ZHCSFB0D June   2016  – November 2023 DRV2510-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input and Configurable Pre-amplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Designed for low EMI
      4. 7.3.4 Device Protection Systems
        1. 7.3.4.1 Diagnostics
          1. 7.3.4.1.1 Load Diagnostics
        2. 7.3.4.2 Faults During Load Diagnostics
        3. 7.3.4.3 Protection and Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation in Shutdown Mode
      2. 7.4.2 Operation in Standby Mode
      3. 7.4.3 Operation in Active Mode
    5. 7.5 Programming
      1. 7.5.1 General I2C Operation
      2. 7.5.2 Single-Byte and Multiple-Byte Transfers
      3. 7.5.3 Single-Byte Write
      4. 7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
      5. 7.5.5 Single-Byte Read
      6. 7.5.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x01
      2. 7.6.2 Address: 0x02
      3. 7.6.3 Address: 0x03
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Ended Source
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Optional Components
          2. 8.2.1.2.2 Capacitor Selection
          3. 8.2.1.2.3 Solenoid Selection
          4. 8.2.1.2.4 Output Filter Considerations
        3. 8.2.1.3 Application Curves
        4. 8.2.1.4 Differential Input Diagram
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision C (May 2020) to Revision D (November 2023)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go

Changes from Revision B (September 2016) to Revision C (May 2020)

  • 将汽车特性 移至“特性”列表顶部Go
  • Added Junction temperature to the Absolute Maximum Ratings Go
  • Changed the ESD Ratings tableGo
  • Added INTZ Report to the Electrical Characteristics tableGo
  • Changed Figure 7-1 Go
  • Changed From: "The load diagnostic function runs on de-assertion" To: "The load diagnostic function runs on assertion" in the Load Diagnostics sectionGo
  • Added the Protection and Monitoring sectionGo
  • Changed From: "NRST pin..." To: "EN pin..." in the Operation in Shutdown Mode sectionGo
  • Chaged From: When EN is asserted (logic low) To: When EN is de-asserted (logic low) in the Operation in Shutdown Mode sectionGo
  • Deleted register 0x00 from the Register Map sectionGo
  • Changed register Address: 0x03 Go
  • Changed the Single-Ended Source section and Figure 8-1 Go
  • Changed from: BSTA and BSTB to: BSTP and BSTN in the Capacitor Selection sectionGo
  • Changed the Differential Input Diagram section and Figure 8-6 Go

Changes from Revision A (June 2016) to Revision B (September 2016)

  • 将“特性”从“符合汽车级 (Q100) 标准”更改为：“通过 AEC-Q100 2 级鉴定”Go
  • 将“特性”从“宽工作电压范围 (5V 至 18V)”更改为：“宽工作电压范围 (4.5V 至 18V)”Go
  • 添加了特性：ISO9000：已通过 2002 TS16949 认证Go
  • Changed the VDD MIN value From: 5 V to: 4.5 V in the Section 6.3 Go
  • Changed From: operates from 5 V – 18 V To: operates from 4.5 V – 18 V in the Section 9 Go

Changes from Revision * (June 2016) to Revision A (June 2016)

  • 发布为“量产数据”Go