ZHCSD84 数据表 | 德州仪器 TI.com.cn

ZHCSD84 January 2015 CSD19534KCS

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	100			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 80 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.4	2.8	3.4	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6 V, I_D = 30 A		16.3	20.0	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 30 A		13.7	16.5	mΩ
g_ƒs	Transconductance	V_DS = 10 V, I_D = 30 A		80		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 50 V, ƒ = 1 MHz		1290	1670	pF
C_oss	Output Capacitance			257	334	pF
C_rss	Reverse Transfer Capacitance			5.7	7.4	pF
R_G	Series Gate Resistance			1.1	2.2	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 50 V, I_D = 30 A		17.1	22.2	nC
Q_gd	Gate Charge Gate-to-Drain			3.2		nC
Q_gs	Gate Charge Gate-to-Source			5.1		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 50 V, V_GS = 0 V		44		nC
t_d(on)	Turn On Delay Time	V_DS = 50 V, V_GS = 10 V, I_DS = 30 A, R_G = 0 Ω		6		ns
t_r	Rise Time			2		ns
t_d(off)	Turn Off Delay Time			9		ns
t_ƒ	Fall Time			1		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 30 A, V_GS = 0 V		0.9	1.1	V
Q_rr	Reverse Recovery Charge	V_DS= 50 V, I_F = 30 A, di/dt = 300 A/μs		195		nC
t_rr	Reverse Recovery Time	V_DS= 50 V, I_F = 30 A, di/dt = 300 A/μs		72		ns

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance			1.3	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance			62	°C/W

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 30 A	V_DS = 50 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 30 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJC = 1.3°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching