ZHCSC18B January   2014  – October 2014 CSD19536KCS

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械封装和可订购信息
    1. 7.1 KCS 封装尺寸

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 100 A 2.5 3.2 mΩ
VGS = 10 V, ID = 100 A 2.3 2.7 mΩ
gfs Transconductance VDS = 10 V, ID = 100 A 307 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 9250 12000 pF
Coss Output Capacitance 1820 2370 pF
Crss Reverse Transfer Capacitance 47 61 pF
RG Series Gate Resistance 1.4 2.8 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 100 A 118 153 nC
Qgd Gate Charge Gate to Drain 17 nC
Qgs Gate Charge Gate to Source 37 nC
Qg(th) Gate Charge at Vth 24 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 335 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 14 ns
tr Rise Time 8 ns
td(off) Turn Off Delay Time 38 ns
tf Fall Time 5 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 100 A,
di/dt = 300 A/μs		 548 nC
trr Reverse Recovery Time 110 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.4 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD19536KCS graph01_SLPS485.png
Figure 1. Transient Thermal Impedance
CSD19536KCS graph02_SLPS485.png
Figure 2. Saturation Characteristics
CSD19536KCS graph03_SLPS485.png
Figure 3. Transfer Characteristics
CSD19536KCS graph04_SLPS485.png
Figure 4. Gate Charge
CSD19536KCS graph06_SLPS485.png
Figure 6. Threshold Voltage vs Temperature
CSD19536KCS graph08_SLPS485.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD19536KCS graph10_SLPS485B.png
Figure 10. Maximum Safe Operating Area
CSD19536KCS graph12_SLPS485.png
Figure 12. Maximum Drain Current vs Temperature
CSD19536KCS graph05_SLPS485.png
Figure 5. Capacitance
CSD19536KCS graph07_SLPS485.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD19536KCS graph09_SLPS485.png
Figure 9. Typical Diode Forward Voltage
CSD19536KCS graph11_SLPS485.png
Figure 11. Single Pulse Unclamped Inductive Switching