VTRP description/test conditionsGo
  • Changed Protection Circuitry sectionGo
  • Changed Note in SENSE sectionGo