ZHCSEY6E March   2013  – January 2023 DRV2667

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Support for Haptic Piezo Actuators
      2. 7.3.2  Flexible Front End Interface
      3. 7.3.3  Ramp Down Behavior
      4. 7.3.4  Low Latency Startup
      5. 7.3.5  Low Power Standby Mode
      6. 7.3.6  Device Reset
      7. 7.3.7  Amplifier Gain
      8. 7.3.8  Adjustable Boost Voltage
      9. 7.3.9  Adjustable Current Limit
      10. 7.3.10 Internal Charge Pump
      11. 7.3.11 Device Protection
        1. 7.3.11.1 Thermal Protection
        2. 7.3.11.2 Overcurrent Protection
        3. 7.3.11.3 Brownout Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 FIFO Mode
        1. 7.4.1.1 Waveform Timeout
      2. 7.4.2 Direct Playback from RAM Mode
      3. 7.4.3 Waveform Synthesis Playback Mode
      4. 7.4.4 Waveform Sequencer
      5. 7.4.5 Analog Playback Mode
      6. 7.4.6 Low Voltage Operation Mode
    5. 7.5 Programming
      1. 7.5.1 Programming the Boost Voltage
      2. 7.5.2 Programming the Boost Current Limit
      3. 7.5.3 Programming the RAM
        1. 7.5.3.1 Accessing the RAM
        2. 7.5.3.2 RAM Format
          1. 7.5.3.2.1 Programming the Waveform Sequencer
      4. 7.5.4 I2C Interface
        1. 7.5.4.1 General I2C Operation
        2. 7.5.4.2 Single-Byte and Multiple-Byte Transfers
        3. 7.5.4.3 Single-Byte Write
        4. 7.5.4.4 Multiple-Byte Write and Incremental Multiple-Byte Write
        5. 7.5.4.5 Single-Byte Read
        6. 7.5.4.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1  Address: 0x00
      2. 7.6.2  Address: 0x01
      3. 7.6.3  Address: 0x02
      4. 7.6.4  Address: 0x03
      5. 7.6.5  Address: 0x04
      6. 7.6.6  Address: 0x05
      7. 7.6.7  Address: 0x06
      8. 7.6.8  Address: 0x07
      9. 7.6.9  Address: 0x08
      10. 7.6.10 Address: 0x09
      11. 7.6.11 Address: 0x0A
      12. 7.6.12 Address: 0x0B
      13. 7.6.13 Address: 0xFF
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Piezo Actuator Selection
        3. 8.2.2.3 Boost Capacitor Selection
        4. 8.2.2.4 Bulk Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Initialization Setup
      1. 8.3.1 Initialization Procedure
      2. 8.3.2 Typical Usage Examples
        1. 8.3.2.1 Single Click or Alert Example
        2. 8.3.2.2 Library Storage Example
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

Application Information

The typical application for a haptic driver is in a touch-enabled system that already has an application processor that makes the decision on when to execute haptic effects.

The DRV2667 device is configured and can be used fully with I2C communication to stream or launch haptic effects. Additionally, the system designer may decide to use the analog input to stream the desired haptic effects.

GUID-F8BE5923-AC72-4DEA-9BE5-AD882B107415-low.gifFigure 8-1 Typical Application Configuration
Table 8-1 Recommended External Components
COMPONENTDESCRIPTIONSPECIFICATIONTYPICAL VALUE
C(VDD)Input capacitorCapacitance1 µF
C(REG)Regulator capacitorCapacitance0.1 µF
C(BST)Boost capacitorCapacitance0.1 µF
CBULKBulk capacitorCapacitance10 µF
C(PUMP)Internal charge pump capacitorCapacitance0.1 µF
C(IN)AC coupling capacitor (optional)Capacitance1 µF
R1Boost feedback resistor
(see Section 7.5.1)
Resistance768 kΩ
R2Boost feedback resistor
(see Section 7.5.1)
Resistance9.76 kΩ
R2Current limit resistor
(see Section 7.5.2)
Resistance13 kΩ
R(PU)Pullup resistorResistance2.2 kΩ
L1Boost inductorInductance3.3 µH