ZHCSDL9A December   2014  – March 2015 CSD97395Q4M

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Powering CSD97395Q4M and Gate Drivers
      2. 7.3.2 Undervoltage Lockout (UVLO) Protection
      3. 7.3.3 PWM Pin
      4. 7.3.4 SKIP# Pin
        1. 7.3.4.1 Zero Crossing (ZX) Operation
      5. 7.3.5 Integrated Boost-Switch
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application Curves
    3. 8.3 System Example
      1. 8.3.1 Power Loss Curves
      2. 8.3.2 SOA Curves
      3. 8.3.3 Normalized Curves
      4. 8.3.4 Calculating Power Loss and SOA
        1. 8.3.4.1 Design Example
        2. 8.3.4.2 Calculating Power Loss
        3. 8.3.4.3 Calculating SOA Adjustments
  9. Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  10. 10器件和文档支持
    1. 10.1 商标
    2. 10.2 静电放电警告
    3. 10.3 术语表
  11. 11机械、封装和可订购信息
    1. 11.1 机械制图
    2. 11.2 建议印刷电路板 (PCB) 焊盘图案
    3. 11.3 建议模板开口

封装选项

机械数据 (封装 | 引脚)
  • DPC|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 器件和文档支持

10.1 商标

NexFET is a trademark of Texas Instruments.

Windows is a registered trademark of Microsoft Corporation.

All other trademarks are the property of their respective owners.

10.2 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损伤。

10.3 术语表

SLYZ022TI 术语表

这份术语表列出并解释术语、首字母缩略词和定义。