STATIC CHARACTERISTICS |
BVDSS |
Drain-to-source voltage |
VGS = 0 V, ID = 250 μA |
100 |
|
|
V |
IDSS |
Drain-to-source leakage current |
VGS = 0 V, VDS = 80 V |
|
|
1 |
μA |
IGSS |
Gate-to-source leakage current |
VDS = 0 V, VGS = 20 V |
|
|
100 |
nA |
VGS(th) |
Gate-to-source threshold voltage |
VDS = VGS, ID = 250 μA |
2.2 |
2.7 |
3.3 |
V |
RDS(on) |
Drain-to-source on resistance |
VGS = 6 V, ID = 60 A |
|
7.3 |
8.8 |
mΩ |
VGS = 10 V, ID = 60 A |
|
6.4 |
7.7 |
gfs |
Transconductance |
VDS = 10 V, ID = 60 A |
|
137 |
|
S |
DYNAMIC CHARACTERISTICS |
Ciss |
Input capacitance |
VGS = 0 V, VDS = 50 V, ƒ = 1 MHz |
|
2980 |
3870 |
pF |
Coss |
Output capacitance |
|
560 |
728 |
pF |
Crss |
Reverse transfer capacitance |
|
13 |
17 |
pF |
RG |
Series gate resistance |
|
|
1.3 |
2.6 |
Ω |
Qg |
Gate charge total (10 V) |
VDS = 50 V, ID = 60 A |
|
38 |
49 |
nC |
Qgd |
Gate charge gate-to-drain |
|
7.5 |
|
nC |
Qgs |
Gate charge gate-to-source |
|
11.9 |
|
nC |
Qg(th) |
Gate charge at Vth |
|
7.3 |
|
nC |
Qoss |
Output charge |
VDS = 50 V, VGS = 0 V |
|
98 |
|
nC |
td(on) |
Turnon delay time |
VDS = 50 V, VGS = 10 V, IDS = 60 A, RG = 0 Ω |
|
8.4 |
|
ns |
tr |
Rise Time |
|
7.2 |
|
ns |
td(off) |
Turnoff delay time |
|
16 |
|
ns |
tf |
Fall time |
|
4.1 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode forward voltage |
ISD = 60 A, VGS = 0 V |
|
0.9 |
1 |
V |
Qrr |
Reverse recovery charge |
VDS= 50 V, IF = 60 A, di/dt = 300 A/μs |
|
270 |
|
nC |
trr |
Reverse recovery time |
|
83 |
|
ns |