ZHCS692C October   2010  – October 2015

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Supply Current
    6. 6.6  Power-On Reset (POR)
    7. 6.7  Wake From Sleep
    8. 6.8  RBI RAM Backup
    9. 6.9  3.3-V Regulator
    10. 6.10 2.5-V Regulator
    11. 6.11 PRES, SMBD, SMBC
    12. 6.12 CHG, DSG FET Drive
    13. 6.13 PCHG FET Drive
    14. 6.14 FUSE
    15. 6.15 Coulomb Counter
    16. 6.16 VC1, VC2, VC3, VC4
    17. 6.17 TS1, TS2
    18. 6.18 Internal Temperature Sensor
    19. 6.19 Internal Thermal Shutdown
    20. 6.20 High-Frequency Oscillator
    21. 6.21 Low-Frequency Oscillator
    22. 6.22 Internal Voltage Reference
    23. 6.23 Flash
    24. 6.24 OCD Current Protection
    25. 6.25 SCD1 Current Protection
    26. 6.26 SCD2 Current Protection
    27. 6.27 SCC Current Protection
    28. 6.28 SBS Timing Requirements
    29. 6.29 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Battery Parameter Measurements
      1. 7.1.1 Charge and Discharge Counting
      2. 7.1.2 Voltage
      3. 7.1.3 Current
      4. 7.1.4 Auto Calibration
      5. 7.1.5 Temperature
      6. 7.1.6 Communications
        1. 7.1.6.1 SMBus On and Off State
        2. 7.1.6.2 SBS Commands
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Configuration
        1. 8.1.1.1 Oscillator Function
        2. 8.1.1.2 System Present Operation
        3. 8.1.1.3 2-, 3-, or 4-Cell Configuration
        4. 8.1.1.4 Cell Balancing
          1. 8.1.1.4.1 Internal Cell Balancing
          2. 8.1.1.4.2 External Cell Balancing
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Primary (1st Level) Safety Features
      2. 8.3.2 Secondary (2nd Level) Safety Features
      3. 8.3.3 Charge Control Features
      4. 8.3.4 Gas Gauging
      5. 8.3.5 Lifetime Data Logging Features
      6. 8.3.6 Authentication
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 High-Current Path
          1. 9.2.2.1.1 Protection FETs
          2. 9.2.2.1.2 Chemical Fuse
          3. 9.2.2.1.3 Lithium-Ion Cell Connections
          4. 9.2.2.1.4 Sense Resistor
          5. 9.2.2.1.5 ESD Mitigation
        2. 9.2.2.2 Gas Gauge Circuit
          1. 9.2.2.2.1 Differential Low-Pass Filter
          2. 9.2.2.2.2 Power Supply Decoupling and RBI
          3. 9.2.2.2.3 System Present
          4. 9.2.2.2.4 SMBus Communication
          5. 9.2.2.2.5 FUSE Circuitry
          6. 9.2.2.2.6 PFIN Detection
        3. 9.2.2.3 Secondary-Current Protection
          1. 9.2.2.3.1 Cell and Battery Inputs
          2. 9.2.2.3.2 External Cell Balancing
          3. 9.2.2.3.3 PACK and FET Control
          4. 9.2.2.3.4 Regulator Output
          5. 9.2.2.3.5 Temperature Output
        4. 9.2.2.4 Secondary-Overvoltage Protection
          1. 9.2.2.4.1 Cell Inputs
          2. 9.2.2.4.2 Time-Delay Capacitor
      3. 9.2.3 Application Curves
    3. 9.3 System Example
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from B Revision (October 2013) to C Revision

  • Added ESD 额定值表,特性 描述部分,器件功能模式应用和实施部分,电源相关建议部分,布局部分,器件和文档支持部分,社区资源部分,以及机械、封装和可订购信息部分Go
  • Changed SRP, SRN absolute maximum values Go

Changes from A Revision (June 2011) to B Revision

  • Changed Electrical Characteristic for ICC ShutdownGo