ZHCSEW4B 数据表 | 德州仪器 TI.com.cn

ZHCSEW4B April 2016 – February 2022 CSD25480F3

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –16 V			–50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –12 V			–25	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = –250 μA	–0.70	–0.95	–1.20	V
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8 V, I_DS = –0.1 A		420	840	mΩ
		V_GS = –2.5 V, I_DS = –0.4 A		203	260
		V_GS = –4.5 V, I_DS = –0.4 A		132	159
		V_GS = –8 V, I_DS = –0.4 A		110	132
g_fs	Transconductance	V_DS = –10 V, I_DS = –0.4 A		8.0		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		119	155	pF
C_oss	Output capacitance			48	62	pF
C_rss	Reverse transfer capacitance			3.6	4.7	pF
R_G	Series gate resistance			16		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –10 V, I_DS = –0.4 A		0.70	0.91	nC
Q_gd	Gate charge gate-to-drain			0.10		nC
Q_gs	Gate charge gate-to-source			0.26		nC
Q_g(th)	Gate charge at V_th			0.15		nC
Q_oss	Output charge	V_DS = –10 V, V_GS = 0 V		1.3		nC
t_d(on)	Turnon delay time	V_DS = –10 V, V_GS = –4.5 V, I_DS = –0.4 A, R_G = 10 Ω		9		ns
t_r	Rise time			5		ns
t_d(off)	Turnoff delay time			13		ns
t_f	Fall time			7		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = –0.4 A, V_GS = 0 V		–0.78	–1.0	V
Q_rr	Reverse recovery charge	V_DS= –10 V, I_F = –0.4 A, di/dt = 100 A/μs		1.2		nC
t_rr	Reverse recovery time	V_DS= –10 V, I_F = –0.4 A, di/dt = 100 A/μs		6.4		ns