STATIC CHARACTERISTICS |
BVDSS |
Drain-to-Source Voltage |
VGS = 0 V, ID = 250 μA |
20 |
|
|
V |
IDSS |
Drain-to-Source Leakage Current |
VGS = 0 V, VDS = 16 V |
|
|
1 |
μA |
IGSS |
Gate-to-Source Leakage Current |
VDS = 0 V, VGS = 10 V |
|
|
10 |
μA |
VGS(th) |
Gate-to-Source Threshold Voltage |
VDS = VGS, ID = 250 μA |
0.6 |
0.9 |
1.2 |
V |
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 1.8 V, ID = 0.5 A |
|
65 |
99 |
mΩ |
VGS = 2.5 V, ID = 5 A |
|
33 |
39 |
mΩ |
VGS = 3.8 V, ID = 5 A |
|
25 |
29 |
mΩ |
VGS = 4.5 V, ID = 5 A |
|
23 |
27 |
mΩ |
gƒs |
Transconductance |
VDS = 2 V, ID = 5 A |
|
20 |
|
S |
DYNAMIC CHARACTERISTICS |
Ciss |
Input Capacitance |
VGS = 0 V, VDS = 10 V, ƒ = 1 MHz |
|
361 |
469 |
pF |
Coss |
Output Capacitance |
|
68 |
89 |
pF |
Crss |
Reverse Transfer Capacitance |
|
48 |
62 |
pF |
RG |
Series Gate Resistance |
|
|
7.3 |
|
Ω |
Qg |
Gate Charge Total (4.5 V) |
VDS = 10 V, ID = 5 A |
|
4.2 |
5.4 |
nC |
Qgd |
Gate Charge Gate-to-Drain |
|
1.0 |
|
nC |
Qgs |
Gate Charge Gate-to-Source |
|
1.1 |
|
nC |
Qg(th) |
Gate Charge at Vth |
|
0.5 |
|
nC |
Qoss |
Output Charge |
VDS = 10 V, VGS = 0 V |
|
1.3 |
|
nC |
td(on) |
Turn On Delay Time |
VDS = 10 V, VGS = 5 V, IDS = 5 A, RG = 0 Ω |
|
6 |
|
ns |
tr |
Rise Time |
|
26 |
|
ns |
td(off) |
Turn Off Delay Time |
|
14 |
|
ns |
tƒ |
Fall Time |
|
15 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode Forward Voltage |
ISD = 5 A, VGS = 0 V |
|
0.8 |
1.0 |
V |
Qrr |
Reverse Recovery Charge |
VDS= 10 V, IF = 5 A, di/dt = 300 A/μs |
|
7.2 |
|
nC |
trr |
Reverse Recovery Time |
|
14 |
|
ns |