ZHCSG78D may   2017  – december 2018 CSD88584Q5DC

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Revision History
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings #GUID-B332ECFA-C546-412F-9E8E-6F7DE05452E3/SLPS2234239
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 6.7.1 Operating Conditions
      2. 6.7.2 Calculating Power Loss
      3. 6.7.3 Calculating SOA Adjustments
        1.       25
  8. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  9. 8Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. 9Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DMM|22
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Absolute Maximum Ratings(1)

TJ = 25°C (unless otherwise noted)
PARAMETERCONDITIONSMINMAXUNIT
VoltageVIN to PGND–0.840V
VSW to PGND–0.340
GH to SH–2020
GL to PGND–2020
Pulsed current rating, IDM(2)400A
Power dissipation, PD12W
Avalanche energy, EASHigh-side FET, ID = 103 A, L = 0.1 mH525mJ
Low-side FET, ID = 103 A, L = 0.1 mH525
Operating junction temperature, TJ–55150°C
Storage temperature, Tstg–55150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Single FET conduction, max RθJC = 1.1°C/W, pulse duration ≤ 100 μs, single pulse.