ZHCSG01C February   2017  – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—32-Pin DRV8320 Devices
    2.     Pin Functions—40-Pin DRV8320R Devices
    3.     Pin Functions—40-Pin DRV8323 Devices
    4.     Pin Functions—48-Pin DRV8323R Devices
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 8.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current Sense Amplifiers (DRV8323 and DRV8323R Only)
        1. 8.3.4.1 Bidirectional Current Sense Operation
        2. 8.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 8.3.4.3 Auto Offset Calibration
        4. 8.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 8.3.5 Step-Down Buck Regulator
        1. 8.3.5.1 Fixed Frequency PWM Control
        2. 8.3.5.2 Bootstrap Voltage (CB)
        3. 8.3.5.3 Output Voltage Setting
        4. 8.3.5.4 Enable nSHDN and VIN Undervoltage Lockout
        5. 8.3.5.5 Current Limit
        6. 8.3.5.6 Overvoltage Transient Protection
        7. 8.3.5.7 Thermal Shutdown
      6. 8.3.6 Gate Driver Protective Circuits
        1. 8.3.6.1 VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.6.2 VCP Charge Pump Undervoltage Lockout (CPUV)
        3. 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.6.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.6.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 8.3.6.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 8.3.6.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 8.3.6.5 Gate Driver Fault (GDF)
        6. 8.3.6.6 Thermal Warning (OTW)
        7. 8.3.6.7 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
      2. 8.4.2 Buck Regulator Functional Modes
        1. 8.4.2.1 Continuous Conduction Mode (CCM)
        2. 8.4.2.2 Eco-mode Control Scheme
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. Table 1. DRV832xS and DRV832xRS Register Map
      2. 8.6.1    Status Registers
        1. 8.6.1.1 Fault Status Register 1 (address = 0x00)
          1. Table 11. Fault Status Register 1 Field Descriptions
        2. 8.6.1.2 Fault Status Register 2 (address = 0x01)
          1. Table 12. Fault Status Register 2 Field Descriptions
      3. 8.6.2    Control Registers
        1. 8.6.2.1 Driver Control Register (address = 0x02)
          1. Table 14. Driver Control Field Descriptions
        2. 8.6.2.2 Gate Drive HS Register (address = 0x03)
          1. Table 15. Gate Drive HS Field Descriptions
        3. 8.6.2.3 Gate Drive LS Register (address = 0x04)
          1. Table 16. Gate Drive LS Register Field Descriptions
        4. 8.6.2.4 OCP Control Register (address = 0x05)
          1. Table 17. OCP Control Field Descriptions
        5. 8.6.2.5 CSA Control Register (DRV8323x Only) (address = 0x06)
          1. Table 18. CSA Control Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
          4. 9.2.1.2.4 Sense Amplifier Bidirectional Configuration (DRV8323 and DRV8323R)
            1. 9.2.1.2.4.1 Example
          5. 9.2.1.2.5 Buck Regulator Configuration (DRV8320R and DRV8323R)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Alternative Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Sense Amplifier Unidirectional Configuration
            1. 9.2.2.2.1.1 Example
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Buck-Regulator Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 器件命名规则
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 相关链接
    4. 12.4 接收文档更新通知
    5. 12.5 社区资源
    6. 12.6 商标
    7. 12.7 静电放电警告
    8. 12.8 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control

The TDRIVE component is an integrated gate drive state machine that provides automatic dead time insertion through handshaking between the high-side and low-side gate drivers, parasitic dV/dt gate turnon prevention, and MOSFET gate fault detection.

The first component of the TDRIVE state machine is automatic dead time insertion. Dead time is period of time between the switching of the external high-side and low-side MOSFETs to make sure that they do not cross conduct and cause shoot-through. The DRV832x family of devices uses VGS voltage monitors to measure the MOSFET gate-to-source voltage and determine the correct time to switch instead of relying on a fixed time value. This feature lets the dead time of the gate driver adjust for variation in the system such as temperature drift and variation in the MOSFET parameters. An additional digital dead time (tDEAD) can be inserted and is adjustable through the registers on SPI devices.

The second component of the TDRIVE state machine is parasitic dV/dt gate turnon prevention. To implement this component, the TDRIVE state machine enables a strong pulldown current (ISTRONG) on the opposite MOSFET gate whenever a MOSFET is switching. The strong pulldown occurs for the TDRIVE duration. This feature helps remove parasitic charge that couples into the MOSFET gate when the voltage half-bridge switch node slews rapidly.

The third component of the TDRIVE state machine implements a scheme for gate fault detection to detect pin-to-pin solder defects, a MOSFET gate failure, or stuck-high or stuck-low voltage condition on a MOSFET gate. This implementation occurs with a pair of VGS gate-to-source voltage monitors for each half-bridge gate driver. When the gate driver receives a command to change the state of the half-bridge, it starts to monitor the gate voltage of the external MOSFET. If the VGS voltage has not reached the correct threshold at the end of the tDRIVE period,, the gate driver reports a fault. To make sure that a false fault is not detected, a tDRIVE time should be selected that is longer than the time required to charge or discharge the MOSFET gate. The tDRIVE time does not increase the PWM time and will terminate if another PWM command is received while active. For additional details on the TDRIVE settings, see the Register Maps section for SPI devices. The hardware interface devices have a fixed tDRIVE of 4 µs.

Figure 27 shows an example of the TDRIVE state machine in operation.

DRV8320 DRV8320R DRV8323 DRV8323R drv832xx_idrive_tdrive.gifFigure 27. TDRIVE State Machine