ZHCSQU0C November   1998  – July 2022 CD54HC640 , CD54HCT640 , CD74HC640 , CD74HCT640

PRODUCTION DATA  

  1. 特性
  2. 说明
  3. Revision History
  4. Pin Configuration and Functions
  5. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics (2)
  6. Parameter Measurement Information
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • N|20
  • DW|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

Overview

The CDx4HC640 and CDx4HCT640 silicon-gate CMOS three-state bidirectional inverting and non-inverting buffers are intended for two-way asynchronous communication between data buses. They have high drive current outputs which enable high-speed operation when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuits, and have speeds comparable to low power Schottky TTL circuits. They can drive 15 LSTTL loads. The CDx4HC640 and CDx4HCT640 devices have inverting buffers.

The direction of data flow (A to B, B to A) is controlled by the DIR input.

Outputs are enabled by a low on the Output Enable input (OE); a high OE puts these devices in the high impedance mode.