ZHCSE35 August   2015 DRV8305

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Three-Phase Gate Driver
      2. 7.3.2  Operating Modes
      3. 7.3.3  Charge Pump
      4. 7.3.4  Gate Driver Architecture
      5. 7.3.5  IDRIVE/TDRIVE
      6. 7.3.6  Slew Rate/Slope Control
      7. 7.3.7  Current Shunt Amplifiers
      8. 7.3.8  Internal Regulators (DVDD and AVDD)
      9. 7.3.9  Voltage Regulator Output for Driving External Loads (VREG)
      10. 7.3.10 Protection Features
        1. 7.3.10.1 Fault and Protection Handling
        2. 7.3.10.2 Shoothrough Protection
        3. 7.3.10.3 VDS Sensing - External FET Protection and Reporting (OC Event)
        4. 7.3.10.4 Low-Side Source Monitoring (SNS_OCP)
      11. 7.3.11 Undervoltage Reporting and Undervoltage Lockout (UVLO) Protection
        1. 7.3.11.1 Battery Overvoltage Protection (PVDD_OV)
        2. 7.3.11.2 Charge Pump Overvoltage Protection (VCPH_OV/VCP_LSD_OV)
        3. 7.3.11.3 Overtemperature (OT) Warning and Protection
        4. 7.3.11.4 dV/dt Protection
        5. 7.3.11.5 VGS Protection
        6. 7.3.11.6 Gate Driver Faults
        7. 7.3.11.7 Reverse Battery Protection
        8. 7.3.11.8 MCU Watchdog
      12. 7.3.12 Pin Control Functions
        1. 7.3.12.1 EN_GATE
        2. 7.3.12.2 SPI Pins
      13. 7.3.13 Fault / Warning Classes and Recovery
        1. 7.3.13.1 Reg 09h CLR_FLTS
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up and Operating States Hardware Configuration for VREG/VREF
        1. 7.4.1.1 POWER Up
        2. 7.4.1.2 STANDBY State
        3. 7.4.1.3 OPERATING State
        4. 7.4.1.4 SLEEP State
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Status Registers
      3. 7.6.3 0x1 Warning and Watchdog Reset
      4. 7.6.4 0x2 OV/VDS Faults
      5. 7.6.5 0x3 IC Faults
      6. 7.6.6 0x4 Gate Driver VGS Faults
      7. 7.6.7 Control Registers
        1. 7.6.7.1 HS Gate Driver Control (address = 0x5)
        2. 7.6.7.2 LS Gate Driver Control (address = 0x6)
        3. 7.6.7.3 Gate Drive Control (address = 0x7)
        4. 7.6.7.4 IC Operation (address = 0x9)
        5. 7.6.7.5 Shunt Amplifier Control (address = 0xA)
        6. 7.6.7.6 Voltage Regulator Control (address = 0xB)
        7. 7.6.7.7 VDS Sense Control (address = 0xC)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage (PVDD) –0.3 45 V
Power supply voltage ramp rate (VM) 0 2 V/µs
Charge pump voltage (CP1H,CP1L, CP2L,CP2H, VCPH, VCP_LSD) –0.3 PVDD + 12 V
High side gate driver voltage (GHA, GHB, GHC) –3 57 V
Low-side gate driver voltage (GHA, GHB, GHC) –2 12 V
High side gate driver source pin voltage (SHA, SHB, SHC) –5 45 V
Low-side gate driver source pin voltage (SLA, SLB, SLC) –3 5 V
Internal phase clamp pin voltage difference {(GHA-SHA), (GHB-SHB), (GHC-SHC), (GLA-SLA), (GLB-SLB), (GLC-SLC)} –0.3 15 V
Drain pin voltage drain (VDRAIN) –0.3 45 V
Max source current (VDRAIN) – limit current with external series resistor –20 mA
Max sink current (VDRAIN) 2 mA
Voltage difference between supply and VDRAIN (PVDD-VDRAIN) –10 10 V
Control pin voltage range (INHA, INLA, INHB, INLB, INHC, INLC, EN_GATE, SCLK, SDI, SCS, SDO, nFAULT, PWRGD) –0.3 5.5 V
Open drain pins skink current (nFAULT, PWRGD) 7 mA
Wake pin voltage (WAKE) –0.3 45 V
Wake pin sink current (WAKE) – limit with external series resistor 1 mA
Sense amp voltage (SPA, SNA, SPB, SNB, SPC, SNC) –2 5 V
Externally applied reference voltage (VREG) – when vreg_vref = 1 –0.3 5.5 V
Externally applied reference sink current (VREG) – when vreg_vref = 1 100 µA
Operating ambient temperature, TA –40 125 °C
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VPVDD Power supply voltage range 4.4 45 (1) V
VPVDD Power supply voltage range for voltage regulator operation 4.3 45 (2) V
VPVDDRAMP Power supply voltage ramp rate (PVDD = 0 to 20 V rising <3-mA pin sink current) 1 V/µs
VPVDD-SH_X Total voltage drop from PVDD to SH_X pins 4.5 V
ISRC_VCPH External load on VCPH pin (current limit resistor in series to load) 10 mA
CO_OPA Maximum external capacitive load on shunt amplifier (no external resistor on output, excluding internal pin capacitance) 60 pF
InFAULT nFAULT sink current (VnFAULT = 0.3 V) 7 mA
Fgate Operating switching frequency of gate driver 200 kHz
IGATE Total average gate driver current (HS + LS) – charge pump limited 30 mA
TA Operating ambient temperature -40 125 °C
(1) IC is fully functional and tested in the range 4.4 to 45 V.
(2) Subject to thermal dissipation limits.

6.4 Thermal Information

THERMAL METRIC (1) DRV8305 UNIT
PHP (HTQFP)
48 PINS
RθJA Junction-to-ambient thermal resistance 26.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 12.9 °C/W
RθJB Junction-to-board thermal resistance 7.6 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 7.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

PVDD = 4.4 to 45 V, TJ = –40°C to 150°C, unless specified under test condition
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (PVDD, DVDD, AVDD)
VPVDD PVDD operating voltage 4.4 45 V
VREG (voltage regulator) operational 4.3 45
IPVDD_Operating PVDD operating supply current EN_GATE = enabled; LDO reg = enabled at no load; outputs HiZ 15 mA
IPVDD_Standby PVDD standby supply current EN_GATE = disabled; LDO reg = enabled at no load 4 7 mA
IPVDD_Sleep PVDD sleep supply current EN_GATE = disabled; LDO reg = disabled; ready for WAKE 60 175 μA
VAVDD Internal regulator voltage PVDD = 5.3 to 45 V 4.85 5 5.15 V
PVDD = 4.4 to 5.3 V PVDD – 0.22 PVDD
VDVDD Internal regulator voltage 3.3 V
VOLTAGE REGULATOR (VREG)
VVREG VREG DC output voltage PVDD = 5.3 to 45 V VSET – (0.03 × VSET) VSET VSET + (0.03 × VSET) V
PVDD = 4.3 to 5.3 V; 5-V regulator PVDD – 0.4 V PVDD
PVDD = 4.3 to 5.3 V; 3.3-V regulator VSET – (0.03 × VSET) VSET VSET + (0.03 × VSET)
VLineReg Line regulation ΔVOUT/ΔVIN 5.3 V ≤ VIN ≤ 12 V; IO = 1 mA 10 30 mV
VLoadReg Load regulation ΔVOUT/ΔIOUT 100 µA ≤ IOUT ≤ 50 mA 30 mV
Vdo Dropout voltage IOUT = 100 µA; 3.3 V 0.05 0.1 V
IOUT = 50 mA; 3.3 V 0.2 0.4
LOGIC-LEVEL INPUTS (INHA, INLA, INHB, INLB, INHC, INLC, EN_GATE, SCLK, nSCS)
VIL Input logic low voltage 0 0.8 V
VIH Input logic high voltage 2 5 V
RPD Internal pull down resistor To GND 100 kΩ
CONTROL OUTPUTS (nFAULT, SDO, PWRGD)
VOL Output logic low voltage IO = 5 mA 0.5 V
VOH Output logic high voltage 2.4 V
IOH Output logic high leakage VO = 3.3 V –1 1 μA
HIGH VOLTAGE TOLERANT LOGIC INPUT (WAKE)
VIL_WAKE Output logic low voltage 1.1 1.41 V
VIH_WAKE Output logic high voltage 1.42 1.75 V
GATE DRIVE OUTPUT (GHA, GHB, GHC, GLA, GLB, GLC)
VGHS High side gate driver Vgs voltage VPVDD = 8 to 45 V; IGATE < 30 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 9 10 10.5 V
VPVDD = 5.5 to 8 V; IGATE < 6 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 7.2 9
VPVDD = 4.4 to 5.5 V; IGATE < 6 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 5 7.2
VGLS Low-side gate driver Vgs voltage VPVDD = 8 to 45 V; IGATE < 30 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 9 10 10.5 V
VPVDD = 5.5 to 8 V; IGATE < 6 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 9 10.5
VPVDD = 4.4 to 5.5 V; IGATE < 6 mA, CVCPH = 2.2 μF, CCP1/CP2 = 0.047 μF, CVCP_LSD = 1 μF 8 9
PEAK CURRENT DRIVE TIMES
tDRIVE Peak sink or source current drive time TDRIVEP = 00; TDRIVEN = 00 220 ns
TDRIVEP = 01; TDRIVEN = 01 440
TDRIVEP = 10; TDRIVEN = 10 880
TDRIVEP = 11; TDRIVEN = 11 1660
HIGH SIDE (GHA, GHB, GHC) PEAK CURRENT GATE DRIVE
IDRIVEP_HS High side peak source current IDRIVEP_HS = 0000 0.01 A
IDRIVEP_HS = 0001 0.02
IDRIVEP_HS = 0010 0.03
IDRIVEP_HS = 0011 0.04
IDRIVEP_HS = 0100 0.05
IDRIVEP_HS = 0101 0.06
IDRIVEP_HS = 0110 0.07
IDRIVEP_HS = 0111 0.125
IDRIVEP_HS = 1000 0.25
IDRIVEP_HS = 1001 0.5
IDRIVEP_HS = 1010 0.75
IDRIVEP_HS = 1011 1
IDRIVEP_HS = 1100, 1101, 1110, 1111 0.05
IDRIVEN_HS High side peak sink current IDRIVEN_HS = 0000 0.02 A
IDRIVEN_HS = 0001 0.03
IDRIVEN_HS = 0010 0.04
IDRIVEN_HS = 0011 0.05
IDRIVEN_HS = 0100 0.06
IDRIVEN_HS = 0101 0.07
IDRIVEN_HS = 0110 0.08
IDRIVEN_HS = 0111 0.25
IDRIVEN_HS = 1000 0.5
IDRIVEN_HS = 1001 0.75
IDRIVEN_HS = 1010 1
IDRIVEN_HS = 1011 1.25
IDRIVEN_HS = 1100, 1101, 1110, 1111 0.06
LOW SIDE (GLA, GLB, GLC) PEAK CURRENT GATE DRIVE
IDRIVEP_LS Low-side peak source current IDRIVEP_HS = 0000 0.01 A
IDRIVEP_HS = 0001 0.02
IDRIVEP_HS = 0010 0.03
IDRIVEP_HS = 0011 0.04
IDRIVEP_HS = 0100 0.05
IDRIVEP_HS = 0101 0.06
IDRIVEP_HS = 0110 0.07
IDRIVEP_HS = 0111 0.125
IDRIVEP_HS = 1000 0.25
IDRIVEP_HS = 1001 0.5
IDRIVEP_HS = 1010 0.75
IDRIVEP_HS = 1011 1
IDRIVEP_HS = 1100, 1101, 1110, 1111 0.05
LOW SIDE (GLA, GLB, GLC) PEAK CURRENT GATE DRIVE
IDRIVEN_LS Low-side peak sink current IDRIVEN_HS = 0000 0.02 A
IDRIVEN_HS = 0001 0.03
IDRIVEN_HS = 0010 0.04
IDRIVEN_HS = 0011 0.05
IDRIVEN_HS = 0100 0.06
IDRIVEN_HS = 0101 0.07
IDRIVEN_HS = 0110 0.08
IDRIVEN_HS = 0111 0.25
IDRIVEN_HS = 1000 0.5
IDRIVEN_HS = 1001 0.75
IDRIVEN_HS = 1010 1
IDRIVEN_HS = 1011 1.25
IDRIVEN_HS = 1100, 1101, 1110, 1111 0.06
GATE PULL DOWN, MOTOR OFF STATE (BRIDGE IN HI-Z)
RSLEEP_PD Gate pull down resistance, SLEEP, under voltage and sleep mode 2 V < PVDD < PVDD_UVLO2
GHX to GND; GLX to GND		 2000 Ω
RSTANDBY_PD Gate pull down resistance, STANDBY, standby mode (Parallel with ISTANDBY_PD) PVDD > PVDD_UVLO2; EN_GATE = low;
GHX to GND; GLX to GND		 750 Ω
IOPERATING_PD Gate pull down current, OPERATING, operating mode PVDD > PVDD_UVLO2; EN_GATE = high;
GHX to SHX; GLX to SLX		 50 mA
GATE PULL DOWN, MOTOR ON STATE (IDRIVE/tdrive)
IHOLD Gate pull down current, holding PVDD > PVDD_UVLO2; EN_GATE = high;
GHX to SHX; GLX to SLX		 50 mA
IPULLDOWN Gate pull down current, strong PVDD > PVDD_UVLO2; EN_GATE = high;
GHX to SHX; GLX to SLX		 1.25 A
GATE TIMING
tpd_lf-O Positive input falling to GHS_x falling PVDD = 12 V; CL = 1 nF; 50% to 50% 200 ns
tpd_lr-O Positive input rising to GHS_x rising PVDD = 12 V; CL = 1 nF; 50% to 50% 200 ns
td_min Minimum dead time after hand shaking 280 ns
tdtp Dead time in addition to td_min DEAD_TIME = 000 35 ns
DEAD_TIME = 001 52
DEAD_TIME = 010 88
DEAD_TIME = 011 440
DEAD_TIME = 100 880
DEAD_TIME = 101 1760
DEAD_TIME = 110 3520
DEAD_TIME = 111 5280
tPD_MATCH Propagation delay matching between high-side and low-side 50 ns
tDT_MATCH Dead time matching 50 ns
CURRENT SHUNT AMPLIFIER
GCSA Current sense amplifier gain GAIN_CSx = 00 10 V/V
GAIN_CSx = 01 20
GAIN_CSx = 10 40
GAIN_CSx = 11 80
GERR Current sense amplifier gain error Input differential > 0.025 V –3% 3%
tSETTLING Current sense amplifier settling time Settling time to 1%; no blanking; TJ = -40 – 150°C, GCSA = 10; Vstep = 0.46 V 300 ns
Settling time to 1%; no blanking; TJ = -40 – 150°C, GCSA = 20; Vstep = 0.46 V 600
Settling time to 1%; no blanking; TJ = -40 – 150°C, GCSA = 40; Vstep = 0.46 V 1.2 µs
Settling time to 1%; no blanking; TJ = -40 – 150°C, GCSA = 80; Vstep = 0.46 V 2.4
VIOS DC input offset GCSA = 10; input shorted; RTI –4 4 mV
VVREF_ERR Reference buffer error (DC) Internal or external VREF –2% 2%
VDRIFTOS Input offset error drift GCSA = 10; input shorted; RTI 10 µV/C
IBIAS Input bias current VIN_COM = 0; SOx open 100 µA
IOFFSET Input bias current offset IBIAS (SNx-SPx); VIN_COM = 0; SOx open 1 µA
VIN_COM Common input mode range –0.15 0.15 V
VIN_DIFF Differential input range -0.48 0.48 V
CMRR Common mode rejection ration External input resistance matched; DC; GCSA = 10 60 80 dB
External input resistance matched; 20 kHz; GCSA = 10 60 80
PSRR Power supply rejection ratio DC (<120 Hz); GCSA = 10 150 dB
20 kHz; GCSA = 10 90
VSWING Output voltage swing PVDD > 5.3 V 0.3 4.7 V
VSLEW Output slew rate GCSA = 10; RL = 0 Ω; CL = 60 pF 5.2 10 V/µs
IVO Output short circuit current SOx shorted to ground 20 mA
UGB Unity gain bandwidth product GCSA = 10 2 MHz
VOLTAGE PROTECTION
VAVDD_UVLO AVDD undervoltage Fault Relative to GND 3.3 3.5 V
VVREG_UV VREG undervoltage Fault VREG_UV_LEVEL = 00 VSET-10% V
VREG_UV_LEVEL = 01 VSET-20%
VREG_UV_LEVEL = 10 VSET-30%
VREG_UV_LEVEL = 11 VSET-30%
VVREG_UV_DGL VREG undervoltage monitor deglitch time 1.5 2 µs
VPVDD_UVFL Undervoltage protection Warning, PVDD PVDD falling 7.7 8.1 V
PVDD rising 7.9 8.3
VPVDD_UVLO1 Undervoltage protection lockout, PVDD PVDD falling 4.1 V
PVDD rising 4.3
VPVDD_UVLO2 Undervoltage protection Fault, PVDD PVDD falling 4.2 4.4 V
PVDD rising 4.4 4.6
VPVDD_OVFL Overvoltage protection Warning, PVDD PVDD falling 33.5 36 V
PVDD rising 32.5 35
VVCPH_UVFL Charge pump under voltage protection Warning, VCPH Relative to PVDD 8 V
VVCPH_UVLO Charge pump under voltage protection Fault, VCPH Relative to PVDD, SET_VCPH_UV = 0 4.5 4.9 V
Relative to PVDD, SET_VCPH_UV = 1 4.2 4.6
VVCP_LSD_UVLO Low-side charge pump under voltage Fault, VCP_LSD Relative to PVDD 6.4 7.5 V
VVCPH_OVLO Charge pump over voltage protection FAULT, VCPH Relative to PVDD 14 18 V
VVCPH_OVLO_ABS Charge pump over voltage protection FAULT, VCPH Relative to GND 60 V
TEMPERATURE PROTECTION
OTW_CLR Junction temperature for resetting over temperature (OT) warning(1) 140 °C
OTW_SET/
OTSD_CLR		 Junction temperature for over temperature warning and resetting over temperature shutdown(1) 155 °C
OTSD_SET Junction temperature for over temperature shutdown(1) 175 °C
TEMPFLAG1 Junction temperature flag setting 1 (no warning)(1) 105 °C
TEMPFLAG2 Junction temperature flag setting 2 (no warning)(1) 125 °C
TEMPFLAG3 Junction temperature flag setting 3 (no warning)(1) 135 °C
TEMPFLAG4 Junction temperature flag setting 4 (no warning)(1) 175 °C
PROTECTION CONTROL
tpd,E-L Delay, error event to all gates low 24 µs
tpd,E-SD Delay, error event to nFAULTx low 7 µs
FET CURRENT PROTECTION (VDS SENSING)
VDS_TRIP Drain-source voltage protection limit VDS_LEVEL = 00000 0.06 V
VDS_LEVEL = 00001 0.068
VDS_LEVEL = 00010 0.076
VDS_LEVEL = 00011 0.086
VDS_LEVEL = 00100 0.097
VDS_LEVEL = 00101 0.109
VDS_LEVEL = 00110 0.123
VDS_LEVEL = 00111 0.138
VDS_LEVEL = 01000 0.155
VDS_LEVEL = 01001 0.175
VDS_LEVEL = 01010 0.197
VDS_LEVEL = 01011 0.222
VDS_LEVEL = 01100 0.25
VDS_LEVEL = 01101 0.282
VDS_LEVEL = 01110 0.317
VDS_LEVEL = 01111 0.358
VDS_LEVEL = 10000 0.403
VDS_LEVEL = 10001 0.454
VDS_LEVEL = 10010 0.511
VDS_LEVEL = 10011 0.576
VDS_LEVEL = 10100 0.648
VDS_LEVEL = 10101 0.73
VDS_LEVEL = 10110 0.822
VDS_LEVEL = 10111 0.926
VDS_LEVEL = 11000 1.043
VDS_LEVEL = 11001 1.175
VDS_LEVEL = 11010 1.324
VDS_LEVEL = 11011 1.491
VDS_LEVEL = 11100 1.679
VDS_LEVEL = 11101 1.892
VDS_LEVEL = 11110 2.131
VDS_LEVEL = 11111 2.131
tVDS VDS sense deglitch time TVDS = 00 0 µs
TVDS = 01 1.75
TVDS = 10 3.5
TVDS = 11 7
tBLANK VDS sense blanking time TBLANK = 00 0 µs
TBLANK = 01 1.75
TBLANK = 10 3.5
TBLANK = 11 7
tVDS_PULSE nFAULT pin reporting pulse stretch length for VDS event 56 µs
PHASE SHORT PROTECTION
VSNSOCP_TRIP Phase short protection limit Fixed voltage 2 V
(1) Specified by design and characterization data

6.6 SPI Timing Requirements (Slave Mode Only)

MIN NOM MAX UNIT
tSPI_READY SPI read after power on PVDD > VPVDD_UVLO1 5 10 ms
tCLK Minimum SPI clock period 100 ns
tCLKH Clock high time 40 ns
tCLKL Clock low time 40 ns
tSU_SDI SDI input data setup time 20 ns
tHD_SDI SDI input data hold time 30 ns
tD_SDO SDO output data delay time, CLK high to SDO valid CL = 20 pF 20 ns
tHD_SDO SDO output hold time 40 ns
tSU_SCS SCS setup time 50 ns
tHD_SCS SCS hold time 50 ns
tHI_SCS SCS minimum high time before SCS active low 400 ns
tACC SCS access time, SCS low to SDO out of high impedance 10 ns
tDIS SCS disable time, SCS high to SDO high impedance 10 ns
DRV8305 tim_SPI_lvscx2.gif Figure 1. SPI Slave Mode Timing Definition
DRV8305 tim_SPI_2_lvscx2.gif Figure 2. SPI Slave Mode Timing Diagram

6.7 Typical Characteristics

DRV8305 D001_SLVSCX2.gif
Figure 3. Standby Current
DRV8305 D003_SLVSCX2.gif
Figure 5. Sleep Current
DRV8305 D002_SLVSCX2.gif
Figure 4. Operating Current
DRV8305 D004_SLVSCX2.gif
Figure 6. VCPH Voltage